Author: "A. Debelle" / Topic: materials science - Searchworks@Jio Institute Digital Library Search Results

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1. Strain and damage build-up in irradiated crystals: Coupling X-ray diffraction with numerical simulations

Author: Thomas Jourdan, Alain Chartier, Alexandre Boulle, S. Pellegrino, Aurélien Debelle, Jean-Paul Crocombette, IRCER - Axe 3 : organisation structurale multiéchelle des matériaux (IRCER-AXE3), Institut de Recherche sur les CERamiques (IRCER), Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Service de la Corrosion et du Comportement des Matériaux dans leur Environnement (SCCME), Département de Physico-Chimie (DPC), CEA-Direction des Energies (ex-Direction de l'Energie Nucléaire) (CEA-DES (ex-DEN)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-CEA-Direction des Energies (ex-Direction de l'Energie Nucléaire) (CEA-DES (ex-DEN)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay, Service de recherches de métallurgie physique (SRMP), Département des Matériaux pour le Nucléaire (DMN), Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM), and Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Diffraction, Nuclear and High Energy Physics, Materials science, business.industry, [CHIM.MATE]Chemical Sciences/Material chemistry, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Molecular physics, Atomic units, Macroscopic scale, 0103 physical sciences, Femtosecond, X-ray crystallography, Radiative transfer, Radiation damage, Microelectronics, 010306 general physics, 0210 nano-technology, business, [CHIM.RADIO]Chemical Sciences/Radiochemistry, Instrumentation
Abstract: International audience; Radiation damage in materials is a space and time multi-scale process, ranging from the atomic scale up to the macroscopic scale, and from the femtosecond up to several years. The prediction of the long term evolution of materials subjected to radiative environments (in the nuclear or in the space industry, as well as in the field of microelectronics) therefore requires the combination of several simulation and experimental techniques able to cover the different space and time scales involved. X-ray diffraction (XRD) is highly sensitive to atomic displacements while probing macroscopic volumes of material. In this respect it is perfectly suited for the study of radiation damage. In this work it is shown how XRD can be quantitatively and qualitatively used in combination with numerical simulations, like molecular dynamics and rate-equation cluster dynamics, to analyze damage build-up in irradiated SiC and ZrC single crystals. Particular emphasis is laid on the methodological aspects of XRD data treatment in order to extract parameters such as damage-induced strain and disorder.
Published: 2019
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2. Optimization and assessment of a novel gastric electrode anchoring system designed to be implanted by minimally invasive surgery

Author: Charlotte Sandersen, Hugo Smets, Laurent Lonys, Géraldine Bolen, Antoine Nonclercq, Stefan Deleuze, Pierre Lambert, Vicente Acuña, Jacques Devière, Anne Vanhoestenberghe, Fabrizio Giannotta, Sophie Egyptien, Adrien Debelle, Alain Delchambre, Erika Bianchini, Hilde De Rooster, and François Huberland
Subjects: Gastric electrical stimulation, Materials science, Percutaneous, 0206 medical engineering, Biomedical Engineering, Biophysics, Anchoring, 02 engineering and technology, Sciences de l'ingénieur, Muscular layer, 03 medical and health sciences, Dogs, 0302 clinical medicine, Cadaver, medicine, In-vivo validation, Animals, Minimally Invasive Surgical Procedures, Single incision surgery, Device parameters, Percutaneous implantation, Electrode anchoring, Stomach, 020601 biomedical engineering, Electrodes, Implanted, Ingénierie biomédicale, medicine.anatomical_structure, Electrode, Invasive surgery, 030217 neurology & neurosurgery, Biomedical engineering
Abstract: A novel electrode anchoring design and its implantation procedure, aiming for a minimally invasive solution for gastric electrical stimulation, are presented. The system comprises an anchor made of a flexible body embedding two needle-shaped electrodes. The electrodes can easily switch from a parallel position – to pierce the stomach – to a diverging position – enabling them to remain firmly anchored into the muscular layer of the stomach. Key device parameters governing anchoring stability were assessed on a traction test bench, and optimal values were derived. The device was then implanted in six dogs by open surgery to assess its anchoring durability in vivo. Computed tomography images showed that the electrodes remained well placed within the dogs’ gastric wall over the entire assessment period (more than one year). Finally, a prototype of a surgical tool for the minimally invasive device placement was manufactured, and the anchoring procedure was tested on a dog cadaver, providing the proof of concept of the minimally invasive implantation procedure. The use of our electrode anchoring system in long-term gastric electrical stimulation is promising in terms of implantation stability (the anchor withstands a force up to 0.81 N), durability (the anchor remains onto the stomach over one year) and minimal invasiveness of the procedure (the diameter of the percutaneous access is smaller than 12 mm). Moreover, the proposed design could have clinical applications in other hollow organs, such as the urinary bladder., info:eu-repo/semantics/published
Published: 2021

