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The Gd2O3 layer grown by electron beam evaporation system normally leads to oxygen deficient sites unless the oxygen partial pressure is provided. These oxygen vacancies were monitored through their current modulating effect. This modulation controlled the current within a Si well of the Gd2O3/Si/Gd2O3 quantum well structure through the migration of the oxygen vacancies. Such behavior were not found in the structure that contains far less oxygen vacancy such as SiO2/Si/SiO2 structure.

Phosphosilicate ceramic was doped with Tb 3+ using sol-gel technique to prepare thin films. The films were prepared by spin coating the phosphosilicate sols on SiO x /indium-tin-oxide/glass substrates. The photocurrent of the films at 355 nm laser excitation was observed. The photoresponse as a function of applied field and laser energy was linear and showed no sign of saturation. The films exhibited very stable photoresponse under a very high number of laser shots.

A transducer compressible in response to electric power, including a flexible, conductive plastic layer microimprinted with a pattern and a stiff plastic layer containing a conductive embedded sheet.