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This letter reports on two power amplifier (PA) monolithic microwave-integrated circuits operating at W-band. The PAs use 250 nm InP HBTs and thin-film microstrip topology formed with benzocyclobutene dielectric. First PA utilizes a two-emitter finger HBT unit cell with each finger having emitter area of 0.25 \times 6~\mu \textm^2 . Second PA power combines two HBT unit cells. Both amplifiers are single stage and utilize conjugate matching at the input and optimum power load matching at the output. The first amplifier has demonstrated saturated output power of 12.4 dBm and power-added efficiency (PAE) of 41.7% at 93 GHz. This is the highest PAE number demonstrated at W-band. Second amplifier has demonstrated saturated output power of 15.6 dBm and PAE of 21.1% at 89 GHz. [ABSTRACT FROM PUBLISHER]

This paper reports on the first demonstration of a micro-integrated pixel operating in the sub-millimeter-wave regime. The pixel consists of a low-noise amplifier realized in InP HEMT, an nIN diode detector, and micromachined horn antenna. The monolithic microwave integrated circuits are attached inside a micromachined silicon waveguide through a novel solder ball process, and a micromachined horn antenna caps the waveguide, which completes the pixel. The form factor is > \2500 \times reduction from traditional waveguide block packaging. This size reduction, high level of integration, and integration with a horn antenna enables this technology to be scalable to compact 2-D arrays in the sub-millimeter-wave regime. The pixel noise temperature is measured to be \sim \ 5400 K, which corresponds to sensitivity of an ideal total-power radiometer (\Delta T{{{ M}}}) of \sim \ 0.21 K given a 30-ms integration time and bandwidth of 20 GHz. [ABSTRACT FROM PUBLISHER]