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Rutting resistance is an important consideration for paving asphalt mixes. The cause of rutting is a shear strain in the asphalt pavement structure. Here, the rutting behavior of asphalt pavements was evaluated through laboratory simulations using the Hamburg Wheel-Tracking Test (HWTT), UK Wheel-Tracking Test (UKWTT), and Scaled Accelerated Load Simulator (SALS) test. The correlation between the three simulation tests was analyzed to determine the conversion factor (CF). Two parameters of temperature and speed of simulation testing were evaluated in this study. Subsequently, the representative frequency and dynamic modulus were calculated with consideration of viscoelasticity and time–temperature superposition. Using logical analysis, CF between the three simulation tests was validated. The results showed that the full-scale test yielded the highest stiffness modulus of 4,015 MPa, and the UKWTT yielded the lowest stiffness modulus of 1,857 MPa at 60 °C. From the HWTT results, it was found that the impact of moisture damage at 40 °C is not substantial compared to that at 50 °C. The conversion factor of HWTT at 40 °C, HWTT at 50 °C and UKWTT at 60 °C to SALS were 0.92, 0.74, and 0.63, respectively. Furthermore, the similar rutting performance among SALS, HWTT at 40 °C in dry and wet conditions, and HWTT at 50 °C in dry condition can be observed when the CF is applied. Lastly, the effectiveness of the conversion factor is diminished with increasing rutting damage.

This paper studies the influence of geometric structure cutting on transverse crack treatment with the discrete elements method (DEM). Suitable strategies for geometrical structure cutting are put ...

Flexible manipulation of the carrier transport behaviors in two-dimensional materials determines their values of practical application in logic circuits. Here, we demonstrated the carrier-type mani...

Exploitation of the oxidation behaviour in an environmentally sensitive semiconductor is significant to modulate its electronic properties and develop unique applications. Here, we demonstrate a native oxidation-inspired InSe field-effect transistor as an artificial synapse in device level that benefits from the boosted charge trapping under ambient conditions. A thin InOx layer is confirmed under the InSe channel, which can serve as an effective charge trapping layer for information storage. The dynamic characteristic measurement is further performed to reveal the corresponding uniform charge trapping and releasing process, which coincides with its surface-effect-governed carrier fluctuations. As a result, the oxide-decorated InSe device exhibits nonvolatile memory characteristics with flexible programming/erasing operations. Furthermore, an InSe-based artificial synapse is implemented to emulate the essential synaptic functions. The pattern recognition capability of the designed artificial neural network is believed to provide an excellent paradigm for ultra-sensitive van der Waals materials to develop electric-modulated neuromorphic computation architectures., Developing efficient memory and artificial synaptic systems based on environmentally sensitive van der Waals materials remains a challenge. Here, the authors present a native oxidation-inspired InSe field-effect transistor that benefits from a boosted charge trapping behavior under ambient conditions.

The oxygen (O2)-dependent resistance change of multilayered molybdenum ditelluride (MoTe2) channels was characterized. A variation of the channel resistance could reproducibly determine relative O2...

Resin asphalt is widely used to improve the durability and thermal stability of asphalt concrete in recent years. In order to reduce the dependence of using petroleum asphalt in resin asphalt, the ...

Warm-mix asphalt (WMA) is one technology that has been found to have potential in minimizing the environmental harm caused by road construction activities. Its low mixing and compacting temperatures have opened great opportunities for more sustainable development. However, because WMA is mixed at low temperatures, the drying process of the aggregate may fail to dry the WMA completely. The binder-aggregate adhesion property can be damaged by moisture remaining from incomplete drying. The present study investigated the effects of aggregate moisture on the binder-aggregate interfacial characteristics of WMA by evaluating its surface free energy and adhesive bond strength. The results showed that for the Pen 60-70 binder type, the aggregate AG in general showed the higher bond energy and aggregate SD showed the lowest bond energy among three aggregate types. Also, the bond energy diminishes with increasing aggregate moisture contents but the percent drops in bond energy is less when WMA additives was included. For the PM binder, SL aggregate group showed the highest bond energy and SD aggregate group showed the lowest bond energy. For the work of adhesion, the results showed that with aggregate with 10% moisture contents has destructive effects on the work of adhesion which may decrease to 50% compare to dry aggregate condition. Finally, the four quadrant diagrams can be used to combine two distinct property of the bond energy and the work of adhesion as the hybrid performance indicator to rank the effect of moist aggregate to the adhesion properties at binder-aggregate interface.

