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In this paper, mm–wave low cost single and multiple input and multiple output (MIMO) planar microstrip antenna suitable for futuristic K–(18–26.5GHz), K a –band (26.5–40GHz) and local multipoint distribution systems (LMDS) applications is presented. The proposed structure achieves impedance bandwidth of 22.77 GHz (17.23–40GHz) with a peak gain of 13.69 dBi that notably covers the LMDS modern wireless communication application requirement. This achieves 5 dBi gain-bandwidth of 9.07 GHz (26.77–35.85GHz) and 17 GHz (19–36GHz) for single element and MIMO antenna with four elements in cascaded form respectively. The improvement in gain and impedance bandwidth is augmented after exciting multiple resonances of antenna by etching of two 3-armed H-shaped slots (3-AHSS) and inverted T-shaped slots (ITSS) symmetrically in the patch. With these etchings the copper losses and vertical components of current are controlled. The fabricated prototype of size 37 × 15 m m 2 is connected through a mm–wave supporting frequency connector of 2.92 mm and 50 Ω coaxial type to Vector Network Analyzer (VNA) Bench of modal number Rohde and Schwarz (ZNB–40) for measurement of performance parameters and it is found to be in good promise with simulated results. [ABSTRACT FROM AUTHOR]

A U-shaped antenna is printed on polytetrafluoroethylene film, deposited on a copper base having air cavity inside, using thin film micro-strip technology. This antenna is as compact as the rectangular patch and covers the 51.5-62 GHz band. Unlike the silicon substrate, its metallic support yields better radiation patterns. [ABSTRACT FROM AUTHOR]

This paper presents the first wirelessly synchronized multichip array (WSMA) in 65-nm CMOS. The proposed architecture makes use of a central wireless signal to synchronize an mm-wave array, eliminating the need for connecting wires between the array elements. Wireless injection locking of a single chip is successfully demonstrated, and a 3-dB linewidth of 400 Hz at a carrier frequency of 50 GHz is achieved (stability ratio of 8 ppb). In addition, a two-element WSMA with an array aperture greater than 20 wavelengths is demonstrated using the proposed transceiver architecture. The reported transceiver includes a receiving on-chip antenna, a low-noise amplifier, an injection-locked voltage-controlled oscillator, a buffer amplifier, an in-phase/quadrature generator, a phase shifter, a power amplifier, and a transmitting on-chip antenna. The chip is fabricated in a 65-nm CMOS process and occupies an area of 1.7 mm $\times 3.8$ mm. This paper sets the foundation for increasing the array aperture through wireless injection locking, extending traditional array systems into the high-resolution, narrow-beamwidth regime. [ABSTRACT FROM PUBLISHER]