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The diffusion of stubborn oils and organic pigments has become a severe environmental pollution problem. Promisingly, the combination of superhydrophobicity and photocatalysis is expected to provide an efficient, economical and simple solution. In this paper, a kind of superhydrophobic and super-lipophilicity polyurethane (PU)-based sponge was reported by a strategy of undergoing ferric tetroxide loading (Fe3O4@PU), polydopamine fixation (PDA-Fe3O4@PU), octadecylamine grafting (ODA-Fe3O4@PU) and molybdenum disulfide loading (MoS2-ODA-Fe3O4@PU) successively. The results show that the MoS2-ODA-Fe3O4@PU sponge exhibits outstanding superhydrophobicity (with maximum water contact angle of 161.64°), excellent oil absorption capacity (60–109 wt/wt), robust stability in extreme environments and great oil/water separation ability. In addition, the MoS2-loaded sponge demonstrates desirable outcomes in decomposing methyl orange and methylene blue under light source, and a dual-functional purification system with a heterogeneous polyurethane-based sponge (the upper part is MoS2-ODA-Fe3O4@PU and the bottom part is MoS2@PU) endowed with superhydrophobicity and photocatalysis can purify water by separating oils and decomposing methylene blue simultaneously.

Transition metal phosphides have tremendous potential in the fields of eletrocatalysis and energy storage due to their excellent conductivity and high theoretical specific capacity. In this work, we prepared the composites of NiCoP and carbon nanotubes (CNTs) by one-pot method, and their lithium storage and electrocatalytic hydrogen evolution performance were studied. The experimental results indicated that as an anode material for lithium ion batteries (LIBs), the specific capacity of NiCoP/CNTs composites reaches 200 mA h g−1 after 200 cycles at 0.1 A g−1. The one-pot method can disperse CNTs inside and between the particles of the NiCoP, which can effectively promote the conductivity of the composites and increase the activity of internal materials. In addition, NiCoP/CNTs also showed good electrocatalytic hydrogen evolution reaction (HER) performance in acidic electrolyte. When the current density was 10 mA cm−2, the overpotential was 267 mV and the Tafel slope was 87.54 mV dec−1. Compared with pure NiCoP, the good electrochemical performance of NiCoP/CNTs results from the close contact between CNTs and NiCoP, which increases the conductivity and active area of the material. Therefore, the one-pot method for preparing CNTs composites can be used to enhance the electrochemical properties of inorganic nanomaterials. It provides a feasible solution for the modification of electrode materials.

Three-dimensional porous sponge has been demonstrated as an outstanding candidate in oil/water separation due to its hydrophobicity and oleophilicity that originates from the synergistic effect of rough structure and low surface energy, but the separation process has not been illuminated clearly. This paper presents the study of the synthesis of oil/water separation sponge, mechanism of separation process and establishment of kinetic model, via the combination among dopamine chemistry, covalent modification, theoretical analysis, experimental results and mathematical model. Results show that both the dopamine deposition time and the octadecyltrimethoxysilane hydrolysis system significantly affect the hydrophobicity of the modified-melamine sponge and that the oil/water separation process is composed of six scenarios with different physical state. Furthermore, with the experimental results, established iso-potential separation model and the height-quantized model, we conclude that the time-dependent separation patterns and kinetics are subjected to the modulation of the viscosity of the separated substance and the immersion depth of the sponge.

Photodetectors based on the AlGaN/GaN heterostructure suffer from persistent photoconductivity (PPC) in which recovery from the optical stimulus can take days. This behavior is unsuitable for many applications where reliable and consistent optical response is required. This letter presents a method for suppressing PPC in AlGaN/GaN photodetectors by employing device suspension and in situ heating. The highly conductive two-dimensional electron gas (2DEG) at the interface of AlGaN and GaN serves as both a sensor and a heater (via Joule heating). Microfabricated AlGaN/GaN-on-Si ultraviolet (UV) photodetectors (suspended and unsuspended) were exposed to UV (365 nm) for 60 s and the transient responses were measured under various in situ heating conditions. The measured transient response showed a decay time of ~39 h when the photodetector was not heated and 24 s for a suspended photodetector with in situ 2DEG heating (270°C with a power of 75 mW). This remarkable suppression of the PPC in AlGaN/GaN UV photodetectors can be attributed to the novel device architecture and in situ heating capability, which enables acceleration of the carrier capture rate during operation.

Studying the reaction mechanism of materials in the process of lithiation/delithiation is important to understand and optimize the electrode materials. In this work, the petal-like CoSe is prepared by a simple hydrothermal method, and its lithium storage mechanism is studied. During the charge/discharge cycles, the capacity of the CoSe decreases first and then increases. In the initial stage, the volume of CoSe expands due to the intercalation of lithium ions, which results in the amorphousness of CoSe and reduces the specific capacity. The subsequent increase in capacity is due to the recrystallization of the material and the formation of a conductive SEI film. The petal-like CoSe displays a specific capacity of 450 mA h g−1 at the current density of 100 mA g−1 after 300 cycles. To improve the lithium storage performance, a CoSe/rGO composite is prepared. The addition of GO during the preparation of CoSe changes the morphology of CoSe from a larger petal shape to a smaller rod shape, which weakens the effect of volume change during lithium ion intercalation and shortens the lithium ion diffusion distance, so improves the reduction of specific capacity. At a current density of 100 mA g−1, the specific capacity of CoSe/rGO composite can be as high as 730 mA h g−1 after 200 cycles. Even under a large current density of 1000 mA g−1, the specific capacity of the CoSe/rGO composite can still reach 570 mA h g−1 after 1000 cycles.

