Anjum, Arshiya, Pradeep, T. M., Vinayakprasanna, N. H., Pushpa, N., Tripathi, Ambuj, and Gnana Prakash, A. P.
N-channel depletion MOSFETs were irradiated with 80 MeV Carbon (C6+) and 80 MeV Nitrogen (N6+) ions in the dose range from 100 krad (Si) to 30 Mrad (Si). The electrical characteristics of MOSFET such as threshold voltage (Vth), density of interface trapped charges (${{\Delta }}\text{N}_{\mathrm{ it}}$), density of oxide trapped charges (${{\Delta }}\text{N}_{\mathrm{ ot}}$), transconductance (gm), mobility (${{\mu }}$), leakage current (IL) and drain saturation current (IDSat) were studied as a function of dose. A considerable increase in ${{\Delta }}\text{N}_{\mathrm{ it}}$ and ${{\Delta }}\text{N}_{ot}$ and decrease in $\text{V}_{\mathrm{ th,}}\text{g}_{\mathrm{ m}}$ , ${{\mu }}$ , and $\text{I}_{\mathrm{ D~Sat}}$ was observed after irradiation. The ${{\mu }}$ was correlated with ${{\Delta }}\text{N}_{\mathrm{ it}}$ and it is found that the contribution of ${{\Delta }}\text{N}_{\mathrm{ ot}}$ in degrading the mobility of charge carriers is negligible.The ion irradiated results were compared with Co-60 gamma irradiated results and found that the degradation is more for Co-60 gamma irradiated devices at lower doses, whereas at higher doses, the degradation is more for heavy ion irradiated devices. [ABSTRACT FROM AUTHOR]