This work was supported by the Taiwan Ministry of Science and Technology (Grant No. MOST 108-2112-M-005-012-MY3 and 109-2112-M-005-013-MY3), and also supported in part by the National Natural Science Foundation of China under Grant No. 61974070 and 61874074, 1311 Talent Plan, and Start-Up Fund from Nanjing University of Posts and Telecommunications under Grant No. NY219003, and Shenzhen Peacock Plan (Grant No. KQTD2016053112042971).

Two-dimensional (2D) materials are drawing growing attention for next-generation electronics and optoelectronics owing to its atomic thickness and unique physical properties. One of the challenges posed by 2D materials is the large source/drain (S/D) series resistance due to their thinness, which may be resolved by thickening the source and drain regions. Recently explored lateral graphene–MoS21−3 and graphene–WS21,4 heterostructures shed light on resolving the mentioned issues owing to their superior ohmic contact behaviors. However, recently reported field-effect transistors (FETs) based on graphene–TMD heterostructures have only shown n-type characteristics. The lack of p-type transistor limits their applications in complementary metal-oxide semiconductor electronics. In this work, we demonstrate p-type FETs based on graphene–WSe2 lateral heterojunctions grown with the scalable CVD technique. Few-layer WSe2 is overlapped with the multilayer graphene (MLG) at MLG–WSe2 junctions such that the contact res...

In the present study, we aim to help improve the design of van der Waals stacking, i.e., vertical 2D electronics, by probing charge transport differences in both parallel and vertical conducting channels of layered molybdenum disulfide (MoS2), with thin graphite acting as source and drain electrodes. To avoid systematic errors and variable contact contributions to the MoS2 channel, parallel and vertical electronics are all fabricated and measured on the same conducting material. Large differences in the on/off current ratio, mobility, and charge fluctuations, between parallel and vertical electronics are evident in electrical performance as well as in charge transport mechanisms. Further insights are drawn from a well-constrained analysis of both temperature-dependent current-voltage characteristics and low-frequency (LF) current fluctuations. This work offers significant insight into the fundamental understanding of charge transport and the development of future layered-materials-based integration technology.

Specification tests for thin surface treatment are mainly simulated or empirical; without considering fundamental mechanical or rheological properties of the material. Thus, it is difficult to incorporate the test results into mechanical-based pavement design analysis. A series of test methods, which quantify performance-related mechanical properties of thin surface treatment employed in pavement maintenance and pavement preservation is thus needed. The objective of this study is to investigate the performance-related mechanical properties of thin surface treatment materials for pavement maintenance and preservation. The Micro-Surfacing Mat and Precast Rubber Asphalt Mat were used in this study. The Finite Element Model result indicated that the Modified Leutner Shear Test adequate to evaluate the direct shear strength of the thin surface treatment. The results show that the sensitivity loading frequency and the temperature susceptibility of the Precast Rubber Asphalt Mat were reduced by Rubber Modified Asphalt content. The Precast Rubber Asphalt Mat has greater interfacial shear strength as well as shear stiffness compared to those of Micro-Surfacing Mat. The tack coat application rate is crucial for the interfacial shear strength of Precast Rubber Asphalt Mat. This research found that shear stress and the displacement rate are positively related to the interfacial shear strength and shear stiffness. The interfacial shear strength and shear stiffness are negatively related to testing temperature. The Micro-Surfacing Mat had higher dynamic direct shear modulus, lower loading frequency sensitivity, and better rutting resistance than Precast Rubber Asphalt Mat.

