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The development of new‐type memristors with special performance is of great interest. Herein, an inorganic‐organic hybrid crystalline polyoxometalate (POM) with usual dynamic structures is reported and used as active material for fabricating memristor with unique temperature‐regulated resistive switching behaviors. The hybrid POM not only exhibits tunable thermochromic properties, but also thermal‐induced reversible aggregation and disaggregation reactions, leading to reversible structural transformations in SCSC fashion. Further, the memory device using the hybrid POM as active layer exhibits uncommon performance, which can keep resistive switching silent in the low temperature range of 30–150 °C, but show nonvolatile memory behavior in the high temperature range of 150–270 °C. Particularly, the silent and working states at three special temperatures (30, 150 and 270 °C) can be monitored by chromism. The correlation between structure and resistive switching property of the material has been discussed. The work demonstrates that crystalline inorganic‐organic hybrid POMs are promising materials for making memristors with superior performance. [ABSTRACT FROM AUTHOR]