Search

Ferromagnetic resonance (FMR) study of magnetic anisotropy is presented for thin layers of IV-VI diluted magnetic semiconductor Ge1-xMnxTe with x=0.14 grown by molecular beam epitaxy on KCl (001) substrate with a thin PbTe buffer. Analysis of the angular dependence of the FMR resonant field reveals that an easy magnetization axis is located near to the normal to the layer plane and is controlled by two crystal distortions present in these rhombohedral Ge1-xMnxTe layers: the ferroelectric distortion with the relative shift of cation and anion sub-lattices along the [111] crystal direction and the biaxial in-plane, compressive strain due to thermal mismatch. [ABSTRACT FROM AUTHOR]

(Hg,Cd)Te epilayers containing a dozen percent of CdTe were grown by molecular beam epitaxy technique on GaAs wafers with thick CdTe buffer layers. The X-ray diffraction method was used to determine a chemical composition of the epilayers. The scanning electron microscopy measurements in turn were performed to determine the thickness of epilayers, and both scanning electron and atomic force microscopy to evaluate structures' morphology. The selected mechanical properties of samples were studied by the nanoindentation technique. The average values and standard deviations of the nanohardness and Young's modulus were extracted from the collected loaddisplacement data. The values of both parameters were compared with those determined for bulk crystals and those known from the literature. [ABSTRACT FROM AUTHOR]

Results of characterization of AlGaN/GaN high electron mobility transistor (HEMT) structures grown by plasma-assisted molecular beam epitaxy (PAMBE) are reported. High resolution X-ray diffraction (HRXRD) and X-ray reflectivity (XRR) were applied to show that structural properties of the AlGaN/GaN layers strongly depend on the substrate used for growth. It has been found that an additional 10 μm thick HVPE GaN layer grown on a commercial GaN/sapphire substrate significantly improves structural quality of AlGaN layer. However, the best structural parameters have been obtained for the HEMT sample grown on free-standing HVPE bulk GaN substrate. [ABSTRACT FROM AUTHOR]

ZnTe nanowires with an average diameter of about 30 nm and lengths above 1 μm were grown on GaAs(100) substrate by molecular beam epitaxy. The growth process was based on the Au-catalyzed vapor-liquid-solid mechanism. A thin gold layer (3–20 Å thick) annealed in high vacuum prior to the nanowire growth was used as a source of catalytic nanoparticles. The nanowires are inclined about 55° to the (100) substrate surface normal. They have a zinc-blende crystal structure and their growth axis is <111>. [ABSTRACT FROM AUTHOR]

Abstract: MBE growth conditions, SEM and XRD structural characterization and experimental studies of optical properties are presented for Pb1−x Eu x Te/CdTe semiconductor heterostructures grown on GaAs (001) substrate with a thick CdTe buffer layer. Photoluminescence excited by pulsed YAG:Nd laser was studied in the mid-infrared spectral region for 12.5nm-thick Pb1−x Eu x Te quantum wells (x=0–0.038) with 75nm-thick CdTe barriers. Increasing the Eu content up to about 4at% permitted large infrared photoluminescence tuning from 0.34 to 0.465eV due to the increase in Pb1−x Eu x Te bandgap. [Copyright &y& Elsevier]