Search

Background: Bacterial biofilms are communities of surface-associated microorganisms living in cellular clusters or micro-colonies, encapsulated in a complex matrix composed of an extracellular polymeric substance, separated by open water channels that act as a circulatory system that enable better diffusion of nutrients and easier removal of metabolic waste products. The monitoring of biofilms can provide important information on fundamental biofilm-related processes. That information can shed light on the bacterial processes and enable scientists to find ways of preventing future bacterial infections. Various approaches in use for biofilm analysis are based on microscopic, spectrochemical, electrochemical, and piezoelectrical methods. All these methods provide significant progress in understanding the bio-process related to biofilm formation and eradication, nevertheless, the development of novel approaches for the real-time monitoring of biochemical, in particular metabolic activity, of bacterial species during the formation, life and eradication of biofilms is of great potential importance., Results: Here, detection and monitoring of the metabolic activity of bacterial biofilms in high-ionic-strength solutions were enabled as a result of novel surface modification by an active redox system, composed of 9,10-dihydroxyanthracene/9,10-anthraquinone, on the oxide layer of the SiNW, yielding a chemically-gated FET array. With the use of enzymatic reactions of oxidases, metabolites can be converted to H 2 O 2 and monitored by the nanosensors. Here, the successful detection of glucose metabolites in high-ionic-strength solutions, such as bacterial media, without pre-processing of small volume samples under different conditions and treatments, has been demonstrated. The biofilms were treated with antibiotics differing in their mechanisms of action and were compared to untreated biofilms. Further examination of biofilms under antibiotic treatment with SiNW-FET devices could shed light on the bioprocess that occurs within the biofilm. Moreover, finding proper treatment that eliminates the biofilm could be examined by the novel nanosensor as a monitoring tool., Conclusions: To summarize, the combination of redox-reactive SiNW-FET devices with micro-fluidic techniques enables the performance of rapid, automated, and real-time metabolite detection with the use of minimal sample size, noninvasively and label-free. This novel platform can be used as an extremely sensitive tool for detection and establishing medical solutions for bacterial-biofilm eradication and for finding a proper treatment to eliminate biofilm contaminations. Moreover, the sensing system can be used as a research tool for further understanding of the metabolic processes that occur within the bacterial biofilm population.

Chemically modified field-effect transistor (FET) nanodevices were shown to be a selective and extremely sensitive detection platform. In FET-based sensors, signal amplification and transduction is based on electrostatic gating of the nanometric semiconductor channel by analyte-receptor interactions, which measurably affect the transconductance of the device. However, chemically modified FETs must overcome several fundamental limitations before they can be effectively deployed as real-time sensors for bioevents occurring on their surface in complex biofluids. Here, we demonstrate the development of amperoFET devices for the real-time continuous monitoring of small molecular metabolites in biofluids. The surface of the nanowires is covalently modified with a redox reversible moiety, which is easily oxidized in the presence of H 2 O 2 . The reversible redox transformation of the surface-confined molecules is carried out by a hot electron injection mechanism, conducted simply by the modulation of the source-drain current through the nanoFET sensing device. By this approach, electrons may be injected by the nanowire element into the surface-confined redox moiety and thus maintain a whole-electrically actuated redox system in which the oxidation state is completely controlled by the current applied to the amperoFET system. The modulation of the source-drain current allows the control of the reduced versus oxidized redox moieties population on the nanowire surface, and this, in turn, is applied as the main sensing mechanism. At a given constant source-drain and gate voltage, the chemical perturbation exerted by the presence of chemical oxidants in the tested biofluid will lead to a measurable conductance change. Alteration in the concentration of the specific metabolite will chemically regulate the extent of perturbation applied to the redox system, which can be utilized for the quantification of the molecular metabolite of interest. These 'equilibrium'-type sensors are fully electrically operated and can be further used in implantable sensing applications.

The dependence of electrical properties of rough and cylindrical Si nanowires (NWs) synthesized by diameter-controllable metal catalyst-assisted etching (MCE) on the size of the NW's diameter was demonstrated. Using a decal-printing and transfer process assisted by Al2O3 sacrificial layer, the Si NW field effect transistor (FET) embedded in a polyvinylphenol adhesive and dielectric layer were fabricated. As the diameter of Si NW increased, the mobility of FET increased from 80.51 to 170.95 cm(2)/V·s and the threshold voltage moved from -7.17 to 0 V because phonon-electron wave function overlaps, surface scattering, and defect scattering decreased and gate coupling increased as the ratio of surface-to-volume got reduced.

