1. Layout influence on microwave performance of graphene field effect transistors
- Author
-
Marco A. Giambra, Riccardo Pernice, M.H. Jang, Alfonso Carmelo Cino, Wolfram H. P. Pernice, Jong Hyun Ahn, E.F. Calandra, Antonio Benfante, L Zeiss, Salvatore Stivala, Vaidotas Miseikis, Romain Danneau, Alessandro Busacca, Giambra, M.A., Benfante, A., Zeiss, L., Pernice, R., Miseikis, V., Pernice, W.H.P., Jang, M.H., Ahn, J.-H., Cino, A.C., Stivala, S., Calandra, E., Busacca, A.C., and Danneau, R.
- Subjects
Technology ,Materials science ,02 engineering and technology ,Hardware_PERFORMANCEANDRELIABILITY ,Settore ING-INF/01 - Elettronica ,01 natural sciences ,law.invention ,Computer Science::Hardware Architecture ,Computer Science::Emerging Technologies ,law ,0103 physical sciences ,Hardware_INTEGRATEDCIRCUITS ,Electrical and Electronic Engineering ,Scaling ,010302 applied physics ,business.industry ,Graphene ,ComputerSystemsOrganization_COMPUTER-COMMUNICATIONNETWORKS ,Wide-bandgap semiconductor ,Settore ING-INF/02 - Campi Elettromagnetici ,021001 nanoscience & nanotechnology ,Graphene field effect transistors ,Sapphire substrate ,Optoelectronics ,Field-effect transistor ,0210 nano-technology ,Constant (mathematics) ,business ,Microwave ,ddc:600 ,Hardware_LOGICDESIGN - Abstract
The authors report on an in-depth statistical and parametrical investigation on the microwave performance of graphene FETs on sapphire substrate. The devices differ for the gate-drain/source distance and for the gate length, having kept instead the gate width constant. Microwave S -parameters have been measured for the different devices. Their results demonstrate that the cut-off frequency does not monotonically increase with the scaling of the device geometry and that it exists an optimal region in the gate-drain/source and gate-length space which maximises the microwave performance.
- Published
- 2018