Search

We analyze, from a quantum information theory perspective, the possibility of realizing a SU(4) entangled Kondo regime in semiconductor double quantum dot devices. We focus our analysis on the ground state properties and consider the general experimental situation where the coupling parameters of the two quantum dots differ. We model each quantum dot with an Anderson type Hamiltonian including an interdot Coulomb repulsion and tunnel couplings for each quantum dot to independent fermionic baths. We find that the spin and pseudospin entanglements can be made equal, and the SU(4) symmetry recovered, if the gate voltages are chosen in such a way that the average charge occupancies of the two quantum dots are equal, and the double occupancy on the double quantum dot is suppressed. We present density matrix renormalization group numerical results for the spin and pseudospin entanglement entropies, and analytical results for a simplified model that captures the main physics of the problem., Comment: 9 pages, 7 figures, Phys. Rev. B

Using different techniques, and Fermi-liquid relationships, we calculate the variation with the applied magnetic field (up to second order) of the zero-temperature equilibrium conductance through a quantum dot described by the impurity Anderson model. We focus on the strong-coupling limit U, where U is the Coulomb repulsion and is half the resonant-level width, and consider several values of the dot level energy E d , ranging from the Kondo regime to the intermediate-valence regime F − E d ∼ , where F is the Fermi energy. We have mainly used the density-matrix renormalization group (DMRG) and the numerical renormalization group (NRG) combined with renormalized perturbation theory (RPT). Results for the dot occupancy and magnetic susceptibility from the DMRG and NRG + RPT are compared with the corresponding Bethe ansatz results for U → ∞, showing an excellent agreement once E d is renormalized by a constant Haldane shift. For U < 3 a simple perturbative approach in U agrees very well with the other methods. The conductance decreases with the applied magnetic field for dot occupancies n d ∼ 1 and increases for n d ∼ 0.5 or n d ∼ 1.5 regardless of the value of U . We also relate the energy scale for the magnetic-field dependence of the conductance with the width of thelow-energy peak in the spectral density of the dot. Fil: Hamad, Ignacio Javier. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Rosario. Instituto de Física de Rosario. Universidad Nacional de Rosario. Instituto de Física de Rosario; Argentina Fil: Gazza, Claudio Javier. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Rosario. Instituto de Física de Rosario. Universidad Nacional de Rosario. Instituto de Física de Rosario; Argentina Fil: Andrade Hoyos, Jhon Alejandro. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina Fil: Aligia, Armando Ángel. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina Fil: Cornaglia de la Cruz, Pablo Sebastian. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina Fil: Roura Bas, Pablo Gines. Comisión Nacional de Energía Atómica. Centro Atómico Constituyentes; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina

We present results for a model that describes a quantum point contact. We show how electron-electron correlations, within the unrestricted Hartree-Fock approximation, generate a magnetic moment in the point contact. Having characterized the magnetic structure of the contact, we map the problem onto a simple one-channel model and calculate the temperature dependence of the conductance for different gate voltages. Our results are in good agreement with experimental results obtained in GaAs devices and support the idea of Kondo effect in these systems., Comment: 7 pages, 4 figures

We analyze the low energy properties of a device with $N+1$ quantum dots in a star configuration. A central quantum dot is tunnel coupled to source and drain electrodes and to $N$ quantum dots. Extending previous results for the $N=2$ case we show that, in the appropriate parameter regime, the low energy Hamiltonian of the system is a ferromagnetic Kondo model for a $S=(N-1)/2$ impurity spin. For small enough interdot tunnel coupling, however, a two-stage Kondo effect takes place as the temperature is decreased. The spin $1/2$ in the central quantum dot is Kondo screened first and at lower temperatures the antiferromagnetic coupling to the side coupled quantum dots leads to an underscreened $S=N/2$ Kondo effect. We present numerical results for the thermodynamic and spectral properties of the system which show a singular behavior at low temperatures and allow to characterize the different strongly correlated regimes of the device., Comment: 9 pages, 7 figures, to be published in Phys. Rev. B

