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Based on X-ray diffraction analysis, Auger spectroscopy, and Raman scattering, it is shown that carbonization of porous silicon at temperatures of 1200–1300°C results in formation of silicon carbide nanocrystals 5–7 nm in size. The growth of 3C-SiC nanocrystals of fixed size d proceeds as follows. Silicon nanocrystals with d = 3–7 nm pass into the liquid phase, thereby effectively participating in the growth of silicon carbide. After the size of a crystallite has achieved a critical value determined by the equality of its melting point and environmental temperature, the crystallite solidifies and virtually ceases to grow. As a result, a nanocrystalline Si-SiC-amorphous SiC heterostructure is obtained. [ABSTRACT FROM AUTHOR]

The Raman and photoluminescence (PL) spectra of nanocrystalline zinc oxide produced by mechanochemical synthesis were measured using a pulsed nitrogen laser (337.1 nm) and xenon lamp (360 nm) as excitation sources in PL measurements and a cw Nd:YAG laser in Raman measurements. PL was observed in the range 400–800 nm. The Raman spectrum of nanocrystalline (90 nm) ZnO was compared to that of coarsegrained ZnO. The Raman bands of nanocrystalline zinc oxide were found to be shifted to lower frequencies and broadened. Laser radiation was shown to cause local heating of zinc oxide up to 1000 K, resulting in photoinduced formation of zinc nanoclusters. Mixtures of zinc oxide and sodium chloride powders are heated to substantially lower temperatures. Under nitrogen laser excitation, the green PL band (535 nm), characteristic of bulk ZnO, is shifted to longer wavelengths by 85 nm. The results are interpreted in terms of light confinement in zinc oxide microclusters consisting of large number of nanocrystallites. The photoinduced processes in question may be a viable approach to producing metal-insulator structures in globular photonic crystals, opals, filled with zinc oxide. [ABSTRACT FROM AUTHOR]