This research work uses sp3d5s* tight-binding models to design and analyze the structural properties of group IV and III-V oriented, rectangular Silicon (Si) and Gallium Arsenide (GaAs) Nanowires (NWs). The electrical characteristics of the NWs, which are shielded with Lanthanum Oxide (La2O3) material and the orientation with z [001] using the Non-Equilibrium Green Function (NEGF) method, have been analyzed. The electrical characteristics and the parameters for the multi-gate nanowires have been realized. A nanowire comprises a heavily doped n+ donor source and drains doping and n-donor doping at the channel. The specified nanowire has a gate length and channel length of 15 nm each, a source-drain device length LSD = 35 nm, with La2O3 as 1 nm (gate dielectric oxide) each on the top and bottom of the core material (Si/GaAs). The Gate-All-Around (GAA) Si NW is superior with a high (ION/IOFF ratio) of 1.06 × 109, and a low leakage current, or OFF current (IOFF), of 3.84 × 10−14 A. The measured values of the mid-channel conduction band energy (Ec) and charge carrier density (ρ) at VG = VD = 0.5 V are −0.309 eV and 6.24 × 1023 C/cm3, respectively. The nanowires with hydrostatic strain have been determined by electrostatic integrity and increased mobility, making them a leading solution for upcoming technological nodes. The transverse dimensions of the rectangular nanowires with similar energy levels are realized and comparisons between Si and GaAs NWs have been performed. [ABSTRACT FROM AUTHOR]

A primary challenge to use silicon nanowires as a truly potential building block in nanoscale devices is the implementation of scale effects into operational performance. Therefore, surface stress effects—as a direct result of size reduction—on transport properties became a major field of study. Previous computational simulations have focused so far on geometrical parameters with symmetrical cross sections, while silicon nanowires with nonsymmetrical cross sections are the major result of top-down fabrication techniques. A recent study has drawn a new aspect on the role played by the surface stress with a torsional profile on silicon nanowires to address the existing controversy from experimental and computational studies. Motivated by its success, the implications of this surface stress profile on the tensile properties of silicon nanowires are studied through molecular dynamics simulations. Deformation associated with the surface stress is computed for different length-to-thickness and width-to-thickness ratios. Then, tensile properties are investigated for a constant strain rate. Atomic calculations are carried out on silicon nanowires along the ⟨ 100 ⟩ crystal orientation for fixed-fixed and fixed-free boundary conditions. A combination of compressive uniaxial surface stress and torsional surface stress contributes to the mechanical behavior of silicon nanowires. A transition on elastic properties is obtained through changing the cross section from square to rectangular configuration. Further to addressing the controversy regarding the contribution of the surface stress on the mechanical properties, limits associated with available analytical approaches are highlighted for silicon nanowires. [ABSTRACT FROM AUTHOR]

With advances in nanotechnology, nanowires have gained worldwide attention because of their novel properties and promising applications. Among them, silicon nitride (Si 3 N 4) nanowires have attracted increasing attention due to their excellent performance and huge application potential. In this review, various synthesis methods of Si 3 N 4 nanowires are introduced in detail, and then the growth mechanisms are also stated. Subsequently, the novel properties of Si 3 N 4 nanowires including mechanical, optical, electrical, thermal, and wetting performance are highlighted. Applications corresponding to performance are also summarized later, such as composites, field emitters, field-effect transistors (FETs), photodetectors, photocatalysts, and microwave absorbers. Finally, the contents of this article are concluded and outlooks of future research directions are stated. This article reviews the recent advances and provides the prospects and challenges of Si 3 N 4 nanowires. [Display omitted] • The designed synthesis methods and growth mechanisms of Si 3 N 4 nanowires were summarized. • The novel properties of Si 3 N 4 nanowires were highlighted. • The potential applications of Si 3 N 4 nanowires were indicated. • The challenges and opportunities of Si 3 N 4 nanowires were proposed. [ABSTRACT FROM AUTHOR]

In the present era of the Internet of Things, wearable sensors have been receiving considerable attention owing to their great potential in a plethora of applications. Highly sensitive chemical type wearable sensors that can conformably adhere to the epidermis or textiles for monitoring personal microenvironment have gained incredible interest. Attributable to the large surface area and excellent mechanical, chemical, physical, thermal as well as biocompatible properties, nanomaterials have become a prominent building block to develop wearable sensors. In this review, recent progress in the development of nanomaterial enabled wearable chemical environmental sensors (WCESs) is presented by focusing on the chemistry‐based transduction principles. The developments in sensor structures, selection of materials, and fabrication methods are highlighted. The recent WCESs are summarized by grouping in three major types according to their transduction principles: electrical, photochemical, and electrochemical. In addition, sensors with multimodal sensing capability as well as sensors immobilized in wireless tags are summarized. Finally, issues, challenges, and future perspectives are discussed to develop next‐generation WCESs with long life, biocompatibility, self‐healing, and real‐time communication capabilities. [ABSTRACT FROM AUTHOR]

