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Your search keyword '"Antonov, I. N."' showing total 12 results
Start Over Author "Antonov, I. N." Topic memristor
12 results on '"Antonov, I. N."'

9. Resistive Switching in Individual Ferromagnetic Filaments in ZrO2(Y)/Ni Based Memristive Stacks.

Author

Antonov, D. A., Filatov, D. O., Novikov, A. S., Kruglov, A. V., Antonov, I. N., Zdoroveyschev, A. V., and Gorshkov, O. N.

Subjects
MAGNETIC force microscopy, ATOMIC force microscopes, DIELECTRIC films, ATOMIC force microscopy, FIBERS
Abstract

The resistive switching effect in individual ferromagnetic filaments in memristive stacks based on ZrO2(Y)/Ni functional layers was studied experimentally. A conductive probe of an atomic force microscope played a role of a movable top electrode of a virtual memristive stack. The features of bipolar-type resistive switching found were related to the rapture and restoring of the filaments containing Ni atoms in the ZrO2(Y) dielectric films and are probably caused by different degree of metallization of the filaments. The filaments fromed were manifested in the images obtained by magnetic force microscopy as single-domain ferromagnetic particles. [ABSTRACT FROM AUTHOR]

Published
2024
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10. Effect of internal noise on the relaxation time of an yttria stabilized zirconia-based memristor

Author

Filatov D. O., Koryazhkina M. N., Novikov A. S., Shishmakova V. A., Shenina M. E., Antonov I. N., Gorshkov O. N., Agudov N. V., Carollo A., Valenti D., Spagnolo B., Filatov D.O., Koryazhkina M.N., Novikov A.S., Shishmakova V.A., Shenina M.E., Antonov I.N., Gorshkov O.N., Agudov N.V., Carollo A., Valenti D., and Spagnolo B.

Subjects
Yttria stabilized zirconia, Metastability, Settore FIS/02 - Fisica Teorica, Modelli E Metodi Matematici, General Mathematics, Applied Mathematics, Beneficiary role of noise, General Physics and Astronomy, Resistive switching, Statistical and Nonlinear Physics, Memristor, Noise induced stabilization
Abstract

The effects of temperature on the switching kinetics of an yttrium-stabilized zirconia-based memristor from a low-resistance state to a high-resistance state have been experimentally investigated. It was found that the memristor relaxation time depends on the temperature in a non-monotonous way, with a maximum observed at the temperature close to 55 °C. This nonmonotonic behavior is a signature of the noise-enhanced stability phenomenon observed in all physical and complex systems characterized by metastable states.

Published
2022
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11. Effect of Optical Illumination on Resistive Switching in MOS Structures Based on ZrO2(Y) Films with Au Nanoparticles.

Author

Filatov, D. O., Shenina, M. E., Rozhentsov, I. A., Koryazhkina, M. N., Novikov, A. S., Antonov, I. N., Ershov, A. V., Gorshkov, A. P., and Gorshkov, O. N.

Subjects
LIGHT absorption, METAL oxide semiconductor field-effect transistors, LIGHTING, PHOTOEXCITATION
Abstract

The effect of optical illumination in the visible band on the resistive switching in ITO/ZrO2(Y)/n-Si metal—oxide—semiconductor (MOS) structures (including those with Au nanoparticles embedded in the ZrO2(Y) layer) is studied. It is found that the dependence of the logical gap between the resistance states on the photoexcitation intensity had a threshold nature. The logical gap decreases with further increasing photoexcitation intensity above the threshold. This effect is ascribed to the heating of active layers of the MOS structure due to interband optical absorption in the Si substrate. The suppression of resistive switching by photoexcitation at a wavelength of 650 nm (corresponding to plasmon resonance in Au nanoparticles) due to plasmon optical absorption in nanoparticles is observed. [ABSTRACT FROM AUTHOR]

Published
2021
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12. The Formation of Nanosized Ferromagnetic Ni Filaments in Films of ZrO2(Y).

Author

Antonov, D. A., Novikov, A. S., Filatov, D. O., Kruglov, A. V., Antonov, I. N., Zdoroveishchev, A. V., and Gorshkov, O. N.

Subjects
ATOMIC force microscopes, FIBERS, MAGNETIC films, MEMRISTORS, MAGNETISM, ATOMIC force microscopy
Abstract

Conducting ferromagnetic nanosized filaments consisting of Ni atoms are formed in thin ZrO2(Y)/Ni films using an atomic force microscope probe. The contact of the probe to such films (a virtual composite memristor device) exhibits resistive switching of the bipolar type associated with the destruction and restoration of Ni filaments in the ZrO2(Y) film. The region in which the conductive filament emerges onto the surface of the ZrO2(Y) film manifests itself in the magnetic force image as a single-domain ferromagnetic particle. [ABSTRACT FROM AUTHOR]

Published
2021
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