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It is very important to take into consideration the distribution of range, range straggling, and lateral spread of ions implanted into semiconductor materials during designing and fabrication of semiconductor integration devices by means of ion implantation. Er ions with energies between 200 and 500 keV are implanted in SOI (silicon-on-insulator) samples. The mean projection range Rp and the range stragglings Rp of Er ions with a dose of 21015 cm-2 implanted in SOI samples are measured by Rutherford backscattering (RBS) technique. The obtained data are then compared with those predicted by TRIM codes. It is seen that the experimental data of Rp agree well with the theoretical values. However, there are great differences between the experimental data and the theoretical values of Rp.

Effect of Mg doping on the properties of AlGaN layers gro wn on sapphire substrates by metal_organic chemical vapor deposition were studie d using x_ray diffraction and Raman scattering. When the doping of Mg was low, the E2 mode shifted to lower frequency and the full width half at maximum of the rocking curve and A1(LO) mode decreased. However, as the flow rate of CP2Mg increased ti ll the AlGaN was doped with a dose as high as 4×102/sup>cm-3, the quali ty of film de creased gradually and the E2mode shifted to higher frequency, indicat ing a compressive stress in the films. Finally, the relation between the Raman s hift and the stress alteration was described by Δσ＝-0298+0562ΔE.