3. Disordering kinetics in monocrystalline and epitaxial Si upon energy deposition induced by dual-beam ion irradiation

Author: O. Najjar, Aurélien Debelle, C. Cabet, Alexandre Boulle, E. Olebunne, Lionel Thomé, F. Pallier, Gaëlle Gutierrez, Frédérico Garrido, Laboratoire de Physique des 2 Infinis Irène Joliot-Curie (IJCLab), Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Service de recherches de métallurgie physique (SRMP), Département des Matériaux pour le Nucléaire (DMN), CEA-Direction des Energies (ex-Direction de l'Energie Nucléaire) (CEA-DES (ex-DEN)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-CEA-Direction des Energies (ex-Direction de l'Energie Nucléaire) (CEA-DES (ex-DEN)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay, IRCER - Axe 3 : organisation structurale multiéchelle des matériaux (IRCER-AXE3), Institut de Recherche sur les CERamiques (IRCER), Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), and An-Najah National University
Subjects: 010302 applied physics, Materials science, Thin layers, Annealing (metallurgy), Analytical chemistry, 02 engineering and technology, General Chemistry, 021001 nanoscience & nanotechnology, Rutherford backscattering spectrometry, 01 natural sciences, 7. Clean energy, Fluence, Ion, Monocrystalline silicon, Crystallinity, 0103 physical sciences, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], General Materials Science, Irradiation, 0210 nano-technology
Abstract: International audience; In this work, the effect on the amorphization process of the simultaneous electronic (Se) and nuclear (Sn) energy deposition occurring upon dual-beam irradiation experiments was studied in both bulk Si single-crystals (Si-b) and epitaxial Si thin layers (Si-tl). For this purpose, 900 keV I (for Sn) and 27 MeV Fe (for Se) ions were used at different fluences in order to get complete disordering kinetics. These latter were determined through the monitoring of both the disorder fraction, obtained via Rutherford backscattering spectrometry in channeling experiments and the elastic strain derived from X-ray diffraction measurements. Raman spectroscopy 2D-maps were also recorded to support the results of the two other techniques. RBS/C data indicate that Sn irradiation alone leads to full amorphization of the irradiated region in both Si-b and Si-tl at a fluence of 1.5 × 1014 cm−2. In contrast, during the dual-beam irradiation (Sn & Se), such a complete phase transformation is prevented up to a fluence of 3 × 1014 cm−2. Similarly, the maximum elastic strain developing before the loss of crystallinity reaches a maximum of ~ 1% at 1.5 × 1014 cm−2, but it remains below 0.2% at the same fluence in the Sn & Se regime for which full amorphization is not detected. These results indicate that the electronic energy deposition induces a significant dynamic annealing of the damage created by the nuclear energy loss, and this annealing occurs over the entire investigated fluence range (i.e., up to 3 × 1014 cm−2). The annealing efficiency is shown to be lower for Si-tl, as demonstrated by the disorder and strain values that are always larger than for the bulk counterpart.
Published: 2021
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4. Analysing vagus nerve spontaneous activity using finite element modelling

