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Your search keyword '"Dilute nitride semiconductor"' showing total 3 results
Start Over Descriptor "Dilute nitride semiconductor" Topic molecular beam epitaxy
3 results on '"Dilute nitride semiconductor"'

1. Sb and N Incorporation Interplay in GaAsSbN/GaAs Epilayers near Lattice-Matching Condition for 1.0-1.16-eV Photonic Applications.

Author

Braza, V., Reyes, D., Gonzalo, A., Utrilla, A., Ben, T., Ulloa, J., and González, D.

Subjects
SOLAR cells, DILUTE alloys, PHOTODETECTORS, MOLECULAR beam epitaxy, X-ray diffraction
Abstract

As promising candidates for solar cell and photodetection applications in the range 1.0-1.16 eV, the growth of dilute nitride GaAsSbN alloys lattice matched to GaAs is studied. With this aim, we have taken advantage of the temperature gradient in the molecular beam epitaxy reactor to analyse the impact of temperature on the incorporation of Sb and N species according to the wafer radial composition gradients. The results from the combination of X-ray diffraction (XRD) and energy-dispersive X-ray spectroscopies (EDS) show an opposite rate of incorporation between N and Sb as we move away from the centre of the wafer. A competitive behaviour between Sb and N in order to occupy the group-V position is observed that depends on the growth rate and the substrate temperature. The optical properties obtained by photoluminescence are discussed in the frame of the double-band anticrossing model. The growth conditions define two sets of different parameters for the energy level and the coupling interaction potential of N, which must be taken into account in the search for the optimum compositions 1-1.15-eV photonic applications. [ABSTRACT FROM AUTHOR]

Published
2017
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2. Study on the device structure of GaInNAs(Sb) based solar cells for use in 4-junction tandem solar cells.

Author

Miyashita, Naoya, Ahsan, Nazmul, Islam, Muhammad Monirul, and Okada, Yoshitaka

Abstract

We have evaluated n-GaAs/i-GaInNAsSb/p-GaAs (nip) and p-GaAs/i-GaInNAsSb/n-GaAs (pin) solar cells grown by RF-molecular beam epitaxy. The absorption edges of these samples were at around 1180 nm. The currents generated in GaInNAs(Sb) layers, which were calculated from AM 1.5 spectrum and QE spectra at λ > 870 nm region, were 4.6 (nip) and 5.1 (pin) mA/cm2, respectively. Illuminated current voltage curves show that the open circuit voltages (Voc) and FF values were 0.42 V and 0.71, respectively, for both structures. From these measurements, since almost the same PV properties are achieved for both samples, we found no distinct disadvantage to adopt nip structure substituted for pin GaInNAsSb solar cell, although there seems to be some difficulties in carrier collection near by the deep i-GaInNAsSb/p-GaAs interface in nip sample. We observed an enhancement in the filtered current density when GaInNAsSb absorber thickness is increased in nip structure without any degradation of other photovoltaic parameters. In order to further improve filtered current density, increase of GaInNAs(Sb) absorber thickness is necessary. [ABSTRACT FROM PUBLISHER]

Published
2012
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3. Sb and N Incorporation Interplay in GaAsSbN/GaAs Epilayers near Lattice-Matching Condition for 1.0–1.16-eV Photonic Applications

Author

Teresa Ben, D.F. Reyes, V. Braza, JM José Maria Ulloa, A. Gonzalo, David González, and A. D. Utrilla

Subjects
Diffraction, Materials science, Photoluminescence, Nanotechnology, 81.05.Ea (III-V semiconductors), 02 engineering and technology, Photodetection, Nitride, 7. Clean energy, 01 natural sciences, Molecular physics, law.invention, Structural and optical characterization, law, Dilute nitride semiconductor, 0103 physical sciences, Solar cell, lcsh:TA401-492, General Materials Science, Wafer, 68.55.Nq composition and phase identification, 010302 applied physics, Nano Express, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 81.15.Hi (molecular beam epitaxy), Temperature gradient, GaAsSbN, lcsh:Materials of engineering and construction. Mechanics of materials, 0210 nano-technology, 71.20.Nr Semiconductor compounds, Molecular beam epitaxy
Abstract

As promising candidates for solar cell and photodetection applications in the range 1.0–1.16 eV, the growth of dilute nitride GaAsSbN alloys lattice matched to GaAs is studied. With this aim, we have taken advantage of the temperature gradient in the molecular beam epitaxy reactor to analyse the impact of temperature on the incorporation of Sb and N species according to the wafer radial composition gradients. The results from the combination of X-ray diffraction (XRD) and energy-dispersive X-ray spectroscopies (EDS) show an opposite rate of incorporation between N and Sb as we move away from the centre of the wafer. A competitive behaviour between Sb and N in order to occupy the group-V position is observed that depends on the growth rate and the substrate temperature. The optical properties obtained by photoluminescence are discussed in the frame of the double-band anticrossing model. The growth conditions define two sets of different parameters for the energy level and the coupling interaction potential of N, which must be taken into account in the search for the optimum compositions 1–1.15-eV photonic applications.

Published
2017

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