1. Avalanche Gain Modeling Revisited in HgCdTe APDs.
- Author
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Rothman, Johan, Abergel, Julie, Coquiard, Antoine, Gout, Sylvain, Lonjon, Maxime, Montel, Anaëlle, Lechevallier, Loïc, Ferron, Alexandre, Mavel, Amaury, Bustillos-Vasco, Samantha, Renet, Sebastien, Berger, Frederic, Vandeneynde, Aurelie, and Brunet-Manquat, Sandy
- Subjects
AVALANCHE photodiodes ,IMPACT ionization ,BAND gaps ,MODELS & modelmaking ,MULTIPLICATION - Abstract
The gain in short-wave infrared and mid-wave infrared HgCdTe avalanche photodiodes (APDs) with large diameters has been analyzed using an already established model based on an empirical expression proposed by Okuto–Crowell (OC) and a new model derived for the impact ionization in HgCdTe. This model is based on a simplified but physical description of the carrier dynamics during the multiplication. It is shown that OC model has limitations in giving a precise description of the measured avalanche gains, and that is difficult, in view of present available data, to derive a universal expression for the model parameters to predict the avalanche gain in HgCdTe APDs as a function of the Cd composition, operating temperature, and multiplication layer geometry. The new model is shown to give a better fit of the gain data, associated with a scaling of the model parameters with the band gap. [ABSTRACT FROM AUTHOR]
- Published
- 2024
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