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Unidirectional magnetoresistance (UMR) has been observed in a variety of stacks with ferromagnetic/spin Hall material bilayer structures. In this work, we reported UMR in antiferromagnetic insulator Fe2O3/Pt structure. The UMR has a negative value, which is related to interfacial Rashba coupling and band splitting. Thickness-dependent measurement reveals a potential competition between UMR and the unidirectional spin Hall magnetoresistance (USMR). This work revealed the existence of UMR in antiferromagnetic insulators/heavy metal bilayers and broadens the way for the application of antiferromagnet-based spintronic devices.

Electrical manipulation of spin textures inside antiferromagnets represents a new opportunity for developing spintronics with superior speed and high device density. Injecting spin currents into antiferromagnets and realizing efficient spin-orbit-torque-induced switching is however still challenging due to the complicated interactions from different sublattices. Meanwhile, because of the diminishing magnetic susceptibility, the nature and the magnitude of current-induced magnetic dynamics remain poorly characterized in antiferromagnets, whereas spurious effects further complicate experimental interpretations. In this work, by growing a thin film antiferromagnetic insulator, {\alpha}-Fe2O3, along its non-basal plane orientation, we realize a configuration where an injected spin current can robustly rotate the N\'eel vector within the tilted easy plane, with an efficiency comparable to that of classical ferromagnets. The spin-orbit torque effect stands out among other competing mechanisms and leads to clear switching dynamics. Thanks to this new mechanism, in contrast to the usually employed orthogonal switching geometry, we achieve bipolar antiferromagnetic switching by applying positive and negative currents along the same channel, a geometry that is more practical for device applications. By enabling efficient spin-orbit torque control on the antiferromagnetic ordering, the tilted easy plane geometry introduces a new platform for quantitatively understanding switching and oscillation dynamics in antiferromagnets., Comment: 21 pages, 5 figures

Advancing the development of spin-wave devices requires high-quality low-damping magnetic materials where magnon spin currents can propagate efficiently and interact effectively with local magnetic textures. We show that magnetic domain walls (DW) can modulate spin-wave transport in perpendicularly magnetized channels of Bi-doped yttrium-iron-garnet (BiYIG). Conversely, we demonstrate that the magnon spin current can drive DW motion in the BiYIG channel device by means of magnon spin-transfer torque. The DW can be reliably moved over 15 um distances at zero applied magnetic field by a magnon spin current excited by an RF pulse as short as 1 ns. The required energy for driving DW motion is orders of magnitude smaller than those reported for metallic systems. These results facilitate low-switching-energy magnonic devices and circuits where magnetic domains can be efficiently reconfigured by magnon spin currents flowing within magnetic channels., Comment: 17 pages

We report broadband microwave absorption spectroscopy of the layered antiferromagnet CrCl3. We observe a rich structure of resonances arising from quasi-two-dimensional antiferromagnetic dynamics. Due to the weak interlayer magnetic coupling in this material, we are able to observe both optical and acoustic branches of antiferromagnetic resonance in the GHz frequency range and a symmetry-protected crossing between them. By breaking rotational symmetry, we further show that strong magnon-magnon coupling with large tunable gaps can be induced between the two resonant modes.

Despite the potential advantages of information storage in antiferromagnetically coupled materials, it remains unclear whether one can control the magnetic moment orientation efficiently because of the cancelled magnetic moment. Here, we report spin-orbit torque induced magnetization switching of ferrimagnetic Co1-xTbx films with perpendicular magnetic anisotropy. Current induced switching is demonstrated in all of the studied film compositions, including those near the magnetization compensation point. The spin-orbit torque induced effective field is further quantified in the domain wall motion regime. A divergent behavior that scales with the inverse of magnetic moment is confirmed close to the compensation point, which is consistent with angular momentum conservation. Moreover, we also quantify the Dzyaloshinskii-Moriya interaction energy in the Ta/Co1-xTbx system and we find that the energy density increases as a function of the Tb concentration. The demonstrated spin-orbit torque switching, in combination with the fast magnetic dynamics and minimal net magnetization of ferrimagnetic alloys, promises spintronic devices that are faster and with higher density than traditional ferromagnetic systems.

Two promising strategies for achieving efficient control of magnetization in future magnetic memory and non-volatile spin logic devices are spin transfer torque from spin polarized currents and voltage-controlled magnetic anisotropy (VCMA). Spin transfer torque is in widespread development as the write mechanism for next-generation magnetic memory, while VCMA offers the potential of even better energy performance due to smaller Ohmic losses. Here we introduce a 3-terminal magnetic tunnel junction (MTJ) device that combines both of these mechanisms to achieve new functionality: gate-voltage-modulated spin torque switching. This gating makes possible both more energy-efficient switching and also improved architectures for memory and logic applications, including a simple approach for making magnetic memories with a maximum-density cross-point geometry that does not require a control transistor for every MTJ.

The spin Hall effect (SHE) generates spin currents within nonmagnetic materials. Previously, studies of the SHE have been motivated primarily to understand its fundamental origin and magnitude. Here we demonstrate, using measurement and modeling, that in a Pt/Co bilayer with perpendicular magnetic anisotropy the SHE can produce a spin transfer torque that is strong enough to efficiently rotate and reversibly switch the Co magnetization, thereby providing a new strategy both to understand the SHE and to manipulate magnets. We suggest that the SHE torque can have a similarly strong influence on current-driven magnetic domain wall motion in Pt/ferromagnet multilayers. We estimate that in optimized devices the SHE torque can switch magnetic moments using currents comparable to those in magnetic tunnel junctions operated by conventional spin-torque switching, meaning that the SHE can enable magnetic memory and logic devices with similar performance but simpler architecture than the current state of the art.