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Josephson junctions (JJs) with non-hysteretic I-V characteristic and high critical parameters are required for many applications; in particular, they are needed to create tunable THz range oscillators. We fabricated and studied shunted superconductor-insulator-superconductor (SIS) Nb-AlOx-Nb tunnel junctions with an area of about 1m2, estimated their parameters, and compared them with theoretical models. To assess the performance of shunted junctions in the terahertz range, their characteristics were studied under the influence of a high-frequency signal; the estimated value of the characteristic voltage for the shunted junction at a high frequency is about 1 mV. To improve the circuit parameters, a new type of the shunting based on application of NIS junctions was proposed, which reduces the influence of parasitic inductance, expands the frequency range of the generator, and decreases the size of the structure. The JJs with a new type of shunting have been fabricated and studied. The niobium integrated circuits intended for matching the superconducting oscillator and an SIS junction as a microwave detector were designed, fabricated, and tested. Such structures are required for studying the spectral characteristics and analyzing the operation of the oscillator. The developed circuits have demonstrated efficient operation at frequencies from 300 to 700 GHz; the experimental results are in good agreement with the simulated characteristics. The results obtained will be implemented for further development of the THz range oscillators.

We study mechanisms of absorption in two essentially different types of superconductor-insulator-normal metal-insulator-superconductor (SINIS) bolometers with absorber directly placed on Si wafer and with absorber suspended above the substrate. The figure of merit for quantum photon absorption is quantum efficiency equal to the number of detected electrons for one photon. The efficiency of absorption is dramatically dependent on phonon losses to substrate and electrodes, and electron energy losses to electrodes through tunnel junctions. The maximum quantum efficiency can approach n = hf/kT = 160 at f = 350 GHz T = 0.1 K, and current responsivity d I /d P = e/kT in quantum gain bolometer case, contrary to photon counter mode with quantum efficiency of n = 1 and responsivity d I /d P = e/hf . In experiments, we approach intrinsic quantum efficiency up to n = 80 electrons per photon in bolometer with suspended absorber, contrary to quantum efficiency of about one for absorber on the substrate. In the case of suspended Cu and Pd absorber, Kapitsa resistance protect from power leak to Al electrodes.

A bolometer, which is based on a superconductor–insulator–normal metal–insulator–superconductor (SINIS) structure, integrated into a twin-slot antenna with a central frequency of 90 GHz, and connected with a superconducting microwave readout resonator, has been designed, fabricated, and experimentally studied. Such an elementary cell is designed for the multi-element array of a high-sensitive radioastronomic receiver, in which the readout from a great number of channels is performed by a single coaxial cable instead of separate wires and amplifier in each channel.

Bolometers based on the superconductor–insulator–normal-metal–insulator–superconductor (SINIS) structure with an absorber suspended above the substrate are developed, fabricated, and experimentally studied in the terahertz frequency range. In contrast to the previously studied bolometers with an absorber located directly on the substrate, the real bolometric mode of operation is achieved, i.e., there is more than one excited electron per quantum of electromagnetic radiation (the quantum efficiency is larger than 1). A quantum efficiency of fifteen electrons per quantum of radiation with a frequency of 350 GHz was achieved in the studied bolometers.

Two types arrays of annular half-wave and electrically small antennas with typical sizes of the elements corresponding to 1/10 of the wavelength at SubTHz band with integrated superconductor–insulator–normal metal–insulator–superconductor (SINIS) bolometers have been developed, fabricated and experimentally studied. We performed numerical modeling of the full structure and use additional reference channels in experimental studies to enhance the accuracy of the spectral response estimations of receiving arrays. In experiments three reference channels were used for normalization of the spectral response: a pyroelectric detector outside the cryostat, and two cold channels—a RuO2 bolometer and on-chip thermometer comprising series array of NIS-junctions.

—Arrays of planar annular antennas in the 345 GHz range with integrated superconductor–insulator–normal metal–insulator–superconductor (SINIS) bolometers have been developed, fabricated, and experimentally investigated. To increase the absorption efficiency, the source signal was matched with the array using a back-to-back horn and a counter-reflector. The efficiency of the receiving structure was studied depending on the direction of irradiation—through the substrate and from the antenna—as well as on the thickness of the substrate. The methods for normalizing a received signal using a reference channel outside and inside a cryostat is described. The best results were obtained by irradiating the array from the antenna with a substrate thickness equivalent to a quarter wavelength in the dielectric and sputtering of the rear side with a gold film (counterreflector). The effective matching band in the main range was more than 50 GHz; the volt–watt sensitivity reaches 109 V/W.

Samples of superconductor–insulator–superconductor (SIS) and normal metal–insulator–superconductor (NIS) junctions with superconducting aluminum of different thickness were fabricated and experimentally studied, starting from conventional shadow evaporation with a suspended resist bridge. We also developed alternative fabrication by magnetron sputtering with two-step direct e-beam patterning. We compared Al film grain size, surface roughness, resistivity deposited by thermal evaporation and magnetron sputtering. The best-quality NIS junctions with large superconducting electrodes approached a resistance R(0)/R(V2Δ) factor ratio of 1000 at 0.3 K and over 10,000 at 0.1 K. At 0.1 K, R(0) was determined completely by the Andreev current. The contribution of the single-electron current dominated at V > VΔ/2. The single-electron resistance extrapolated to V = 0 exceeded the resistance R(V2Δ) by 3 × 109. We measured the influence of the magnetic field on NIS junctions and described the mechanism of additional conductivity due to induced Abrikosov vortices. The modified shape of the SINIS bolometer IV curve was explained by Joule overheating via NIN (normal metal–insulator–normal metal) channels.

