Search

Methylammonium lead bromide (MAPbBr3) single crystal thin film shows great opportunities in high‐performance optoelectronic devices due to its high absorption coefficient, high photoelectric conversion efficiency, and low trap‐state density properties. In order to fabricate a highly sensitive self‐powered photodetectors, herein, a MAPbBr3 single crystal thin film/molybdenum disulfide (MoS2) vertical p‐n heterostructure based photodetector has been built by typical polymer film assisted dry transfer method and micromachining technique. Attributing to the built‐in electric field and the shortened transmit distance for the photogenerated carriers in this heterostructure, the device shows excellent photovoltaic characteristics with a maximum output electrical power of 7 nW and power conversion efficiency of 8% at 0.34 V under 532 nm laser. Moreover, prominent photoelectric properties with responsivity of 368 mA W−1 and detectivity of 3.74 × 1012 Jones for 532 nm laser without any bias have been achieved, which are ranking high among the organic–inorganic hybrid perovskites based self‐power photodetectors. These results demonstrate that the MAPbBr3 single crystal thin film/MoS2 vertical heterostructure can pave a new way to develop high‐performance photovoltaic devices. [ABSTRACT FROM AUTHOR]

A High-Performance Self-Powered Photodetector Based on MAPbBr3 Single Crystal Thin Film/MoS2 Vertical Van Der Waals Heterostructure (Adv. MoS 2, perovskite vertical heterostructures, photodetectors, p-n junctions, single crystal thin films Keywords: MoS 2; perovskite vertical heterostructures; photodetectors; p-n junctions; single crystal thin films EN MoS 2 perovskite vertical heterostructures photodetectors p-n junctions single crystal thin films 1 1 1 09/27/22 20220922 NES 220922 B Single Crystal MAPbBr SB 3 sb /MoS SB 2 sb Vertical vdW Device b A strategy on combining single crystal perovskite with 2D materials into a vertical van der Waals (vdW) for high-performance self-powered photodetector fabrication is proposed by Zhongquan Xu, Jing Xiao, Zhinan Guo, and co-workers in article number 2200912. [Extracted from the article]