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Si3N4 ceramics and 304 stainless steel were joined by the Cu/Ag-Cu/Ti laminated filler metal. Interfacial microstructure of brazed joint and effect of brazing temperature and thickness of Cu foil on mechanical properties were studied in this paper. Research results showed that the interfacial microstructure of the brazed joint might be 304 stainless steel/TiFe2/Ag-Cu eutectic+Cu(s,s)/Cu(s,s)/Cu(s,s)+Ag-Cu eutectic/Cu3Ti+TiN/Si3N4 ceramics. With the increasing of the brazing temperature, four-point bending strength of the brazed joint initially increased, then decreased. The bending strength reached the maximum value of 53 MPa at 1153 K when the thickness of Cu foil was 500 μm. The bending strength reached the maximum value of 57 MPa with 1 mm thickness Cu interlayer under the brazing temperature of 1153 K.

Planar hybrid solar cells based on bulk GaAs wafers with a background doping density of 1016 cm−3 and poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) demonstrated an excellent power conversion efficiency of 8.99%. The efficiency of the cell was enhanced to 9.87% with a back-surface field feature using a molecular beam epitaxially grown n-type GaAs epi-layer. The efficiency and fill factor reach 11.86% and 0.8 when an additional p + GaAs epi-layer is deposited on the surface of the solar cells, which provides a front-surface field. The interface between the high- and low-doped regions in the polymer/GaAs and GaAs formed an electric field that introduced a barrier to minority carriers flow to the substrate and effectively reduced front surface carrier recombination, thereby enhancing light-generated free carrier collection efficiency and open-circuit voltage. Compared with the device without the front- and back-surface field, the fill factor and open-circuit voltage of the hybrid solar cell were improved from 0.76 to 0.8 and from 0.68 V to 0.77V, respectively. The highest efficiency reaches a record 13% when the Zonyl fluorosurfactant-treated PEDOT:PSS is used as a hole-transporting conducting layer for hybrid cells.

The room-temperature weak ferromagnetism of amorphous HfAlOx thin films deposited by pulsed laser deposition on various substrates in oxygen-defective ambient is demonstrated. The magnetization is independent of film thickness, but depends on substrates and deposition temperatures. A magnetic moment of similar to 0.26 mu(B) per HfAlOx f.u. is recorded for HfAlOx films deposited under optimized conditions [deposited at 600 degrees C on (001) sapphire in high vacuum]. It is argued that interfacial defects are one of the possible sources of the weak ferromagnetism. (c) 2006 American Institute of Physics.