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We present a study of Ge segregation at the surface of highly germanium-doped gallium oxide (2.5 × 1020 cm−3 nominal doping level) grown by molecular beam epitaxy. We probed the dopant concentration as a function of depth by hard x-ray photoelectron spectroscopy and standard laboratory photoemission spectroscopy. We notably found that there is germanium segregation within the top 2 nm where its concentration is 3 times the nominal doping level. This increased dopant concentration leads to a threefold enhancement of surface conductivity. The results suggest a reliable method for delta doping for power electronics applications. [ABSTRACT FROM AUTHOR]

We demonstrate field emission characteristics of β-Ga2O3 nano-pillar arrays fabricated using a damage-free etching technique. The technique utilizes Ga flux in an ultra-high vacuum environment (molecular beam epitaxy) to form high aspect ratio Ga2O3 nano-pillars with atomic-scale etching precision. Electrically conductive Ga2O3 nano-pillars with uniform widths of ∼200–300 nm were realized without the use of e-beam lithography. Furthermore, field emission characteristics on the nano-pillars displayed an emission current of 19 nA per tip at an electric field of 385 kV/cm. The field emission characteristics were modeled using the Murphy–Good model, and the measurements were validated with a field emission orthodoxy test. [ABSTRACT FROM AUTHOR]

We report that graphene grown by molecular beam epitaxy from solid carbon (CMBE) on (0001) SiC in the presence of unintentional oxygen exhibits a small bandgap on the order of tens of meV. The presence of bandgaps is confirmed by temperature dependent Hall effect and resistivity measurements. X-ray photoelectron spectroscopy (XPS) measurements suggest that oxygen incorporates into the SiC substrate in the form of O-Si-C and not into the graphene as graphene oxide or some other species. The effect is independent of the carrier type of the graphene. Temperature dependent transport measurements show the presence of hopping conduction in the resistivity and a concurrent disappearance of the Hall voltage. Interactions between the graphene layers and the oxidized substrate are believed to be responsible for the bandgap. [ABSTRACT FROM AUTHOR]

Heterostructures consisting of two-dimensional materials have shown new physical phenomena, novel electronic and optical properties, and new device concepts not observed in bulk material systems or purely three dimensional heterostructures. These new effects originated mostly from the van der Waals interaction between the different layers. Here we report that a new optical and electronic device platform can be provided by heterostructures of 2D graphene with a metal oxide (TiO2). Our novel direct synthesis of graphene/TiO2 heterostructure is achieved by C60 deposition on transition Ti metal surface using a molecular beam epitaxy approach and O2 intercalation method, which is compatible with wafer scale growth of heterostructures. As-grown heterostructures exhibit inherent photosensitivity in the visible light spectrum with high photo responsivity. The photo sensitivity is 25 times higher than that of reported graphene photo detectors. The improved responsivity is attributed to optical transitions between O 2p orbitals in the valence band of TiO2 and C 2p orbitals in the conduction band of graphene enabled by Coulomb interactions at the interface. In addition, this heterostructure provides a platform for realization of bottom gated graphene field effect devices with graphene and TiO2 playing the roles of channel and gate dielectric layers, respectively. [ABSTRACT FROM AUTHOR]

The article presents the publisher's note about the effect of in-situ oxygen on electronic properties of graphene grown by carbon molecular beam epitaxy.