1. Obtaining ultra-high throwing power in Cu electroplating of flexible printed circuit by fast consumption of a suppressor
- Author
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Qingsheng Zhu, Xiang-Fu Wei, Jian Ku Shang, and Jingdong Guo
- Subjects
Materials science ,INT ,Analytical chemistry ,Electrolyte ,Condensed Matter Physics ,Electrochemistry ,Chloride ,Flexible electronics ,Adsorption ,Iodonitrotetrazolium ,medicine ,General Materials Science ,Electrical and Electronic Engineering ,Electroplating ,medicine.drug - Abstract
The high throwing power (TP) value is one of the most important parameters for the Cu electroplating of through-holes in flexible printed circuit (FPC). It was found that an ultra-high TP value could be obtained using a specific suppressor, i.e., iodonitrotetrazolium chloride (INT) in the electrolyte. The ultra-high TP value was attributed to fast-consumption of this suppressor instead of traditional convection-dependence adsorption mechanism. A consumption model was built and simulated to clarify the formation of the ∆θ, i.e., the difference of suppressor fractional coverage between the entrance and center of through-holes sidewalls. It revealed that the TP, proportional to the ∆θ, was determined by the consumption rate of a suppressor. This simulation results were well consistent with the results of electroplating using INT with different concentration. The electrochemical analysis verified the characteristics of fast consumption of INT due to the reduction reaction. The difference of residual INT between the entrance and center of the plated through-holes confirmed the occurrence of ∆θ. These results supported the opinion that the ultra-high TP value was obtained by fast-consumption mechanism of INT suppressor.
- Published
- 2021