1. Synthesis and characterization of NiO-doped p-type AZO films fabricated by sol–gel method
- Author
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Li, Lei, Hui, K.S., Hui, K.N., Park, H.W., Hwang, D.H., Cho, Shinho, Lee, S.K., Song, P.K., Cho, Y.R., Lee, Heesoo, Son, Y.G., and Zhou, W.
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NICKEL compounds , *THIN films , *MICROFABRICATION , *SOL-gel processes , *METALLIC oxides , *INORGANIC synthesis , *ANNEALING of metals , *METALLIC glasses - Abstract
Abstract: NiO-doped p-type AZO (Al/Zn=1.5at.%) films were synthesized on glass substrates using a simple and low cost sol–gel solution method. p-type conductivity could be achieved by annealing the NiO:AZO films in N2/H2 forming gas at 550°C. The real Al/Zn and Ni/Zn ratio, hole concentration, hole mobility and resistivity of the 1.5–2mol% NiO-doped AZO films were 0.26–0.29, 0.06–0.09, 3.15×1018–2.18×1020 cm−3, 2.33–12.76cm2/Vs, and 2.39×10−1–1.24×10−2 Ωcm, respectively. I–V measurements of the p–n junction (ITO/NiO:AZO) revealed rectifying I–V characteristics, confirming that these NiO:AZO films exhibit p-type conductivity. This study opens the possibility of developing highly conductive p-type composite transparent conducting oxides for optoelectronic devices. [Copyright &y& Elsevier]
- Published
- 2012
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