Mixers based on superconductor–insulator–superconductor (SIS) tunnel junctions are the best input devices at frequencies from 0.1 to 1.2 THz. This is explained by both the extremely high nonlinearity of such elements and their extremely low intrinsic noise. Submicron tunnel junctions are necessary to realize the ultimate parameters of SIS receivers, which are used as standard devices on both ground and space radio telescopes around the world. The technology for manufacturing submicron Nb–AlN–NbN tunnel junctions using electron-beam lithography was developed and optimized. This article presents the results on the selection of the exposure dose, development time, and plasma chemical etching parameters to obtain high-quality junctions (the ratio of the resistances below and above the gap Rj/Rn). The use of a negative-resist ma-N 2400 with lower sensitivity and better contrast in comparison with a negative-resist UVN 2300-0.5 improved the reproducibility of the structure fabrication process. Submicron (area from 2.0 to 0.2 µm2) Nb–AlN–NbN tunnel junctions with high current densities and quality parameters Rj/Rn > 15 were fabricated. The spread of parameters of submicron tunnel structures across the substrate and the reproducibility of the cycle-to-cycle process of tunnel structure fabrication were measured.

Microwave detectors of the Metal-Insulator-Metal-Insulator-Metal (MIMIM) structure and the Superconductor-Insulator-Metal-Insulator-Superconductor (SIMIS) structure have been designed, fabricated and investigated. The difference of such samples was in external electrodes, MIMIM uses copper external electrodes, while SIMIS uses aluminum. Identical in dimensions MIMIM and SIMIS samples have been fabricated and experimentally studied in the temperature range of 0.1–2.7 K. Voltage and current response were measured at 300 GHz external irradiation using Backward Wave Oscillator (BWO). According to our estimates, the MIMIM current responsivity is 1.1·103 A/W in the case of a photon response and 4·104 A/W in the case of a bolometric response. The estimated noise equivalent power is in the range 2.5·10 18 W/ √ Hz to 1.2·10−19 W/√Hz.

Integrated quasi-optical cryogenic terahertz receivers contain arrays of detectors, quasi-optical filters, interferometers, and other metamaterials. Matrices of quasi-optical band-pass, low-pass, and high-pass filters, Fabry–Perot grid interferometers, and arrays of half-wave and electrically small antennas with superconductor-insulator-normal metal-insulator-superconductor (SINIS) sub-terahertz wavelength range detectors were fabricated and experimentally studied on the same computational, technological, and experimental platform. For the design of the filters, we used the periodic frequency-selective surfaces (FSS) approach, contrary to detector arrays that can be presented in a model of distributed absorbers. The structures were fabricated using direct electron beam lithography, thermal shadow evaporation, lift-off, alternatively magnetron sputtering, and chemical and plasma etching. The numerical simulation methods of such structures are sufficiently different: for the reactive matrices with low losses, the approximation of an infinite structure with periodic boundary conditions is applicable, and for the arrays of detectors with dissipative elements of absorbers, a complete analysis of the finite structure with hundreds of interacting ports is applicable. The difference is determined by the presence of dissipation in the detector arrays, the phase of the reflected or re-emitted signal turned out to be undefined and the Floquet periodic boundary conditions are correct only for a phased array antenna. The spectral characteristics of the created filters, interferometers, and antenna arrays were measured in the frequency range 50–600 GHz.

We fabricated and experimentally studied a wideband metamaterial comprising a 2D array of annular antennas with Superconductor-Insulator-Normal metal-Insulator-Superconductor (SINIS) bolometers. The annular antenna array metamaterial was designed for a frequency range of 300–450 GHz and consists of periodically arranged electrically small rings, each containing two or four SINIS bolometers connected in series or parallel. These periodic structures with a unit cell size of about one-tenth of a wavelength act as a distributed absorber and receive two orthogonal polarizations. The unit’s small cell size provides a higher density of bolometers and therefore increases the bandwidth and the dynamic range of a single pixel. Theoretical estimates at a central frequency of 345 GHz yield absorption efficiencies of over 80% of the incident RF power within the 300–450 GHz frequency range. The average absorption by the metamaterial matrix in the given frequency band is at least twice as high in comparison to the half-wave circle matrix. We measured the optical response at sample temperatures as low as 100 mK using a quasi-optical setup that consisted of an immersion sapphire lens, bandpass mesh filters, and a variable temperature cryogenic blackbody radiation source. The measured series array voltage responsivity was 1.3 × 109 V/W for radiation temperatures ranging from 2 K to 7.5 K. The current responsivity for the parallel array was 2.4 × 104 A/W at a bath temperature of 100 mK. The spectral response was measured in a 240–370 GHz range with a Backward Wave Oscillator radiation source. The measured equivalent temperature sensitivity could be reduced to 100 μK/Hz1/2 at a 2.7 K radiation temperature level, a value that is suitable for anisotropy measurements in cosmic microwave background radiation.