Currently, road and airport pavement construction uses approximately 90% asphalt, most of which is mainly derived from fossil fuels. However, with the improvement in oil refinery technology, the quality of asphalt binders is degrading gradually. Moreover, from the environment standpoint, fossil fuels are the main source of greenhouse gases, which lead to global warming. Consequently, there is an urgent need to develop a more sustainable binding material from renewable or other alternative resources to replace or modify the existing petroleum-based asphalt binder for the highway industry. The main objective of this study was to investigate the potential use of a bio-oil byproduct as a partial replacement for a bitumen-based binder. The properties of various blending combinations of a biobinder and asphalt binder were compared with those of an unmodified asphalt binder through several physical and rheological tests. The specific gravity of the biobinder was found to be higher than that of the petroleum-based binder. In general, biobinder blends have a higher viscosity than that of the unmodified binder at temperatures higher than 60 °C. Binders containing the biobinder at 25% and 50% have lower temperature susceptibility than that of the unmodified binder. Adding the biobinder at up to 25% does not significantly change the complex shear modulus of unaged binders, whereas rolling thin-film oven-aged biobinder blends show a higher complex modulus and greater viscosity than those of the unmodified binder. Moreover, the biobinder blends show higher G ∗ /sin δ, lower nonrecoverable compliance and greater recovery ability than those of conventional AC-20.

Frequent mill and overlay activities result in the production of a considerable amount of reclaimed asphalt pavement (RAP) materials. Many pavements that incorporated RAP exhibit a shorter service life than do those without RAP. One of the possible reasons is that certain RAP materials have already undergone multiple recycling processes during the past decade. This results in severe aging of the reclaimed asphalt binder (RAB). In this study, three severely aged RABs, two RAP blending scenarios, two virgin binders, and two commercial rejuvenators were used to investigate the feasibility of using severely aged binders for constructing pavements. The chemical and rheological properties of the rejuvenated severely aged binders were evaluated using high-performance gel permeation chromatography and a dynamic shear rheometer. The molecular size distributions of rejuvenated RABs revealed that the rejuvenators used in this study could rebalance the proportions of large, medium, and small molecular components among the rejuvenated RABs. However, the polydispersity values still enabled clearly distinguishing between virgin binders and rejuvenated RABs. Two performance parameters were used to evaluate the potential of age-induced damage as well as permanent rutting in the binders. A Glover–Rowe damage zone was evaluated, and it revealed promising results to distinguish among severely aged binders, virgin binders, and rejuvenated binders. Oscillation and multiple stress creep and recovery tests were performed to obtain rutting potential parameter G ∗ /sin( δ ) and J nr , respectively. The results indicated that all rejuvenated aged binders exhibited higher G ∗ /sin( δ ) values and lower J nr values compared with the control virgin binders.

The objective of this study was to fully characterize and validate the mechanical-based aging model parameters and compared with the chemical kinetic model. This study found that level of aging applied to both asphalt binder and asphalt concrete showed differences, as verified by all of the p-values from regression analysis test, were greater than 0.05. The aging variable value decreased with the aggregate involved. The aging history dependent (k2) could be simulated the actual aging behavior as a polynomial curve. The Pearson correlation test showed that there is a strong relationship between the carbonyl content and the aging model variable.

Modern technology allows us to mimic biological functions with artificial devices. The human brain, including numerous neural cells that connect via synapses, enables us to handle complex tasks with ultra-low power consumption, which is one of the most important biological components that eager to emulate. Here, we propose and build a simple indium selenide (InSe)-based photonic synaptic device with unique gate tunable behaviours such as time-varying output current, auto-depression rate, and paired-pulse facilitation (PPF). A new inverse PPF behaviour is observed, characterized by the positive correlations to the time interval, which is opposite of those negative ones in previous studies. To unveil the origin of this new finding, both the substrate-dependent persistent photocurrent examination and low-frequency noise (LFN) measurements are performed to investigate the electric-controlled charge trapping/detrapping processes between the InSe and SiO2 interface. Furthermore, we systematically demonstrate such the specific evolution of the flexible plasticity within a low-operation voltage and a wide range of visible spectra. Interestingly, the inverse PPF can be employed to emulate more detailed characteristics of a biological brain such as the age-related changes of synaptic plasticity in real human brains. Thus, we believed that our findings provide a proof-of-concept for systematically mimicking the brain plasticity and advancing the development of energy-efficient artificial brains.

