1. Angstrom-Resolved Interfacial Structure in Buried Organic-Inorganic Junctions
- Author
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Sasawat Jamnuch, Dennis Nordlund, Richard J. Saykally, Walter S. Drisdell, Michael Zuerch, R. Mincigrucci, Tod A. Pascal, Sumana L. Raj, Laura Foglia, Chaitanya Das Pemmaraju, Craig P. Schwartz, C. J. Hull, Emiliano Principi, Claudio Masciovecchio, Can Berk Uzundal, Luca Poletto, Royce K. Lam, Paolo Miotti, A. Simoncig, Marcello Coreno, and Luca Giannessi
- Subjects
General Physics ,Materials science ,Absorption spectroscopy ,General Physics and Astronomy ,Second-harmonic generation ,02 engineering and technology ,Electronic structure ,021001 nanoscience & nanotechnology ,01 natural sciences ,Molecular physics ,Mathematical Sciences ,Engineering ,Physical Sciences ,0103 physical sciences ,Organic inorganic ,Angstrom ,010306 general physics ,0210 nano-technology - Abstract
Charge transport processes at interfaces play a crucial role in many processes. Here, the first soft x-ray second harmonic generation (SXR SHG) interfacial spectrum of a buried interface (boron-Parylene N) is reported. SXR SHG shows distinct spectral features that are not observed in x-ray absorption spectra, demonstrating its extraordinary interfacial sensitivity. Comparison to electronic structure calculations indicates a boron-organic separation distance of 1.9Å, with changes of less than 1Å resulting in easily detectable SXR SHG spectral shifts (ca. hundreds of milli-electron volts).
- Published
- 2021