1. Nanoporous Dielectric Resistive Memories Using Sequential Infiltration Synthesis
- Author
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Ilke Arslan, Bhaswar Chakrabarti, Suman Datta, A. Khanna, Leonidas E. Ocola, Henry Chan, Benjamin Grisafe, Daniel Rosenmann, Aditya Koneru, Thomas E. Gage, Khan Alam, Supratik Guha, Subramanian K. R. S. Sankaranarayan, Toby Sanders, and Ralu Divan
- Subjects
Resistive touchscreen ,Materials science ,Nanoporous ,business.industry ,General Engineering ,General Physics and Astronomy ,02 engineering and technology ,Dielectric ,010402 general chemistry ,021001 nanoscience & nanotechnology ,01 natural sciences ,0104 chemical sciences ,Resistive random-access memory ,Non-volatile memory ,Infiltration (hydrology) ,Neuromorphic engineering ,Optoelectronics ,General Materials Science ,0210 nano-technology ,business - Abstract
Resistance switching in metal-insulator-metal structures has been extensively studied in recent years for use as synaptic elements for neuromorphic computing and as nonvolatile memory elements. However, high switching power requirements, device variabilities, and considerable trade-offs between low operating voltages, high on/off ratios, and low leakage have limited their utility. In this work, we have addressed these issues by demonstrating the use of ultraporous dielectrics as a pathway for high-performance resistive memory devices. Using a modified atomic layer deposition based technique known as sequential infiltration synthesis, which was developed originally for improving polymer properties such as enhanced etch resistance of electron-beam resists and for the creation of films for filtration and oleophilic applications, we are able to create ∼15 nm thick ultraporous (pore size ∼5 nm) oxide dielectrics with up to 73% porosity as the medium for filament formation. We show, using the Ag/Al
- Published
- 2021