Power dissipation is a crucial problem as the packing density of transistors increases in modern integrated circuits. Tunnel field-effect transistors (TFETs), which have high energy filtering provided by band-to-band tunneling (BTBT), have been proposed as an alternative electronics architecture to decrease the energy loss in bias operation and to achieve steep switching at room temperature. Very recently, the BTBT behavior has been demonstrated in van der Waals heterostructures by using unintentionally doped semiconductors. The reason of the BTBT formation is attributed to a significant band bending near the heterointerface, resulting in carrier accumulations. In this work, to investigate charge transport in type-III transistors, we adopted the same band-bending concept to fabricate van der Waals BP/MoS2 heterostructures. Through analyzing the temperature dependence of their electrical properties, we carefully ruled out the contribution of metal-semiconductor contact resistances and improved our understanding of carrier injection in 2D type-III transistors. The BP/MoS2 heterostructures showed both negative differential resistance and 1/f 2 current fluctuations, strongly demonstrating the BTBT operation. Finally, we also designed a TFET based on this heterostructure with an ionic liquid gate, and this TFET demonstrated an subthreshold slope can successfully surmount the thermal limit of 60 mV/decade. This work improves our understanding of charge transport in such layered heterostructures and helps to improve the energy efficiency of next-generation nanoscale electronics.

P-channel WSe 2 FETs along with multilayer graphene source/drain (S/D) are demonstrated by the CVD growth of the WSe 2 monolayer to the patterned graphene. Multilayer graphene (MLG) is adopted to reduce contact resistance while the monolayer WSe 2 served as the channel for the electrostatics integrity of the FET. Furthermore, by increasing the p-type doping concentration of the graphene S/D, the I on /I off ratio can be enhanced to 108 and the unipolar p-channel characteristics are retained regardless the choice of the work function of the metal used for the S/D contact.

This work reveals the intrinsic carrier transport behavior of 2D organolead halide perovskites based on phase-pure homologous (n = 1, 2, and 3) Ruddelsden-Popper perovskite (RPP) (BA)2 (MA)n-1 Pbn I3n+1 single crystals. The 2D perovskite field effect transistors with high-quality exfoliated 2D perovskite bulk crystals are fabricated, and characteristic output and transfer curves are measured from individual single-crystal flakes with various n values under different temperatures. Unipolar n-type transport dominated the electrical properties of all these 2D RPP single crystals. The transport behavior of the 2D organolead halide hybrid perovskites exhibits a strong dependence on the n value and the mobility substantially increases as the ratio of the number of inorganic perovskite slabs per organic spacer increases. By extracting the effect of contact resistances, the corrected mobility values for n = 1, 2, and 3 are 2 × 10-3 , 8.3 × 10-2 , and 1.25 cm2 V-1 s-1 at 77 K, respectively. Furthermore, by combining temperature-dependent electrical transport and optical measurements, it is found that the origin of the carrier mobility dependence on the phase transition for 2D organolead halide perovskites is very different from that of their 3D counterparts. Our findings offer insight into fundamental carrier transport behavior of 2D organic-inorganic hybrid perovskites based on phase-pure homologous single crystals.

Display Omitted The Ir-gate AlSb/InAs HEMT on Si substrate has been studied with reliability evaluation.The Ir-gate exhibited a superior metal work function.The Schottky barrier height of InAs/AlSb on silicon was improved.TEM, SIMS, and low frequency noise measurement were adopted to proof device stability. In this work, the 6-inch AlSb/InAs on Si (001) substrate is used to increase device integration and cost-effective purpose. The iridium (Ir)-gate was used for the InAs/AlSb on silicon substrate and temperature-dependent characteristics were also studied. The Ir-gate exhibited a superior metal work function which was beneficial for increasing the Schottky barrier height of InAs/AlSb on silicon heterostructures. Moreover, transmission electron microscopy, secondary ion mass spectrometry, and low frequency noise measurements were conducted to proof that the Ir-gated AlSb/InAs HEMT achieved the better stability of characteristics after self-heating and hot-carrier stresses.