A microscale soot-particulate sensor using interdigitated platinum-gallium nitride (Pt-GaN) Schottky interfaces was developed to monitor fine soot particles within high-temperature environments (e.g., combustion exhausts and flues). Upon exposure to soot particles (30 to 50 nm in diameter) from an experimental chimney, an increased current (∼43.6%) is observed through the back-to-back Schottky contact to n-type GaN. This is attributed to a reduction in the effective Schottky barrier height (SBH) of ∼10 meV due to the electric field from the charged soot particles in the depletion region and exposed GaN surface. Furthermore, the microfabricated sensor was shown to recover sensitivity and regenerate the sensing response (∼11 meV SBH reduction) after exposure to temperature as high as 550 °C. This study supports the feasibility of a simple and reliable soot sensor to meet the increasing market demand for particulate matter sensing in harsh environments.

In this paper, the electron mobility and sheet density of the two-dimensional electron gas (2DEG) in both air and argon environments at 600 °C were measured intermittently over a 5 h duration using unpassivated and Al2O3-passivated AlGaN/GaN (with 3 nm GaN cap) van der Pauw test structures. The unpassivated AlGaN/GaN heterostructures annealed in air showed the smallest decrease (∼8%) in 2DEG electron mobility while Al2O3-passivated samples annealed in argon displayed the largest drop (∼70%) based on the Hall measurements. Photoluminescence and atomic force microscopy showed that minimal strain relaxation and surface roughness changes have occurred in the unpassivated samples annealed in air, while those with Al2O3 passivation annealed in argon showed significant microstructural degradations. This suggests that cracks developed in the samples annealed in air were healed by oxidation reactions. To further confirm this, Auger electron spectroscopy was conducted on the unpassivated samples after the anneal in...

The development of radiation-hardened, temperature-tolerant materials, sensors and electronics will enable lightweight space sub-systems (reduced packaging requirements) with increased operation lifetimes in extreme harsh environments such as those encountered during space exploration. Gallium nitride (GaN) is a ceramic, semiconductor material stable within high-radiation, high-temperature and chemically corrosive environments due to its wide bandgap (3.4 eV). These material properties can be leveraged for ultraviolet (UV) wavelength photodetection. In this paper, current results of GaN metal-semiconductor-metal (MSM) UV photodetectors behavior after irradiation up to 50 krad and temperatures of 15°C to 150°C is presented. These initial results indicate that GaN-based sensors can provide robust operation within extreme harsh environments. Future directions for GaN-based photodetector technology for down-hole, automotive and space exploration applications are also discussed.

This paper reports the steady-state and transient temperature response of AlGaN/GaN high electron mobility transistor (HEMT) based structures. In this study, three localized heating schemes, namely, continuous self-heating, pulsed self-heating and heating with on-chip heaters are studied for sensor applications that require controlled heating profiles. Two scenarios were considered for the GaN sensor structure: 1) the silicon substrate under the AlGaN/GaN sensor is not removed, and 2) the silicon substrate is removed to form a suspended AlGaN/GaN diaphragm on which the sensor is located. The three heating schemes are analyzed by finite element thermal analysis, evaluated and compared. In addition, general guidelines for designing localized heating architectures for AlGaN/GaN HEMT based sensors are provided.

New milestones in space exploration can be realized through the development of radiation-hardened, temperature-tolerant materials, sensors and electronics. This enables lightweight systems (reduced packaging requirements) with increased operation lifetimes. Gallium nitride (GaN) is a ceramic, semiconductor material that is stable within high-radiation, high-temperature and chemically corrosive environments. Recently, this material platform has been utilized to realize sensors and electronics for operation under extreme harsh conditions. These devices exploit the two-dimensional electron gas (2DEG) formed at the interface between AlGaN/GaN heterostructures, which is used as the material platform in high electron mobility transistors (HEMTs). In this paper, a review of the advancements in GaN manufacturing technology such as the growth of epitaxially deposited thin films, micromachining techniques and high-temperature metallization is presented. In addition, the compelling results of fabricating and operating micro-scale GaNbased sensors within radiation environments and at elevated temperatures are shown. The paper will close with future directions GaN-based microsystems technology for down-hole, propulsion and space exploration applications.

The high-temperature characteristics (at 600 °C) of Ti/Al/Pt/Au multilayer contacts to gallium nitride (GaN) in air are reported. Microfabricated circular-transfer-line-method test structures were subject to 10 h of thermal storage at 600 °C. Intermittent electrical characterization during thermal storage showed minimal variation in the contact resistance after 2 h and that the specific contact resistivity remained on the order of 10−5 Ω-cm2. In addition, the thermally stored multilayer contacts to GaN showed ohmic I-V characteristics when electrically probed at 600 °C. The microstructural analysis with atomic force microscopy showed minimal changes in surface roughness after thermal storage. Observations of the thermochemical reactions after thermal storage using Auger electron spectroscopy chemical depth profiling showed diffusion of Pt and minimal additional Al oxidation. The results support the use of Ti/Al/Pt/Au multilayer metallization for GaN-based sensors and electronic devices that will operate within a high-temperature and oxidizing ambient.