Vincent Barrioz, Christophe Labbé, Guillaume Zoppi, Stephen A. Campbell, Yongtao Qu, Pietro Maiello, Jonathan D. Major, Delphine Lagarde, Neil Beattie, Department of Mathematics, Physics and Electrical Engineering [Newcastle], University of Northumbria at Newcastle [United Kingdom], Stephenson Institute for Renewable Energy, University of Liverpool, Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA), Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Centre National de la Recherche Scientifique (CNRS)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Caen Normandie (UNICAEN), Normandie Université (NU), Nanomatériaux, Ions et Métamatériaux pour la Photonique (NIMPH), Normandie Université (NU)-Centre National de la Recherche Scientifique (CNRS)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), and Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université de Caen Normandie (UNICAEN)
International audience; Kesterite solar cells based on chalcogenide Cu2ZnSn(S,Se)4 (CZTSSe) are a viable approach to thin film photovoltaics, utilising Earth-abundant, non-toxic elements. CZTSSe films produced from nanoparticle inks offer a cost-effective solution-based method of fabrication. However, improving efficiency in these devices has proved challenging, in part due to the presence of detrimental complex defects within the bulk of the CZTSSe absorber. In this study, the behaviour of nanoparticle-based CZTSSe absorbers and solar cells made from relatively low and high quality grade chemicals is investigated with a view to improving cost-effectiveness of the ink-based fabrication process. Photoluminescence spectroscopy revealed the presence of similar shallow acceptor plus shallow donor states in both low and high purity precursor absorbers. We demonstrate a relationship between the average depth of energy band-edge potential fluctuations and absorber quality where the higher grade chemical precursor-based absorber outperforms the lower purity version. In addition, the low purity precursor absorber had a higher total defect density resulting in a 10 meV increase in the average electrostatic potential fluctuations. Deep level transient spectroscopy in solar devices indicated the presence of detrimental deep defect states in both types of absorber. Notwithstanding the high purity precursor absorber with lower defect density, the power conversion efficiencies of both types of CZTSSe solar cells were similar (~5%), implying an issue other than defects in the absorber bulk inhibits device performance as evidenced by quantum efficiency analysis and current–voltage measurements.