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TNO is developing a High Power Adaptive Mirror (HPAM) to be used in the CO2 laser beam path of an Extreme Ultra-Violet (EUV) light source for next-generation lithography. In this paper we report on a developed methodology, and the necessary simulation tools, to assess the performance and associated sensitivities of this deformable mirror. Our analyses show that, given the current limited insight concerning the process window of EUV generation, the HPAM module should have an actuator pitch of ≥ 4 mm. Furthermore we have modelled the sensitivity of performance with respect to dimpling and actuator noise. For example, for a deformable mirror with an actuator pitch of 4 mm, and if the associated performance impact is to be limited to smaller than 5%, the actuator noise should be smaller than 45 nm (rms). Our tools assist in the detailed design process by assessing the performance impact of various design choices, including for example those that affect the shape and spectral content of the influence function.

We have developed a high speed, miniature scanning probe microscope (MSPM) integrated with a Positioning Unit (PU) for accurately positioning the MSPM on a large substrate. This combination enables simultaneous, parallel operation of many units on a large sample for high throughput measurements. The size of the MSPM is 19 × 45 × 70 mm3. It contains a one-dimensional flexure stage with counter-balanced actuation for vertical scanning with a bandwidth of 50 kHz and a z-travel range of more than 2 μm. This stage is mechanically decoupled from the rest of the MSPM by suspending it on specific dynamically determined points. The motion of the probe, which is mounted on top of the flexure stage is measured by a very compact optical beam deflection (OBD). Thermal noise spectrum measurements of short cantilevers show a bandwidth of 2 MHz and a noise of less than 15 fm/Hz1/2. A fast approach and engagement of the probe to the substrate surface have been achieved by integrating a small stepper actuator and direct monitoring of the cantilever response to the approaching surface. The PU has the same width as the MSPM, 45 mm and can position the MSPM to a pre-chosen position within an area of 275×30 mm2 to within 100 nm accuracy within a few seconds. During scanning, the MSPM is detached from the PU which is essential to eliminate mechanical vibration and drift from the relatively low-resonance frequency and low-stiffness structure of the PU. Although the specific implementation of the MSPM we describe here has been developed as an atomic force microscope, the general architecture is applicable to any form of SPM. This high speed MSPM is now being used in a parallel SPM architecture for inspection and metrology of large samples such as semiconductor wafers and masks.