Author: Bernardo Innocenti, Hugo Smets, Nicolas Julemont, Antoine Nonclercq, Riem El Tahry, Simone Vespa, Benoît Haut, Jean Delbeke, Adrien Debelle, Lars Stumpp, Pascal Doguet, Joaquin Cury, Anne Vanhoestenberghe, UCL - SSS/IONS/NEUR - Clinical Neuroscience, UCL - SSS/IONS/CEMO - Pôle Cellulaire et moléculaire, UCL - (SLuc) Service de neurologie, and UCL - (SLuc) Centre de référence pour l'épilepsie réfractaire
Subjects: fibre discrimination, Materials science, Nerve fibre, Action potential, Vagus Nerve Stimulation, medicine.medical_treatment, Finite Element Analysis, Biomedical Engineering, Action Potentials, Context (language use), Cellular and Molecular Neuroscience, Nerve Fibers, neural computational modelling, medicine, Animals, recording setup design, Nerve activity, Fiber size, Vagus Nerve, vagus nerve recording, Finite element method, Vagus nerve, Rats, spontaneous activity identification, Vagus nerve stimulation, Biomedical engineering
Abstract: OBJECTIVE Finite element modelling has been widely used to understand the effect of stimulation on the nerve fibres. Yet the literature on analysis of spontaneous nerve activity is much scarcer. In this study, we introduce a method based on a finite element model, to analyse spontaneous nerve activity with a typical bipolar electrode recording setup, enabling the identification of spontaneously active fibres. We applied our method to the vagus nerve, which plays a key role in refractory epilepsy. APPROACH We developed a 3D model including dynamic action potential propagation, based on the vagus nerve geometry. The impact of key recording parameters - inter-electrode distance and temperature - and uncontrolled parameters - fibre size and position in the nerve - on the ability to discriminate active fibres were quantified. A specific algorithm was implemented to detect and classify action potentials from recordings and tested on six rats in vivo vagus nerve recordings. MAIN RESULTS Fibre diameters can be discriminated if they are below 3 µm and 7 µm, respectively for inter-electrode distances of 2 mm and 4 mm. The impact of the position of the fibre inside the nerve on fibre diameter discrimination, is limited. The range of active fibres identified by modelling in the vagus nerve of rats is in agreement with ranges found at histology. SIGNIFICANCE The nerve fibre diameter, directly proportional to the action potential propagation velocity, is related to a specific physiological function. Estimating the source fibre diameter is thus essential to interpret neural recordings. Among many possible applications, the present method was developed in the context of a project to improve vagus nerve stimulation therapy for epilepsy.
Published: 2020

5. Comparison of neutron and ion irradiation induced lattice parameter changes in Ni and MgO single crystals

Author: Alexandre Boulle, Aurélien Debelle, Jerome Bourcois, Xin Jin, Institut de Recherche sur les CERamiques (IRCER), Institut de Chimie du CNRS (INC)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Physique des 2 Infinis Irène Joliot-Curie (IJCLab), Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Institut des Procédés Appliqués aux Matériaux (IPAM), and Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)
Subjects: 010302 applied physics, Diffraction, Condensed Matter - Materials Science, Nuclear and High Energy Physics, Materials science, 02 engineering and technology, 021001 nanoscience & nanotechnology, 7. Clean energy, 01 natural sciences, Molecular physics, Ion, Lattice constant, Recoil, Nuclear Energy and Engineering, Lattice (order), 0103 physical sciences, Atom, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], General Materials Science, Neutron, Irradiation, 0210 nano-technology
Abstract: Data, available in the literature, of lattice parameter changes (i.e. elastic strain) in Ni and MgO single crystals neutron-irradiated in nuclear reactors are tentatively reproduced using ad hoc ion irradiation experiments. The nature and energy of the ions were selected so that their weighted average recoil spectrum matches at best that of the neutron spectrum inside the reactor. The ion fluence was calculated to obtain similar displacement per atom (dpa) levels. The lattice parameters of the irradiated samples were determined using high-resolution X-ray diffraction. We show that, for Ni, it is not possible to reproduce the neutron data because no lattice parameter change is measured after ion irradiation. Main reasons for this failure are the low dpa levels, the small damaged volume and the presence of a complex defect spectrum that leads to a net zero strain. On the contrary, for MgO, which is more prone to exhibiting high strain levels upon irradiation, a very close lattice parameter change buildup is obtained between neutron and ion irradiations, providing that the ion irradiation temperature is significantly increased (by ∼473 K).
Published: 2020
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6. Evolution of irradiation-induced strain in an equiatomic NiFe alloy