A scanning light probe can locally dope two-dimensional molybdenum ditelluride, allowing monolithically integrated circuits (ICs) to be quickly written on the material.

Multifunctional devices are expected to allow development of low-cost, highly integrated, and energy-efficient electronics for the internet of things (IoT) era. Here, we demonstrate an all-two-dimensional ReSe2/h-BN/graphene heterostructure (ReSe2 HS) consisting of a vertically coupled ReSe2 field-effect transistor and charge storage component, which possesses multifunctional characteristics for use in electronics and optoelectronics. As an electrically controlled non-volatile memory (NVM), the ReSe2 HS delivers high-performance multilevel data storage with a readout on/off current ratio exceeding 105 and excellent durability (>104 s) at an ultralow Vds of 50 mV, which benefits to the development of power saving devices. The ReSe2 HS design and high-photoresponsivity ReSe2 channel also achieve an energy efficient optical NVM with full-visible-spectrum distinction. Besides, the ReSe2 HS displays unique ambipolarity to operate as either an inverter or frequency doubler. We further propose a power-free ReSe2 HS optical memory matrix to simplify imaging systems. The ReSe2 HS shows promise for use in light-programmable information storage systems and neuromorphic computation with low power consumption.

Electrical contacts often dominate charge transport properties at the nanoscale because of considerable differences in nanoelectronic device interfaces arising from unique geometric and electrostatic features. Transistors with a tunable Schottky barrier between the metal and semiconductor interface might simplify circuit design. Here, germanium nanowire (Ge NW) transistors with Cu3 Ge as source/drain contacts formed by both buffered oxide etching treatments and rapid thermal annealing are reported. The transistors based on this Cu3 Ge/Ge/Cu3 Ge heterostructure show ambipolar transistor behavior with a large on/off current ratio of more than 105 and 103 for the hole and electron regimes at room temperature, respectively. Investigations of temperature-dependent transport properties and low-frequency current fluctuations reveal that the tunable effective Schottky barriers of the Ge NW transistors accounted for the ambipolar behaviors. It is further shown that this ambipolarity can be used to realize binary-signal and data-storage functions, which greatly simplify circuit design compared with conventional technologies.

An all-inkjet-printed organic thin film transistor (OTFT) with a double-layer dielectric structure is proposed and implemented in this study. By using the double-layer structure with different dielectric materials (i.e., polyvinylphenol with poly(vinylidene fluoride-co-hexafluoropropylene)), the threshold-voltage of OTFT can be adjusted. The threshold-voltage shift can be controlled by changing the composition of dielectric layers. That is, an enhancement-mode OTFT can be converted to a depletion-mode OTFT by selectively printing additional dielectric layers to form a high-k/low-k double-layer structure. The printed OTFT has a carrier mobility of 5.0 × 10 − 3 cm 2 /V-s. The threshold-voltages of the OTFTs ranged between − 13 V and 10 V. This study demonstrates an additional design parameter for organic electronics manufactured using inkjet printing technology.

This study is aimed at evaluating the rate of long-term aging of WMA compared to conventional hot-mix-asphalt (HMA). A test section with recorded traffic and weather information was designated in this study. Field cores of two WMAs and one conventional HMA were taken from the field periodically. Both mix and binder properties of retrieved were measured in the laboratory. The resilient modulus and indirect tensile test were performed to characterize mixture properties. The rheological properties of extracted binder were measured by the dynamic shear rheometer (DSR) in order to obtain the complex shear modulus (G*) as well as the phase angle (δ) of binder with and without the WMA additives.

