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In this paper, the Oxide-Trap based on Charge-Pumping (OTCP) extraction method is extended from high frequencies (HFs) to low frequencies (LFs). As a consequence, the LF-OTCP method simultaneously senses both interface-trap and border-trap (switching oxide-trap) in charge-pumping (CP) current (Icp) measurements. We have found that radiation-induced oxide-trap (ΔNot) is dependent on ΔVth (threshold voltage shift), ΔIcpm,h (augmentation of maximum CP current at high frequencies), and ΔIcpm,l (augmentation of maximum CP current at low frequencies), where ΔIcpm,l is caused by radiation-induced interface-trap increase (ΔNit) and ΔIcpm,t by both radiation-induced interface and border-trap increases (ΔNit) and (ΔNbt), respectively. We have shown that ΔIcpm,l and ΔIcpm,h can be easily obtained from a vertical shift of the charge-pumping curve at low and high frequencies respectively, and ΔVth from a lateral one. [ABSTRACT FROM AUTHOR]

In this paper, we propose a new extraction method of radiation-induced oxide-trap density (ΔNot), called Oxide-Trap based on Charge-Pumping (OTCP). This part presents the HF-OTCP method, which relies on high-frequency (HF) standard charge-pumping measurement. By applying an HF gate voltage signal, we avoid the border-trap effect in CP current (Icp) measurements. Hence, Icp will be only due to the interface-trap contribution. We establish, using the HF-OTCP method, that ΔNot is only dependent on ΔVth (threshold voltage shift) and ΔIcpm (increase of maximum CP current), where δIcpm is caused by radiation-induced interface-trap increase (ΔNit ). We also clearly show that ΔVth and ΔIcpm can be obtained from lateral and vertical shifts of Elliot's charge-pumping curves, respectively. Thus, this new procedure allows the determination of ΔNot without needing any additional techniques. Finally, this procedure can be used in rapid hardness assurance test to evaluate both radiation-induced oxide and interface traps. [ABSTRACT FROM AUTHOR]