Author: Hongbin Bei, William J. Weber, Mohammad W. Ullah, Neila Sellami, Yanwen Zhang, Aurélien Debelle, Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM), Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), and Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11)
Subjects: [PHYS]Physics [physics], 010302 applied physics, Diffraction, Materials science, Strain (chemistry), Mechanical Engineering, Alloy, Relaxation (NMR), Metals and Alloys, 02 engineering and technology, engineering.material, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Crystallographic defect, Molecular physics, Ion, Crystallography, Mechanics of Materials, 0103 physical sciences, engineering, General Materials Science, Irradiation, Dislocation, 0210 nano-technology
Abstract: International audience; The evolution of irradiation-induced atomic strain in an equiatomic NiFe concentrated solid-solution alloy is investigated using both atomistic simulations and x-ray diffraction analysis. The irradiations are performed using 1.5 MeV Ni ions to fluences ranging from 1 × 1013 to 1 × 1014 cm− 2. The irradiation simulations are carried out by overlapping 5 keV Ni recoils cascades up to a total of 300 recoils. An increase of volumetric strain is observed at low dose, which is associated with production of point defects and small clusters. Relaxation of strain occurs at higher doses, when large defect clusters, e.g., dislocation loops, dominate.
Published: 2017
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7. New developments in the simulation of Rutherford backscattering spectrometry in channeling mode using arbitrary atom structures

Author: Jean-Paul Crocombette, Flyura Djurabekova, Kai Nordlund, Frédérico Garrido, Aurélien Debelle, Shuo Zhang, Xin Jin, Laboratoire de Physique des 2 Infinis Irène Joliot-Curie (IJCLab), Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Institut de Recherche sur les CERamiques (IRCER), Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Department of Physics, Helsinki Institute of Physics, Helsinki Institute of Sustainability Science (HELSUS), and Helsinki Institute of Urban and Regional Studies (Urbaria)
Subjects: Materials science, Ion beam, [PHYS.NUCL]Physics [physics]/Nuclear Theory [nucl-th], ION-IMPLANTATION, binary collision approximation, 02 engineering and technology, Binary collision approximation, 114 Physical sciences, 01 natural sciences, COMPUTER-SIMULATION, Ion, 0103 physical sciences, Atom, PROGRAM, SCATTERING, General Materials Science, TEMPERATURE, 010302 applied physics, Scattering, 113 Computer and information sciences, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Rutherford backscattering spectrometry, Crystallographic defect, IRRADIATION, Computer Science Applications, Computational physics, NEUTRON-DIFFRACTION, crystallographic defect, Ion implantation, Mechanics of Materials, Modeling and Simulation, Rutherford backscattering spectrometry in channeling mode simulation, MONTE-CARLO-SIMULATION, 0210 nano-technology
Abstract: As Rutherford backscattering spectrometry in channeling mode (RBS/C) is an efficient technique for characterizing crystallographic defects, its computational simulation has drawn attention over the past several decades. Recently, a RBS/C simulation code based on the binary collision approximation called Rutherford backscattering simulation in arbitrary defective crystals has been suggested and successfully applied to predict the RBS/C spectra from different damaged materials, whose structures were generated in high-dose ion irradiation atomistic simulations. In the present paper, we introduce new developments improving the flexibility of the developed software and its applicability to different types of materials. More precisely, we modified the algorithm describing the slowdown process of backscattered ions, added fitting parameters in the collision partner search routine, modified the routine taking into account target atom thermal vibrations and provided new descriptions of the ion beam divergence. As an example, the effect of the modifications on simulated RBS/C spectra is shown for an 〈011〉-oriented UO2 crystal analyzed with a 3.085 MeV He2+ ion beam. Some of these changes proved necessary to achieve satisfying agreement between simulations and experimental data. Similar observation was made for 〈001〉-oriented Si and 〈001〉-oriented GaAs crystals analyzed with a 1.4 MeV He+ ion beam. In these simulations, the modifications have also resulted in good agreement with experiment.
Published: 2020
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8. Analysis of strain and disordering kinetics based on combined RBS-channeling and X-ray diffraction atomic-scale modelling

