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Band structure determines the motion of electrons in a solid, giving rise to exotic phenomena when properly engineered. Drawing an analogy between electrons and photons, artificially designed optical lattices indicate the possibility of a similar band modulation effect in graphene systems. Yet due to the fermionic nature of electrons, modulated electronic systems promise far richer categories of behaviors than those found in optical lattices. Here, we uncovered a strong modulation of electronic states in bilayer graphene subject to periodic potentials. We observed for the first time the hybridization of electron and hole sub-bands, resulting in local band gaps at both primary and secondary charge neutrality points. Such hybridization leads to the formation of flat bands, enabling the study of correlated effects in graphene systems. This work may also offer a viable platform to form and continuously tune Majorana zero modes, which is important to the realization of topological quantum computation.

As an alternative to atomistic calculations of long-wavelength acoustic modes of atomically thin layers, which are known to converge very slowly, we propose a quantitatively predictive and physically intuitive approach based on continuum elasticity theory. We describe a layer, independent of its thickness, by a membrane, characterize its elastic behavior by a $(3{\times}3)$ elastic matrix as well as the flexural rigidity. We present simple quantitative expressions for frequencies of long-wavelength acoustic modes, which we determine using 2D elastic constants calculated by {\em ab initio} Density Functional Theory. The calculated spectra accurately reproduce observed and calculated long-wavelength phonon spectra of graphene and phosphorene, the monolayer of black phosphorus. Our approach also correctly describes the observed dependence of the radial breathing mode frequency on the diameter of carbon fullerenes and nanotubes., Accepted by Physical Review B (2016)

We combine {\em ab initio} density functional theory (DFT) structural studies with DFT-based nonequilibrium Green function calculations to investigate how the presence of non-hexagonal rings affects electronic transport in graphitic structures. We find that infinite monolayers, finite-width nanoribbons and nanotubes formed of 5-8 haeckelite with only 5- and 8-membered rings are generally more conductive than their graphene-based counterparts. Presence of haeckelite defect lines in the perfect graphitic structure, a model of grain boundaries in CVD-grown graphene, increases the electronic conductivity and renders it highly anisotropic., 6 figures

As a way to further improve the electronic properties of group V layered semiconductors, we propose to form in-layer 2D heterostructures of black phosphorus and grey arsenic. We use \textit{ab initio} density functional theory to optimize the geometry, determine the electronic structure, and identify the most stable allotropes as a function of composition. Since pure black phosphorus and pure grey arsenic monolayers differ in their equilibrium structure, we predict a structural transition and a change in frontier states, including a change from a direct-gap to an indirect-gap semiconductor, with changing composition., Comment: 6 pages, 4 figures

Preceding the current interest in layered materials for electronic applications, research in the 1960's found that black phosphorus combines high carrier mobility with a fundamental band gap. We introduce its counterpart, dubbed few-layer phosphorene, as a new 2D p-type material. Same as graphene and MoS2, phosphorene is flexible and can be mechanically exfoliated. We find phosphorene to be stable and, unlike graphene, to have an inherent, direct and appreciable band-gap that depends on the number of layers. Our transport studies indicate a carrier mobility that reflects its structural anisotropy and is superior to MoS2. At room temperature, our phosphorene field-effect transistors with 1.0 um channel length display a high on-current of 194 mA/mm, a high hole field-effect mobility of 286 cm2/Vs, and an on/off ratio up to 1E4. We demonstrate the possibility of phosphorene integration by constructing the first 2D CMOS inverter of phosphorene PMOS and MoS2 NMOS transistors.

We use ab initio density functional theory to study the equilibrium geometry and electronic structure of few-layer grey arsenic. In contrast to the bulk structure that is semimetallic, few-layer grey As displays a significant band gap that depends sensitively on the number of layers, in-layer strain, layer stacking and inter-layer spacing. A metal-semiconductor transition can be introduced by changing the number of layers or the in-layer strain. We interpret this transition by an abrupt change in the spatial distribution of electronic states near the top of the valence band., Comment: 5 pages, 3 figures

Combining time-dependent density functional calculations for electrons with molecular dynamics simulations for ions, we investigate the dynamics of excited carriers in a (3,3) carbon nanotube at different temperatures. Following an hv=6.8 eV photoexcitation, the carrier decay is initially dominated by efficient electron-electron scattering. At room temperature, the excitation gap is reduced to nearly half its initial value after ~230 fs, where coupling to phonons starts dominating the decay. We show that the onset point and damping rate in the phonon regime change with initial ion velocities, a manifestation of temperature dependent electron-phonon coupling., Comment: 8 pages, 3 figures, 1 EPAPS supplementary file