We analyze the transport properties of a double quantum dot device in the side-coupled configuration. A small quantum dot (QD), having a single relevant electronic level, is coupled to source and drain electrodes. A larger QD, whose multilevel nature is considered, is tunnel-coupled to the small QD. A Fermi liquid analysis shows that the low temperature conductance of the device is determined by the total electronic occupation of the double QD. When the small dot is in the Kondo regime, an even number of electrons in the large dot leads to a conductance that reaches the unitary limit, while for an odd number of electrons a two stage Kondo effect is observed and the conductance is strongly suppressed. The Kondo temperature of the second stage Kondo effect is strongly affected by the multilevel structure of the large QD. For increasing level spacing, a crossover from a large Kondo temperature regime to a small Kondo temperature regime is obtained when the level spacing becomes of the order of the large Kondo temperature., Comment: 13 pages, 11 figures, minor changes

We analyze the electronic properties of adatom doped graphene in the low impurity concentration regime. We focus on the Anderson localized regime and calculate the localization length ($\xi$) as a function of the electron doping and an external magnetic field. The impurity states hybridize with carbon's $p_z$ states and form a partially filled band close to the Dirac point. Near the impurity band center, the chiral symmetry of the system's effective Hamiltonian is partially preserved which leads to a large enhancement of $\xi$. The sensitivity of transport properties, namely Mott's variable range hopping scale $T_0$, to an external magnetic field perpendicular to the graphene sheet leads to a colossal magnetoresistance effect, as observed in recent experiments., Comment: 5 pages, 4 figs. Few comments and references added. To appear in PRB

We report low-temperature transport measurements through a double quantum dot device in a configuration where one of the quantum dots is coupled directly to the source and drain electrodes, and a second (side-coupled) quantum dot interacts electrostatically and via tunneling to the first one. As the interdot coupling increases, a crossover from weak to strong interdot tunneling is observed in the charge stability diagrams that present a complex pattern with mergings and apparent crossings of Coulomb blockade peaks. While the weak coupling regime can be understood by considering a single level on each dot, in the intermediate and strong coupling regimes, the multi-level nature of the quantum dots needs to be taken into account. Surprisingly, both in the strong and weak coupling regimes, the double quantum dot states are mainly localized on each dot for most values of the parameters. Only in an intermediate coupling regime the device presents a single dot-like molecular behavior as the molecular wavefunctions weight is evenly distributed between the quantum dots. At temperatures larger than the interdot coupling energy scale, a loss of coherence of the molecular states is observed., 9 pages, 5 figures

Using density functional theory (DFT), Hartree-Fock, exact diagonalization, and numerical renormalization group methods we study the electronic structure of diluted hydrogen atoms chemisorbed on graphene. A comparison between DFT and Hartree-Fock calculations allows us to identify the main characteristics of the magnetic structure of the defect. We use this information to formulate an Anderson-Hubbard model that captures the main physical ingredients of the system, while still allowing a rigorous treatment of the electronic correlations. We find that the large hydrogen-carbon hybridization puts the structure of the defect half-way between the one corresponding to an adatom weakly coupled to pristine graphene and a carbon vacancy. The impurity's magnetic moment leaks into the graphene layer where the electronic correlations on the C atoms play an important role in stabilizing the magnetic solution. Finally, we discuss the implications for the Kondo effect., 10 pages, 10 figs

We study the electronic structure of diluted F atoms chemisorbed on graphene using density functional theory calculations. We show that the nature of the chemical bonding of a F atom adsorbed on top of a C atom in graphene strongly depends on carrier doping. In neutral samples the F impurities induce a sp^3-like bonding of the C atom below, generating a local distortion of the hexagonal lattice. As the graphene is electron-doped, the C atom retracts back to the graphene plane and for high doping (10^14 cm^-2) its electronic structure corresponds to a nearly pure sp^2 configuration. We interpret this sp^3-sp^2 doping-induced crossover in terms of a simple tight binding model and discuss the physical consequences of this change., Comment: 4 pages, 4 figures. Accepted in Phys. Rev. B. Rapid Comm