Author: Xin Jin, Jean-Paul Crocombette, Alexandre Boulle, Aurélien Debelle, Alain Chartier, Laboratoire de Physique des 2 Infinis Irène Joliot-Curie (IJCLab), Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), IRCER - Axe 3 : organisation structurale multiéchelle des matériaux (IRCER-AXE3), Institut de Recherche sur les CERamiques (IRCER), Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Service de la Corrosion et du Comportement des Matériaux dans leur Environnement (SCCME), Département de Physico-Chimie (DPC), CEA-Direction des Energies (ex-Direction de l'Energie Nucléaire) (CEA-DES (ex-DEN)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-CEA-Direction des Energies (ex-Direction de l'Energie Nucléaire) (CEA-DES (ex-DEN)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay, Service de recherches de métallurgie physique (SRMP), and Département des Matériaux pour le Nucléaire (DMN)
Subjects: Diffraction, Materials science, Polymers and Plastics, 02 engineering and technology, Channelling, 01 natural sciences, Atomic units, X-ray diffraction (XRD), 0103 physical sciences, Radiative transfer, Microelectronics, Absolute scale, 010302 applied physics, business.industry, Molecular dynamics simulations, Metals and Alloys, Experimental data, [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, Rutherford backscattering spectrometry, Electronic, Optical and Magnetic Materials, Computational physics, Ceramics and Composites, Defects, 0210 nano-technology, business, [CHIM.RADIO]Chemical Sciences/Radiochemistry, RBS/C, Irradiation effect
Abstract: International audience; Ion beams delivered by particle accelerators are routinely used to emulate harsh, radiative environments and they also constitute the foundations of the modern microelectronics industry. To characterize irradiated materials, numerous experimental and computational techniques can be implemented, but it is extremely difficult to effectively intertwine them, and to compare the associated data. In the present work, we present an integrated, experimental and computational approach that uses a same set of molecular dynamics simulations to generate signals of Rutherford backscattering spectrometry in channelling condition and X-ray diffraction, with UO2 as a test-case material. From these signals, parameters to monitor the damage level are computed, compared and confronted with experimental data. Although the evolution of the strain and disordering kinetics obtained by simulations differ on an absolute scale from those obtained experimentally (a discrepancy inherent to the method used to generate the atomic-scale data), a very good relative agreement is obtained, which demonstrates the validity of the approach, hence providing a new tool for the fine study of irradiation effects in materials.
Published: 2020
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9. Radiation damage in uranium dioxide: coupled effect between electronic and nuclear energy losses

Author: F. Leprêtre, M. Bricout, Renaud C. Belin, Aurélien Debelle, Gaëlle Gutierrez, Yves Pipon, Frédérico Garrido, C. Onofri, Lab JANNUS, Service de recherches de métallurgie physique (SRMP), Département des Matériaux pour le Nucléaire (DMN), CEA-Direction des Energies (ex-Direction de l'Energie Nucléaire) (CEA-DES (ex-DEN)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-CEA-Direction des Energies (ex-Direction de l'Energie Nucléaire) (CEA-DES (ex-DEN)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Département des Matériaux pour le Nucléaire (DMN), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay, Laboratoire de Caractérisation et d'étude des Propriétés des Combustibles (LCPC), Service d'Analyses, d'Elaboration, d'Expérientations et d'Examens des combustibles (SA3E), Département d'Etudes des Combustibles (DEC), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-CEA-Direction des Energies (ex-Direction de l'Energie Nucléaire) (CEA-DES (ex-DEN)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Département d'Etudes des Combustibles (DEC), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM), Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), Institut de Physique Nucléaire de Lyon (IPNL), Centre National de la Recherche Scientifique (CNRS)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3), CEA-Direction de l'Energie Nucléaire (CEA-DEN), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-CEA-Direction de l'Energie Nucléaire (CEA-DEN), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-CEA-Direction de l'Energie Nucléaire (CEA-DEN), Université Claude Bernard Lyon 1 (UCBL), and Université de Lyon-Université de Lyon-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Nuclear and High Energy Physics, Materials science, Uranium dioxide, 02 engineering and technology, Kinetic energy, 01 natural sciences, 7. Clean energy, Molecular physics, 010305 fluids & plasmas, Ion, chemistry.chemical_compound, symbols.namesake, 0103 physical sciences, Radiation damage, General Materials Science, Irradiation, ComputingMilieux_MISCELLANEOUS, 021001 nanoscience & nanotechnology, Nuclear Energy and Engineering, chemistry, Transmission electron microscopy, symbols, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Dislocation, 0210 nano-technology, Raman spectroscopy
Abstract: A coupling between the nuclear and electronic energy losses occur in the nuclear fuel (UO2) during in-reactor operations. However, the underlying mechanisms involved are still to be investigated. In this work, synergistic effects of nuclear and electronic energy losses have been investigated by irradiating crystals with single (900 keV I ions or 27 MeV Fe ions) and dual (900 keV I ions and 27 MeV Fe ions, simultaneously) ion beams at the JANNUS-Saclay facility. The damage build-up kinetic was in situ characterized by Raman spectroscopy. The microstructure evolution was determined by transmission electron microscopy (TEM) observations and by X-ray diffraction (XRD) analysis. Results show that both crystalline disorder and strain level are lower under dual-beam compared to the single-beam ion irradiations. Indeed, the dual-beam irradiation induces a transition from the formation of dislocation loops to dislocation lines. This result can be explained, in the framework of the thermal spike model, by a local increase of the temperature along the high-energy ion path. This temperature increase likely induces an enhanced defect migration leading to defect rearrangement.
Published: 2020
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10. Damage accumulation in MgO irradiated with MeV Au ions at elevated temperatures

