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Electrical properties of ferroelectric thin films depend on the quality of not only the ferroelectric thin layer but also the ferroelectric/electrode interfaces. In the present study, attempts were made to minimize the Pb depletion at the bottom electrode/ferroelectric interface in lead zirconate titanate ferroelectric thin films by adding a PbO interfacial layer using a chemical solution deposition method. The crystallographic structure of the PZT thin films with and without PbO layer were examined by X-ray diffraction. The microstructure of the thin film samples was characterized using optical microscope and atomic force microscope. [ABSTRACT FROM AUTHOR]

The effect of Mn substitution on the magnetic properties and microstructure of the (Ni0.2Cu0.2Zn0.6)1.03(Fe2O3)0.97+0.97xMnO2 (x=0.1–0.5) ferrite sintered at 890 °C were investigated. Mn content increases the initial permeability, but Mn≥0.4 results in the formation of a second phase. The temperature coefficient of initial permeability is strongly affected by the Mn content. When x≥0.3, the temperature coefficient of initial permeability increases quickly. The ferrite can be used in multi-layer chip inductor. [Copyright &y& Elsevier]

Abstract: ZnTa2O6 microwave dielectric ceramics have been prepared using ZnTa2O6 nano-powders synthesized by sol–gel processing in this study. The crystal structure and microstructure of the ZnTa2O6 powders and ceramics were characterized by XRD and SEM techniques. ZnTa2O6 ceramics can be densified at a lower sintering temperature of 1200°C. Microwave dielectric properties show that both of Q × f and ɛ r values are lower than those of ceramics prepared by solid state route, and the τ f values do not show different from that of solid state route. ZnTa2O6 ceramics sintered at 1200°C exhibit good microwave dielectric properties: Q × f =50,600GHz, ɛ r =35.12 and τ f =9.69ppm/°C. [Copyright &y& Elsevier]