Nanomaterials are expected to play an important role in the development of sustainable products. The use of nanomaterials in solar cells has the potential to increase their conversion efficiency. In this study, we performed a life cycle assessment (LCA) for an emerging nanowire‐based solar technology. Two lab‐scale manufacturing routes for the production of nanowire‐based solar cells have been compared—the direct growth of GaInP nanowires on silicon substrate and the growth of InP nanowires on native substrate, peel off, and transfer to silicon substrate. The analysis revealed critical raw materials and processes of the current lab‐scale manufacturing routes such as the use of trifluoromethane (CHF3), gold, and an InP wafer and a stamp, which are used and discarded. The environmental performance of the two production routes under different scenarios has been assessed. The scenarios include the use of an alternative process to reduce the gold requirements—electroplating instead of metallization, recovery of gold, and reuse of the InP wafer and the stamp. A number of suggestions, based on the LCA results—including minimization of the use of gold and further exploration for upscaling of the electroplating process, the increase in the lifetimes of the wafer and the stamp, and the use of fluorine‐free etching materials—have been communicated to the researchers in order to improve the environmental performance of the technology. Finally, the usefulness and limitations of lab‐scale LCA as a tool to guide the sustainable development of emerging technologies are discussed. [ABSTRACT FROM AUTHOR]

Silicon is the undisputed leader for microelectronics among all the industrial materials and Si nanostructures flourish as natural candidates for tomorrow’s technologies due to the rising of novel physical properties at the nanoscale. In particular, silicon nanowires (Si NWs) are emerging as a promising resource in different fields such as electronics, photovoltaic, photonics, and sensing. Despite the plethora of techniques available for the synthesis of Si NWs, metal-assisted chemical etching (MACE) is today a cutting-edge technology for cost-effective Si nanomaterial fabrication already adopted in several research labs. During these years, MACE demonstrates interesting results for Si NW fabrication outstanding other methods. A critical study of all the main MACE routes for Si NWs is here presented, providing the comparison among all the advantages and drawbacks for different MACE approaches. All these fabrication techniques are investigated in terms of equipment, cost, complexity of the process, repeatability, also analyzing the possibility of a commercial transfer of these technologies for microelectronics, and which one may be preferred as industrial approach.

Semiconductor nanowires are increasingly used in optoelectronic devices. However, their effects on human health have not been assessed fully. Here, we investigate the effects of gallium phosphide nanowires on human lung adenocarcinoma cells. Four different geometries of nanowires were suspended in the cell culture for 48 hours. We show that cells internalize the nanowires and that the nanowires have no effect on cell proliferation rate, motility, viability and intracellular ROS levels. By blocking specific internalization pathways, we demonstrate that the nanowire uptake is the result of a combination of processes, requiring dynamin and actin polymerization, which suggests an internalization through macropinocytosis and phagocytosis. [ABSTRACT FROM AUTHOR]

New technologies may create benefits, but can also sometimes introduce or exacerbate societal problems. There is broad consensus that adequate and targeted innovation is a key factor for achieving more sustainable development [1]. It is essential to understand that the meaning of "adequate" cannot be understood using only technical parameters. The real impact of emerging technologies is always a byproduct of both the technical parameters of technology and their social "embodiment," embodiment being the social environment of technology including its social consequences, application patterns, side effects, etc. Examination of the societal implications of technology should be developed further and conclusions formed in a way that positive consequences can be realized for sustainable development and negative effects prevented or minimized. [ABSTRACT FROM PUBLISHER]

With their attractive intrinsic properties, such as morphology, autoassembling properties, and tailorability, nano-objects could provide alternative and innovative routes to current microelectronics and nanoelectronics. Further insight on their electrical properties, especially in terms of statistics and reproducibility, as well as on their potential integration into silicon-based electronics is, however, often required to be able to fully exploit their potential. This paper proposes an innovative approach using a generic structure allowing the study of nano-objects electrical properties. Regarding the nano-objects integration, a homogeneous approach is presented with the in situ fabrication of atomic wires as a possible planar interconnection system. A heterogeneous approach is described as well with the characterization and preliminary integration of biological material, such as deoxyribonucleic acid-based nanowires or amyloid fibers. [ABSTRACT FROM PUBLISHER]