Author: Lionel Thomé, Diana Bachiller-Perea, Moni Behar, Aurélien Debelle, Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM PCI), and Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Saclay-Univ. Paris-Sud
Subjects: Diffraction, Nuclear and High Energy Physics, Materials science, MIGRATION, Annealing (metallurgy), Analytical chemistry, Oxide, MgO, 02 engineering and technology, 01 natural sciences, Fluence, Ion, chemistry.chemical_compound, 0103 physical sciences, General Materials Science, Cubic zirconia, Irradiation, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, [PHYS]Physics [physics], ZIRCONIA, Irradiation damage, Radiochemistry, OXIDE, 021001 nanoscience & nanotechnology, Reciprocal lattice, Nuclear Energy and Engineering, chemistry, Ion irradiation, 0210 nano-technology, RBS/C
Abstract: International audience; The damage accumulation process in MgO single crystals under medium-energy heavy ion irradiation (1.2 MeV Au) at fluences up to 4 x 1014 cm(-2) has been studied at three different temperatures: 573, 773, and 1073 K. Disorder depth profiles have been determined through the use of the Rutherford back-scattering spectrometry in channeling configuration (RBS/C). The analysis of the RBS/C data reveals two steps in the MgO damage process, irrespective of the temperature. However, we find that for increasing irradiation temperature, the damage level decreases and the fluence at which the second step takes place increases. A shift of the damage peak at increasing fluence is observed for the three temperatures, although the position of the peak depends on the temperature. These results can be explained by an enhanced defect mobility which facilitates defect migration and may favor defect annealing. X-ray diffraction reciprocal space maps confirm the results obtained with the RBS/C technique. (C) 2016 Elsevier B.V. All rights reserved.
Published: 2016
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11. Effect of coupled electronic and nuclear energy deposition on strain and stress levels in UO$_2$

Author: C. Onofri, M. Bricout, Dominique Gosset, Aurélien Debelle, Gaëlle Gutierrez, CEA-Direction de l'Energie Nucléaire (CEA-DEN), Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM), Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), and CEA-Direction des Energies (ex-Direction de l'Energie Nucléaire) (CEA-DES (ex-DEN))
Subjects: Diffraction, [PHYS]Physics [physics], Nuclear and High Energy Physics, Materials science, Strain (chemistry), Physics::Instrumentation and Detectors, Analytical chemistry, Pellets, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, 7. Clean energy, 010305 fluids & plasmas, Ion, Stress (mechanics), Lattice constant, Nuclear Energy and Engineering, 0103 physical sciences, General Materials Science, Irradiation, 0210 nano-technology, Deposition (law)
Abstract: International audience; UO2 polycrystals were irradiated in the nuclear energy-loss regime, Sn (900 keV I and 2 Mev Au ions) and also with an additional electronic energy deposition, Se (900 keV I and 36 MeV W ions simultaneously, i.e. Sn&Se). The strain/stress state exhibited by the irradiated pellets was determined by x-ray diffraction measurements. Results show that both measured strain and estimated stress are lower in the dual-beam irradiated samples, indicating that there is an ionization-induced change in the ballistically-generated-defect spectrum. Furthermore, it is shown that the thin irradiated layers maintain the lattice parameter of the pristine material in the basal plane.
Published: 2019
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12. Defects and mechanical properties in weakly damaged Si ion implanted GaAs

