1. AlGaN/GaN Metal-Oxide-Semiconductor High-Electron Mobility Transistors Using Ga2O3 Gate Dielectric Layer Grown by Vapor Cooling Condensation System
- Author
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Ting Wei Chang, Ching-Ting Lee, and Hsin Ying Lee
- Subjects
010302 applied physics ,Materials science ,Band gap ,business.industry ,Transconductance ,Gate dielectric ,Transistor ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Cutoff frequency ,Electronic, Optical and Magnetic Materials ,Threshold voltage ,law.invention ,law ,0103 physical sciences ,Materials Chemistry ,Breakdown voltage ,Optoelectronics ,Electrical and Electronic Engineering ,0210 nano-technology ,business ,Voltage - Abstract
In this study, intrinsic Ga2O3 (i-Ga2O3) film was deposited at about 80 K using a vapor cooling condensation system. Its bandgap energy was 5.0 eV. Low oxygen vacancy and defects were verified by using photoluminescence and Hall measurements. When a 40-nm-thick i-Ga2O3 film was used as the gate dielectric layer of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOS-HEMTs), threshold voltage, and gate breakdown voltage were − 3.5 V and − 538.0 V, respectively. The associated gate leakage current of the devices operating at a gate-source voltage of − 100 V was 0.57 μA. Furthermore, a saturation drain-source current of 186.2 mA/mm and a maximum extrinsic transconductance of 85.8 mS/mm were obtained for the devices operating at a gate-source voltage of 0 V and a drain-source voltage of 10 V. The unit gain cutoff frequency and the maximum oscillation frequency were 5.7 GHz and 11.0 GHz, respectively. The normalized noise and Hooge’s coefficient were 3.79 × 10−14 Hz−1 and 5.06 × 10−5, respectively, when the devices operated at a frequency of 100 Hz, with a drain-source voltage of 1 V and a gate-source voltage of 5 V.
- Published
- 2021