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Your search keyword '"Resan, Bojan"' showing total 5 results
Start Over Author "Resan, Bojan" Topic mode-locked lasers
5 results on '"Resan, Bojan"'

1. A 265W and 782 fs amplified radially polarized beam emitted by a thin-disk multipass amplifier (Post-deadline Oral)

Author

Loescher, André, Negel, Jan-Philipp, Graf, Thomas, Pallmann, Wolfgang, Resan, Bojan, Martial, Igor, Didierjean, Julien, Lesparre, Fabien, Gomes, Jean-Thomas, Delen, Xavier, Druon, Frédéric, Balembois, François, Georges, Patrick, Abdou, Marwan, Institut für Strahwerkzeuge (IFSW), Stuttgart University, Ultrafast Lasers AG (JDSU), Fibercryst, Laboratoire Charles Fabry / Lasers, Laboratoire Charles Fabry (LCF), and Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut d'Optique Graduate School (IOGS)-Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut d'Optique Graduate School (IOGS)

Subjects
[PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Lasers, Laser Amplifiers, ytterbium, Astrophysics::Earth and Planetary Astrophysics, Mode-locked lasers, solid-state, Ultrafast lasers
Abstract

International audience; The amplification of a high-power radially polarized beam in a thin-disk multipass amplifier is presented. Up to 265W output power at a pulse duration of 782 fs and a high degree of radial polarization is achieved.

Published
2015

2. Frequency Noise Characterization of a 25-GHz Diode-Pumped Mode-Locked Laser With Indirect Carrier-Envelope Offset Noise Assessment.

Author

Brochard, Pierre, Wittwer, Valentin Johannes, Bilicki, Sławomir, Resan, Bojan, Weingarten, Kurt John, Schilt, Stéphane, and Südmeyer, Thomas

Abstract

We present a detailed frequency noise characterization of an ultrafast diodepumped solid-state laser operating at 25-GHz repetition rate. The laser is based on the gain material Er:Yb:glass and operates at a wavelength of 1.55 μm. Using a beating measurement with an ultralow-noise continuous-wave laser in combination with a dedicated electrical scheme, we measured the frequency noise properties of an optical mode of the 25-GHz laser, of its repetition rate and indirectly of its carrier-envelope offset (CEO) signal without detecting the CEO frequency by the standard approach of nonlinear interferometry. We observed a strong anticorrelation between the frequency noise of the indirect CEO signal and of the repetition rate in our laser, leading to optical modes with a linewidth below 300 kHz in the free-running laser (at 100-ms integration time), much narrower than the individual contributions of the carrier envelope offset and repetition rate. We explain this behavior by the presence of a fixed point located close to the optical carrier in the laser spectrum for the dominant noise source. [ABSTRACT FROM AUTHOR]

Published
2018
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3. Frequency Noise Characterization of a 25-GHz Diode-Pumped Mode-Locked Laser With Indirect Carrier-Envelope Offset Noise Assessment.

Author

Brochard, Pierre, Wittwer, Valentin Johannes, Bilicki, Sławomir, Resan, Bojan, Weingarten, Kurt John, Schilt, St´phane, and S¨dmeyer, Thomas

Abstract

We present a detailed frequency noise characterization of an ultrafast diodepumped solid-state laser operating at 25-GHz repetition rate. The laser is based on the gain material Er:Yb:glass and operates at a wavelength of 1.55 μm. Using a beating measurement with an ultralow-noise continuous-wave laser in combination with a dedicated electrical scheme, we measured the frequency noise properties of an optical mode of the 25-GHz laser, of its repetition rate and indirectly of its carrier-envelope offset (CEO) signal without detecting the CEO frequency by the standard approach of nonlinear interferometry. We observed a strong anticorrelation between the frequency noise of the indirect CEO signal and of the repetition rate in our laser, leading to optical modes with a linewidth below 300 kHz in the free-running laser (at 100-ms integration time), much narrower than the individual contributions of the carrier envelope offset and repetition rate. We explain this behavior by the presence of a fixed point located close to the optical carrier in the laser spectrum for the dominant noise source. [ABSTRACT FROM AUTHOR]

Published
2017
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4. Dispersion-Managed Breathing-Mode Semiconductor Mode-Locked Ring Laser: Experimental Characterization and Numerical Simulations.

Author

Resan, Bojan and Delfyett, Peter J.

Subjects
*SEMICONDUCTOR industry, *LASERS, *OPTOELECTRONIC devices, *DIGITAL communications, *ELECTRONIC pulse techniques, *LIGHT sources, *ELECTRIC conductivity
Abstract

A dispersion-managed breathing-mode mode-locked semiconductor ring laser is studied. The working regime and pulse evolution at the key cavity points are experimentally characterized and numerically simulated. Linearly chirped, asymmetric exponential pulses are generated and externally compressed to 274 fs, which is within 10% of the bandwidth limit. The close agreement between the simulated and the measured results verifies our ability to control the physical mechanisms involved in pulse formation and shaping within the ring cavity. [ABSTRACT FROM AUTHOR]

Published
2004
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5. Dispersion-managed Breathing-mode Semiconductor Mode-locked Ring Laser

Author

Resan, Bojan

Subjects
optics, lasers, mode-locked lasers, semiconductor lasers, ultrafast pulse generation, ultrafast technology, high power lasers, laser physics, Electromagnetics and Photonics, Optics
Abstract

A novel dispersion-managed breathing-mode semiconductor mode-locked ring laser is developed. The "breathing-mode" designation derives from the fact that intracavity pulses are alternately stretched and compressed as they circulate around the ring resonator. The pulses are stretched before entering the semiconductor gain medium to minimize the detrimental strong integrating self-phase modulation and to enable efficient pulse amplification. Subsequently compressed pulses facilitate bleaching the semiconductor saturable absorber. The intracavity pulse compression ratio is higher than 50. Down chirping when compared to up chirping allows broader mode-locked spectra and shorter pulse generation owing to temporal and spectral semiconductor gain dynamics. Pulses as short as 185 fs, with a peak power of ~230 w, and a focused intensity of ~4.6 gw/cm2 are generated by linear down chirp compensation and characterized by shg-frog method. To our knowledge, this is the highest peak power and the shortest pulse generation from an electrically pumped all-semiconductor system. The very good agreement between the simulated and the measured results verifies our understanding and ability to control the physical mechanisms involved in the pulse shaping within the ring cavity. Application trends such as continuum generation via a photonic crystal fiber, two-photon fluorescence imaging, and ultrafast pulse source for pump-probe experiments are demonstrated.

Published
2004

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