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1. Resolution limits of electron-beam lithography toward the atomic scale.

Author

Manfrinato VR, Zhang L, Su D, Duan H, Hobbs RG, Stach EA, and Berggren KK

Subjects
Electronics, Hydrogen chemistry, Spectroscopy, Electron Energy-Loss, Electrons, Microscopy, Electron, Scanning Transmission, Organosilicon Compounds chemistry
Abstract

We investigated electron-beam lithography with an aberration-corrected scanning transmission electron microscope. We achieved 2 nm isolated feature size and 5 nm half-pitch in hydrogen silsesquioxane resist. We also analyzed the resolution limits of this technique by measuring the point-spread function at 200 keV. Furthermore, we measured the energy loss in the resist using electron-energy-loss spectroscopy.

Published
2013
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