1. High thermoelectric performance in low-cost SnS0.91Se0.09crystals
- Author
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Wenke He, Dongyang Wang, Haijun Wu, Yu Xiao, Yang Zhang, Dongsheng He, Yue Feng, Yu-Jie Hao, Jin-Feng Dong, Raju Chetty, Lijie Hao, Dongfeng Chen, Jianfei Qin, Qiang Yang, Xin Li, Jian-Ming Song, Yingcai Zhu, Wei Xu, Changlei Niu, Guangtao Wang, Chang Liu, Michihiro Ohta, Stephen J. Pennycook, Jiaqing He, Jing-Feng Li, and Li-Dong Zhao
- Subjects
Electron mobility ,Multidisciplinary ,Materials science ,Thermoelectric cooling ,Effective mass (solid-state physics) ,Thermal conductivity ,business.industry ,Thermoelectric effect ,Figure of merit ,Optoelectronics ,Power factor ,Thermoelectric materials ,business - Abstract
Thermoelectric technology allows conversion between heat and electricity. Many good thermoelectric materials contain rare or toxic elements, so developing low-cost and high-performance thermoelectric materials is warranted. Here, we report the temperature-dependent interplay of three separate electronic bands in hole-doped tin sulfide (SnS) crystals. This behavior leads to synergistic optimization between effective mass (m*) and carrier mobility (μ) and can be boosted through introducing selenium (Se). This enhanced the power factor from ~30 to ~53 microwatts per centimeter per square kelvin (μW cm−1 K−2 at 300 K), while lowering the thermal conductivity after Se alloying. As a result, we obtained a maximum figure of merit ZT (ZTmax) of ~1.6 at 873 K and an average ZT (ZTave) of ~1.25 at 300 to 873 K in SnS0.91Se0.09 crystals. Our strategy for band manipulation offers a different route for optimizing thermoelectric performance. The high-performance SnS crystals represent an important step toward low-cost, Earth-abundant, and environmentally friendly thermoelectrics.
- Published
- 2019