1. The specificity intrinsic luminescence of a CsI crystal under the influence of low-temperature elastic deformation
- Author
-
K. Shunkeyev, L. Myasnikova, A. Maratova, N. Zhanturina, and Sh. Sagimbayeva
- Subjects
Crystal ,Condensed Matter::Materials Science ,Nuclear and High Energy Physics ,Materials science ,Exciton ,Relaxation (NMR) ,Radiative transfer ,Rectangular potential barrier ,Luminescence ,Spectroscopy ,Instrumentation ,Molecular physics ,Ionizing radiation - Abstract
The features of radiative relaxation of self-trapped excitons (STEs) in CsI crystals under lowering of the lattice symmetry by low-temperature (83 K) uniaxial elastic deformation (e = 0.5–0.7 %) are studied using the methods of luminescence spectroscopy. The sensitivity of intrinsic luminescence (peaked at 4.27 eV and 3.67 eV) to elastic deformation and ionizing radiation is detected. It is determined that the luminescence enhancement in elastically deformed CsI crystals is caused by the enhancement of 3.67 eV luminescence related to the STEs with an asymmetric configuration (weak off-center), while the 4.27 eV luminescence ascriebed to the STEs with a symmetric configuration (on-center) becomes suppressed. The study of the luminescence temperature dependence in CsI exposed to elastic deformation allowed us to determine the potential barrier Δ2 = 8 meV between the radiative states of the on– and weak off-center configurations of STEs.
- Published
- 2021