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The quantum Hall states at filling factors $ν=5/2$ and $7/2$ are expected to have Abelian charge $e/2$ quasiparticles and non-Abelian charge $e/4$ quasiparticles. The non-Abelian statistics of the latter has been predicted to display a striking interferometric signature, the even-odd effect. By measuring resistance oscillations as a function of magnetic field in Fabry-Pérot interferometers using new high purity heterostructures, we for the first time report experimental evidence for the non-Abelian nature of excitations at $ν=7/2$. At both $ν=5/2$ and $7/2$ we also examine, for the first time, the fermion parity, a topological quantum number of an even number of non-Abelian quasiparticles. The phase of observed $e/4$ oscillations is reproducible and stable over long times (hours) near both filling factors, indicating stability of the fermion parity. At both fractions, when phase fluctuations are observed, they are predominantly $π$ phase flips, consistent with either fermion parity change or change in the number of the enclosed $e/4$ quasiparticles. We also examine lower-frequency oscillations attributable to Abelian interference processes in both states. Taken together, these results constitute new evidence for the non-Abelian nature of $e/4$ quasiparticles; the observed life-time of their combined fermion parity further strengthens the case for their utility for topological quantum computation., Final version, nearly identical to the one published in Phys. Rev. X sans some questionable superficial changes insisted upon by the PRX editors and with Supplementary Materials included after the main text

Design of a Fabry-Perot (double point contact) interferometer to measure fractional quantum Hall effect quasiparticle charge properties, and in particular the 5/2 excitations, poses an important trade-off: the device size should be minimized to allow two path interference, since the coherence length of the quasiparticles in the correlated states are expected be limited, yet a small device promotes the dominance of Coulomb charging effects which would overwhelm the Aharonov-Bohm interference effect. In this study a series of small but different size interferometers from the same high density heterostructure wafer are examined for the presence of Coulomb effects versus Aharonov-Bohm (A-B) interference effect when operated in gate configurations that support the 5/2, 7/3, and 8/3 fractional quantum Hall effects. The device sizes vary by more than a factor of three, and over this range explicitly show specific properties of A-B interference, but not Coulomb dominated effects. Given these A-B interference results, the coherence length of the charge e/4 interference is extracted. The coherence length of non-Abelian e/4 quasiparticles is an important parameter for design and development of complex interference devices used to study and apply this exotic excitation. As in prior observations of e/4 excitations, A-B e/4 and e/2 oscillations in alternation are observed in these multiple devices. The amplitudes of the e/4 oscillations are observed to be dramatically reduced for larger area interferometers. Path-length limits are derived from interferometer areas determined directly by A-B measurements, and the attenuation lengths of the e/4 oscillations are shown to be micron to sub-micron scale. This coherence length is consistent with that of the 7/3 excitations measured here, and consistent with theoretical models., Comment: 31 pages, 14 figures. arXiv admin note: text overlap with arXiv:1204.1993

Non-Abelian e/4 quasiparticles at 5/2 filling factor in a correlated two-dimensional electron gas have a proposed specific property in an interference measurement of their edge propagation: encircling an even number of localized e/4 quasiparticles allows expression of e/4 Aharonov-Bohm (A-B) oscillations, but suppression of these oscillations will occur with an odd number encircled. This picture is tested explicitly here in multiple interferometers of different areas. The encircled localized e/4 quasiparticle number near 5/2 filling factor is changed by sweeping B-field, and oscillations are observed in resistance near 5/2 of period specific to that device area for each interferometer. The product of the measured interferometric area of each device and the respective 5/2 resistance oscillation period is found to agree with the expected flux quanta addition needed for parity change in the localized e/4 number. This result shows a highly specific non-Abelian property of the quasiparticle excitations at 5/2 filling expressed in multiple interferometers., 18 pages, 5 figures

It is a theoretical conjecture that 5/2 fractional quantum Hall state charge e/4 excitations may obey exotic non-Abelian statistics. In edge state interference these purported non-Abelian quasiparticles should display period e/4 Aharonov-Bohm oscillations if the interfering quasiparticle encircles an even number of localized e/4 charges, but suppression of oscillations if an odd number is encircled. To test this hypothesis, here we perform swept area interference measurements at 5/2. We observe an alternating pattern of e/4 and e/2 period oscillations in resistance. This aperiodic alternation is consistent with proposed non-Abelian properties: the e/4 oscillations occur for encircling an even number of localized quasiparticles, e/2 oscillations are expressed when encircling an odd number. Aperiodic alternation corresponds to the expected area sweep sampling the localized quasiparticles. Importantly, adding localized quasiparticles to the encircled area by changing magnetic field induces interchange of the e/4 and e/2 oscillation periods, specifically consistent with non-Abelian e/4 quasiparticles., 27 pages, 10 figures; revised version contains additional new data

Two fundamental extensions to the function of previously described fully field effect two-dimensional (2D) electron heterostructures are presented: First, using the same basic heterostructure design of lithographically defined contacts overlain by both an insulating layer and top-gate employed for electron systems, appropriate contact material allows a high mobility 2D hole layer to be populated. Second, a simple method for producing mesoscopic structures in these devices is presented in which small-scale metallic patterns are placed on the heterostructure under the insulating and global gate layers which allows local carrier density tuning via the overlapping gate arrays. Example devices using these generally applicable methods are demonstrated.