We describe the preparation of vinyl-terminated benzoxazine-functionalized graphene using free radical grafting. The resulting functionalized graphene (f-graphene) was incorporated into bis(3-allyl-3,4-dihydro-2H-1,3-benzoxazinyl)methane (V-BF-a) monomer in order that nanocomposites could be prepared. Results of scanning electron microscopy and transmission electron microscopy revealed that the sheets of f-graphene were well dispersed throughout the matrix, and there was a strong interfacial interaction between the f-graphene and polyV-BF-a. The inclusion of f-graphene into the nanocomposites resulted in a material with a high thermal stability and a low coefficient of thermal expansion (CTE); increasing the content of f-graphene reduced the CTE significantly more. A reduction in the CTE of up to 48% was produced by adding just 1 wt% of f-graphene; this corresponded to an increase of 12 °C in the glass transition temperature. These results suggest that f-graphene nanocomposites can be ‘tuned’ to give materials with both a low CTE and a high thermal stability, and that graphene composites of this type can thus be manufactured to withstand a wider range of temperatures.

This study, part of the NCHRP 9–45 Project, analyzed the effect of mineral filler properties on asphalt mastic and the rutting potential of asphaltic mixture. The mineral filler properties were characterized by four tests: Rigden voids (RV), fineness modulus (FM), calcium oxide (CaO) content, and methylene blue value. The rheological properties of asphalt binder and mastic were characterized with the use of apparent viscosity and multiple stress creep recovery tests. Dynamic modulus and flow number tests were conducted to examine the asphaltic mixture rutting potential. The tested mixtures included several variables: four asphalt binder types, including virgin and polymer modified; two aggregate gradations; and a selected group of fillers. The study concluded that asphalt mastic performance was significantly affected by the fractional voids in the filler and possibly by the CaO content and FM. This effect, however, depended on binder type. On the one hand, the styrene–butadiene–styrene modified binder showed the strongest effect as a result of the mineral filler inclusion when tested as mastic. On the other hand, RV and CaO content showed relatively greater correlation with the mixture rutting potential, as compared with other filler properties. Addition of RV improved the prediction models for dynamic modulus and flow number. The effect of RV on the mixture rutting potential was more pronounced for the coarse mixture than for the fine mixture.

This work describes amorphous fluorinated polymer films deposited by pulsed plasma polymerizations of octafluorotoluene (PPP‐OFT) monomers on ITO glass as the hole‐injection layer of organic electroluminescent (EL) devices, in order to study the influence of sample position and duty cycle on PPP‐OFT film characteristics, and also to find a good process to yield a higher retention degree of monomers and lower roughness of PPP‐OFT fluorocarbon films. Experimental results revealed that PPP‐OFT films deposited at positions far away from the RF coil and close to the monomer inlet showed less roughness than films deposited near the high RF‐flux regions. In addition, the retention of the monomers in the PPP‐OFT layer will be high if the deposition is conducted near the monomer inlet but some distance away from the RF electrode. Moreover, amorphous fluorinated polymer films can be deposited with higher fluorine to carbon (F/C) ratios and CF2 contents at proper substrate positions by means of different st...

To understand the behavior of hot-poured bituminous-based crack sealants at low service temperatures and to predict their field performance, a constitutive stress-strain relationship must be described. This would allow predicting in situ crack sealant response to both thermal and traffic loading. This paper verifies the linear viscoelastic behavior of crack sealants. Ten sealants having high polymer contents were tested at −4 to −40°C using a Crack Sealant Bending Beam Rheometer (CSBBR). The convolution integral principle was used to obtain relaxation moduli from measured creep compliance data. A Prony series viscoelastic model was used to characterize mechanical behavior of crack sealant at low temperatures. The sealant’s linear response was checked by implementing two conditions of linearity described by Marasteanu and Anderson. Simulation for the sealant linear viscoelastic deflection response during the loading and unloading was conducted using a three-dimensional finite-element model. This study conc...

Tunability and stability in the electrical properties of 2D semiconductors pave the way for their practical applications in logic devices. A robust layered indium selenide (InSe) field-effect transistor (FET) with superior controlled stability is demonstrated by depositing an indium (In) doping layer. The optimized InSe FETs deliver an unprecedented high electron mobility up to 3700 cm2 V-1 s-1 at room temperature, which can be retained with 60% after 1 month. Further insight into the evolution of the position of the Fermi level and the microscopic device structure with different In thicknesses demonstrates an enhanced electron-doping behavior at the In/InSe interface. Furthermore, the contact resistance is also improved through the In insertion between InSe and Au electrodes, which coincides with the analysis of the low-frequency noise. The carrier fluctuation is attributed to the dominance of the phonon scattering events, which agrees with the observation of the temperature-dependent mobility. Finally, the flexible functionalities of the logic-circuit applications, for instance, inverter and not-and (NAND)/not-or (NOR) gates, are determined with these surface-doping InSe FETs, which establish a paradigm for 2D-based materials to overcome the bottleneck in the development of electronic devices.