We analyze the electronic transport through a model spin-1 molecule as a function of temperature, magnetic field and bias voltage. We consider the effect of magnetic anisotropy, which can be generated experimentally by stretching the molecule. In the experimentally relevant regime the conductance of the unstretched molecule reaches the unitary limit of the underscreened spin- 1 Kondo effect at low temperatures. The magnetic anisotropy generates an antiferromagnetic coupling between the remaining spin 1/2 and a singular density of quasiparticles, producing a second Kondo effect and a reduced conductance. The results explain recent measurements in spin-1 molecules [Science 328 1370 (2010)]., 5 pages, 3 figures, minor changes, accepted for publication in EPL

The ability to make electrical contact to single molecules creates opportunities to examine fundamental processes governing electron flow on the smallest possible length scales. We report experiments in which we controllably stretch individual cobalt complexes having spin S = 1, while simultaneously measuring current flow through the molecule. The molecule's spin states and magnetic anisotropy were manipulated in the absence of a magnetic field by modification of the molecular symmetry. This control enabled quantitative studies of the underscreened Kondo effect, in which conduction electrons only partially compensate the molecular spin. Our findings demonstrate a mechanism of spin control in single-molecule devices and establish that they can serve as model systems for making precision tests of correlated-electron theories., main text: 5 pages, 4 figures; supporting information attached; to appear in Science.

The problem of a magnetic impurity, atomic or molecular, absorbed on top of a carbon atom in otherwise clean graphene is studied using the numerical renormalization group. The spectral, thermodynamic, and scattering properties of the impurity are described in detail. In the presence of a small magnetic field, the low energy electronic features of graphene make possible to inject spin polarized currents through the impurity using a scanning tunneling microscope (STM). Furthermore, the impurity scattering becomes strongly spin dependent and for a finite impurity concentration it leads to spin polarized bulk currents and a large magnetoresistance. In gated graphene the impurity spin is Kondo screened at low temperatures. However, at temperatures larger than the Kondo temperature, the anomalous magnetotransport properties are recovered., 4+ pages, 4 figures. Added references

The low-temperature transport properties of a molecule are studied in the field-effect transitor geometry. The molecule has an internal mechanical mode that modulates its electronic levels and renormalizes both the interactions and the coupling to the electrodes. For a soft mechanical mode the spin fluctuations in the molecule are dominated by the bare couplings while the valence changes are determined by the dressed energies. In this case, the transport properties present an anomalous behavior and the Kondo temperature has a weak gate voltage dependence. These observations are in agreement with recent experimental data., Comment: 4 pages, 3 figures, accepted in PRB RC

We study the electron transport through a magnetic molecular transistor in the Kondo limit using the slave boson technique. We include the electron-phonon coupling and analyze the cases where the spin of the molecule is either S=1/2 or S=1. We use the Schrieffer-Wolff transformation to write down a low energy Hamiltonian for the system. In the presence of electron-phonon coupling, and for $S\smeq1$, the resulting Kondo Hamiltonian has two active channels. At low temperature, these two channels interfere destructively, leading to a zero conductance., 7 pages, 4 figures, to be published in PRB

The Kondo effect in quantum dots attached to ferromagnetic leads with general polarization directions is studied combining poor man scaling and Wilson's numerical renormalization group methods. We show that polarized electrodes will lead in general to a splitting of the Kondo resonance in the quantum dot density of states except for a small range of angles close to the antiparallel case. We also show that an external magnetic field is able to compensate this splitting and restore the unitary limit. Finally, we study the electronic transport through the device in various limiting cases., 6 pages, 4 figures, final version