Author: Markus Rettenmayr, E. Schmidt, Elke Wendler, R. Loetzsch, Aurélien Debelle, Andreas Undisz, Giuseppe Zollo, Alexandre Boulle, P. Kutza, Ingo Uschmann, Fabrizio Gala, Sascha Creutzburg, Institut de Recherche sur les CERamiques (IRCER), Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM), and Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Diffraction, [PHYS]Physics [physics], Materials science, GaAs, Semiconductors I: bulk, 02 engineering and technology, 021001 nanoscience & nanotechnology, Rutherford backscattering spectrometry, Microstructure, 01 natural sciences, Crystallographic defect, Molecular physics, radiation damage, GaAs, defects, Ion, Shear modulus, Transmission electron microscopy, radiation damage, 0103 physical sciences, 010306 general physics, 0210 nano-technology, Spectroscopy, defects
Abstract: Damage formation is investigated in GaAs implanted with 1 MeV Si ions to ion fluences from $3\ifmmode\times\else\texttimes\fi{}{10}^{12}$ to $5\ifmmode\times\else\texttimes\fi{}{10}^{15}\phantom{\rule{4pt}{0ex}}{\mathrm{cm}}^{\ensuremath{-}2}$ at room temperature. Under the conditions applied, amorphization of the implanted layers does not occur. The weakly damaged layers are studied by applying different experimental techniques including Rutherford backscattering spectrometry in channeling configuration, x-ray diffraction, in situ curvature measurement, optical subgap spectroscopy, and transmission electron microscopy. The results are evaluated and quantitatively connected with each other. Damage formation is described as a function of the ion fluence using a common defect evolution model. Point defects and defect clusters have to be taken into account in the ion fluence range of main interest up to $2\ifmmode\times\else\texttimes\fi{}{10}^{15}\phantom{\rule{4pt}{0ex}}{\mathrm{cm}}^{\ensuremath{-}2}$. Point defects contribute by a factor of about 8 more to both perpendicular strain and in-plane stress than defect clusters. When the concentration of point defects or the induced strain reaches a critical value, defect clusters form, which ensures that no further increase of perpendicular strain occurs. This reveals a clear driving force for cluster formation. The microstructure of the defect clusters cannot be determined from the results. ${\mathrm{As}}_{3}{\mathrm{Ga}}_{2}$ interstitial clusters are supposed. A remarkable decrease of the shear modulus of the implanted layers below the value of pristine GaAs by $\ensuremath{\approx}\ensuremath{-}35%$ is observed. Surprisingly, the change of shear modulus already sets in at a very low damage level of a few percent.
Published: 2019
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13. Ionization-induced thermally activated defect-annealing process in SiC

Author: Aurélien Debelle, William J. Weber, Lionel Thomé, Frédérico Garrido, Olli H. Pakarinen, Isabelle Monnet, Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM), Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11), Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Centre National de la Recherche Scientifique (CNRS)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Caen Normandie (UNICAEN), Normandie Université (NU), Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), and Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)
Subjects: [PHYS]Physics [physics], Materials science, Physics and Astronomy (miscellaneous), Annealing (metallurgy), 02 engineering and technology, 021001 nanoscience & nanotechnology, Rutherford backscattering spectrometry, Microstructure, 01 natural sciences, Fluence, Molecular physics, Structural and mechanical properties, Ion, Swift heavy ion, Ionization, 0103 physical sciences, General Materials Science, Irradiation, [PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det], 010306 general physics, 0210 nano-technology
Abstract: Ionizing events can lead to panoply of irradiation effects, and in silicon carbide (SiC), they drastically modify the defect production rate or the initial density. To better understand this phenomenon, 6H-SiC single crystals were first predamaged using low-velocity 100-keV $\mathrm{F}{\mathrm{e}}^{+}$ ions at three fluences in the range of ${10}^{14}\phantom{\rule{0.16em}{0ex}}\mathrm{c}{\mathrm{m}}^{\ensuremath{-}2}$ to induce three different initial disorder levels peaking at values between \ensuremath{\sim}0.8 and 1 (1 corresponding to full amorphization). Crystals were then submitted to swift heavy ion irradiation in the ${10}^{13}\phantom{\rule{0.16em}{0ex}}\mathrm{c}{\mathrm{m}}^{\ensuremath{-}2}$ fluence range at both low (\ensuremath{\sim}100 K) and high (\ensuremath{\sim}770 K) temperature. Rutherford backscattering spectrometry in channeling conditions revealed that swift ions allow annealing part of the initial damage, the recovery efficiency increasing with the irradiation temperature and reaching 75% in initially severely disordered crystals. This temperature effect has been qualitatively predicted by molecular dynamics simulations. Transmission electron microscopy allowed imaging both the recovery and the difference in the microstructure of the layers irradiated at low or high temperature. Recovery cross sections are found to lie in the range of a few square nanometers, consistent with previously reported values. A scenario for a general, two-step annealing mechanism referred to as an ionization-activated, thermally assisted defect-annealing (IATADA) process is proposed. This mechanism rationalizes the diverse descriptions reported so far in the literature.
Published: 2019
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14. Effect of electronic energy dissipation on strain relaxation in irradiated concentrated solid solution alloys