In this study, super-hydrophobic films were deposited in a one-step simple process by pulsed RF C6F6 plasma, and the influence of the duty-cycle (DC) on the surface structure and chemical characteristics of depositing fluorocarbon films was examined. The deposited coatings were analyzed by X-ray Photoelectron Spectroscopy (XPS), Fourier Transform Infrared Spectrometry (FTIR), Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), and Contact Angle Analyzer. It was found that by decreasing the DC from 1 to 0.1, the rough structure of the film with a lot of particles was obtained. In addition, the super-hydrophobic property was obtained on this composite fluorocarbon film. Finally, the adhesion of fluorocarbon films could be increased by deposited on the cotton fiber substrates instead of Si wafer.

Despite the possible benefits of implementing asphalt binder film thickness into current specifications to address durability problems, most of the related research has been theoretical and only a few attempts have been made to measure this property experimentally. The objective of this study was to investigate the concept of asphalt binder film thickness experimentally on the basis of measurements obtained by image analysis techniques, reflective light microscopy, and scanning electron microscopy. The results of the experimental program were used to gain insight into the concept of asphalt binder film thickness and its validity. Experimental results indicated that asphalt binder films coating large aggregates do not actually exist in hot-mix asphalt. Instead, what are referred to as asphalt binder films surrounding large aggregates are actually asphalt mastic films. These films are highly irregular in shape and have a thickness greater than 100 μm in the mixture considered in this study. The asphalt binder films in the mastic were observed at a thickness of 2 μm in the mixtures considered. However, these entities do not represent asphalt binder coatings around aggregates; they are only part of a blend with fine aggregates and mineral fillers. Microscopic analysis showed that air voids usually appear near the boundary between large aggregates and asphalt mastic.

Precisely controllable and reversible p/n-type electronic doping of molybdenum ditelluride (MoTe2 ) transistors is achieved by electrothermal doping (E-doping) processes. E-doping includes electrothermal annealing induced by an electric field in a vacuum chamber, which results in electron (n-type) doping and exposure to air, which induces hole (p-type) doping. The doping arises from the interaction between oxygen molecules or water vapor and defects of tellurium at the MoTe2 surface, and allows the accurate manipulation of p/n-type electrical doping of MoTe2 transistors. Because no dopant or special gas is used in the E-doping processes of MoTe2 , E-doping is a simple and efficient method. Moreover, through exact manipulation of p/n-type doping of MoTe2 transistors, quasi-complementary metal oxide semiconductor adaptive logic circuits, such as an inverter, not or gate, and not and gate, are successfully fabricated. The simple method, E-doping, adopted in obtaining p/n-type doping of MoTe2 transistors undoubtedly has provided an approach to create the electronic devices with desired performance.

Polypropylene (PP) films have been widely used in many industrial areas, such as for protective overcoats and food packaging. However, PP film’s hydrophobic surface properties induce poor wettability and adhesion; these properties have restrained the application of these films. Many surface modification techniques like wet-chemical treatment, UV irradiation, and plasma (including the atmospheric-pressure plasma, APP) treatment have been applied to films to enhance their hydrophilic properties. Among these technologies, APP treatment has attracted much attention due to its dry process, low vacuum equipment cost, and high productivity.

A novel plasma system based on double-pipe method was generated for the development of an atmospheric-pressure-plasma jet (APPJ). This APPJ deposits homogeneous thin films without unfavorable contamination in plasma source. The experimentally measured gas-phase temperature of the argon APPJ maintained at RF electric power was around 40degC-80degC, indicating this APPJ to be a low-temperature plasma. This plasma system will provide a chamber less deposition for coating application.