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Your search keyword '"Jin, G. Y."' showing total 2 results
Start Over Author "Jin, G. Y." Topic nanowires
2 results on '"Jin, G. Y."'

1. Subthreshold Degradation of Gate-all-Around Silicon Nanowire Field-Effect Transistors: Effect of Interface Trap Charge.

Author

Hong, B. H., Cho, N., Lee, S. J., Yu, Y. S., Choi, L., Jung, Y. C., Cho, K. H., Yeo, K. H., Kim, D.-W., Jin, G. Y., Oh, K. S., Park, D., Song, S.-H., Rieh, J.-S., and Hwang, S. W.

Subjects
METAL oxide semiconductor field-effect transistors, NANOWIRES, SILICON, PHYSICS instruments, ELECTROSTATICS, QUANTITATIVE research
Abstract

We measured and analyzed the subthreshold degradation of the gate-all-around (GAA) silicon nanowire field-effect transistors with the length of 300/500 nm and the radius of 5 nm. An analytical model incorporating the effect of interface traps quantitatively explained the measured subthreshold swing (SS) degradation. A simple electrostatic argument showed that the GAA device had smaller degradation of SS values than planar devices for the same interface trap densities. [ABSTRACT FROM PUBLISHER]

Published
2011
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2. Low Temperature Characterization of PMOS-type Gate-all-around Silicon nanowire FETs as single-hole-transistors.

Author

Hong, B. H., Hwang, S. W., Lee, Y. Y., Son, M. H., Ahn, D., Cho, K. H., Yeo, K. H., Kim, D.-W., Jin, G. Y., and Park, D.

Subjects
METAL oxide semiconductors, LOW temperatures, GATE array circuits, NANOWIRES, SILICON, FIELD-effect transistors, QUANTUM tunneling, HOLES (Electron deficiencies)
Abstract

We report the single hole tunneling characteristics observed from a PMOS-type gate-all-around silicon nanowire field-effect-transistor with the radius 5 nm and the length 44 nm. The total capacitance of the quantum dot obtained from the measured Coulomb oscillations and Coulomb diamonds matches with the ideal capacitance of the silicon cylinder. It suggests that the observed single hole tunneling is originated from the fabricated structure. [ABSTRACT FROM AUTHOR]

Published
2011
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