The interplay of electron-electron and electron-phonon interactions is studied analytically in the Kondo regime. A Holstein electron-phonon coupling is shown to produce a weakening of the gate voltage dependence of the Kondo temperature and may explain the observed anomalies in some of these devices. A molecular center-of-mass mode opens a new channel for charge and spin fluctuations and in the antiadabatic limit the latter are described by an asymmetric two-channel Kondo model. Below the Kondo temperature the system develops a dynamical Jahn-Teller distortion and a low energy peak emerges in the phonon spectral density that could be observed in Raman microscopy experiments., Comment: 6 pages, 4 figures

We study the formation of local magnetic moments in quantum point contacts. Using a Hubbard-like model to describe point contacts formed in a two dimensional system, we calculate the magnetic moment using the unrestricted Hartree approximation. We analyze different type of potentials to define the point contact, for a simple square potential we calculate a phase diagram in the parameter space (Coulomb repulsion - gate voltage). We also present an analytical calculation of the susceptibility to give explicit conditions for the occurrence of a local moment, we present a simple scaling argument to analyze how the stability of the magnetic moment depends on the point contact dimensions., 7 pages, 2 figures

The conductance through a molecular device including electron-electron and electron-phonon interactions is calculated using the Numerical Renormalization Group method. At low temperatures and weak electron-phonon coupling the properties of the conductance can be explained in terms of the standard Kondo model with renormalized parameters. At large electron-phonon coupling a charge analog of the Kondo effect takes place that can be mapped into an anisotropic Kondo model. In this regime the molecule is strongly polarized by a gate voltage which leads to rectification in the current-voltage characteristics of the molecular junction., Comment: 4 pages, 4 figures, minor changes, added references

The linear transport properties of a model molecular transistor with electron-electron and electron-phonon interactions were investigated analytically and numerically. The model takes into account phonon modulation of the electronic energy levels and of the tunnelling barrier between the molecule and the electrodes. When both effects are present they lead to asymmetries in the dependence of the conductance on gate voltage. The Kondo effect is observed in the presence of electron-phonon interactions. There are important qualitative differences between the cases of weak and strong coupling. In the first case the standard Kondo effect driven by spin fluctuations occurs. In the second case, it is driven by charge fluctuations. The Fermi-liquid relation between the spectral density of the molecule and its charge is altered by electron-phonon interactions. Remarkably, the relation between the zero-temperature conductance and the charge remains unchanged. Therefore, there is perfect transmission in all regimes whenever the average number of electrons in the molecule is an odd integer., Comment: 9 pages, 6 figures

The transport properties of a double quantum-dot device with one of the dots coupled to perfect conductors are analyzed using the numerical renormalization group technique and slave-boson mean-field theory. The coupling between the dots strongly influences the transport through the system leading to a non-monotonic dependence of the conductance as a function of the temperature and the magnetic field. For small inter-dot coupling and parameters such that both dots are in the Kondo regime, there is a two-stage screening of the dot's magnetic moments that is reflected in the conductance. In an intermediate temperature regime Kondo correlations develop on one of the dots and the conductance is enhanced. At low temperatures the Kondo effect takes place on the second dot leading to a singlet ground state in which the conductance is strongly suppressed., Comment: 9 pages, 8 figures

We study the transport through a quantum dot, in the Kondo Coulomb blockade valley, embedded in a mesoscopic device with finite wires. The quantization of states in the circuit that hosts the quantum dot gives rise to finite size effects. These effects make the conductance sensitive to the ratio of the Kondo screening length to the wires length and provide a way of measuring the Kondo cloud. We present results obtained with the numerical renormalization group for a wide range of physically accessible parameters., Comment: 4 pages, 5 figures

We present results for the spectral properties of Kondo impurities in nanoscopic systems. Using Wilson's renormalization group we analyze the frequency and temperature dependence of the impurity spectral density for impurities in small systems that are either isolated or in contact with a reservoir. We have performed a detailed analysis of the structure of the impurity spectral density for energies around the Fermi energy for different Fermi energies relative to the intrinsic structure of the local density of states. We show how the electron confinement energy scales introduce new features in the frequency and temperature dependence of the impurity spectral properties., Comment: 8 pages, 9 figures