Author: Hans M. Christen, Aurélien Debelle, Haizhou Xue, Mohammad W. Ullah, Hongbin Bei, William J. Weber, Jong K. Keum, Neila Sellami, Yanwen Zhang, Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM), and Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)
Subjects: [PHYS]Physics [physics], Materials science, Annealing (metallurgy), 020502 materials, 02 engineering and technology, Ionizing irradiation, Dissipation, Ion fluence, Condensed Matter::Materials Science, Thermal conductivity, 0205 materials engineering, Chemical physics, General Materials Science, Irradiation, Electronic energy, Solid solution
Abstract: International audience; The effect of energy deposition by energetic particles on Ni and two single-phase concentrated solid solution alloys (NiFe and NiCoCrFe) is investigated through combined experimental and modelling efforts. Damage evolution as a function of increasing ion fluence is monitored via elastic strain developed in the irradiated crystals. We show that damage produced from displacement collision cascades is sensitive to subsequent highly ionizing irradiation that the strain generated by elastic nuclear collisions undergoes partial relaxation upon high-energy irradiation. This finding indicates a change in the damage structure upon electronic energy deposition due to both predominant defect annealing and growth of small defect clusters. Strain relaxation, more pronounced in the alloys than in Ni, is ascribed to both higher thermal conductivity and weaker electron-phonon coupling in Ni.
Published: 2019
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15. Strain engineering 4H-SiC with ion beams

Author: Yanwen Zhang, Jong K. Keum, Fuxiang Zhang, Haizhou Xue, William J. Weber, Aurélien Debelle, Alexandre Boulle, Yang Tong, Institut de Recherche sur les CERamiques (IRCER), Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM), Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), Institut de Chimie du CNRS (INC)-Institut des Procédés Appliqués aux Matériaux (IPAM), and Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)
Subjects: 010302 applied physics, [PHYS]Physics [physics], Materials science, Physics and Astronomy (miscellaneous), Annealing (metallurgy), Physics::Instrumentation and Detectors, Physics::Medical Physics, Analytical chemistry, 02 engineering and technology, 021001 nanoscience & nanotechnology, Rutherford backscattering spectrometry, 01 natural sciences, Fluence, Ion, symbols.namesake, Condensed Matter::Materials Science, Strain engineering, Physics::Plasma Physics, 0103 physical sciences, symbols, Irradiation, 0210 nano-technology, Single crystal, Raman scattering
Abstract: International audience; Single crystals of 4H-SiC irradiated with 900 keV Si and 21 MeV Ni ions separately and sequentially were studied by Rutherford backscattering spectrometry in channeling geometry, single crystal X-ray diffraction, and Raman scattering. SiC irradiated with 900 keV Si ions to a fluence of 6.3 × 1014 ions/cm2 experiences 7.3% strain over the depth of 650 nm. Strain relaxation from ionization-induced annealing was directly observed due to subsequent irradiation with 21 MeV Ni ions to a fluence of 2 × 1014 ions/cm2. These competitive processes suggest the use of ion irradiation to create a specific strain state in 4H-SiC, particularly in films.
Published: 2019
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16. Comparative study of radiation defect dynamics in 3C-SiC by X-ray diffraction, Raman scattering, and ion channeling

Author: L. B. Bayu Aji, Elissaios Stavrou, Alexandre Boulle, Aurélien Debelle, Sergei O. Kucheyev, J. B. Wallace, Max-Planck-Institut für Festkörperforschung, Max-Planck-Gesellschaft, Speed Laboratory, University of Galasgow, IRCER - Axe 3 : organisation structurale multiéchelle des matériaux (IRCER-AXE3), Institut de Recherche sur les CERamiques (IRCER), Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM), and Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)
Subjects: 010302 applied physics, Diffraction, Materials science, Relaxation (NMR), [CHIM.MATE]Chemical Sciences/Material chemistry, 02 engineering and technology, General Chemistry, Radiation, 021001 nanoscience & nanotechnology, 01 natural sciences, Molecular physics, Ion, Characterization (materials science), symbols.namesake, 0103 physical sciences, X-ray crystallography, symbols, Radiation damage, General Materials Science, 0210 nano-technology, ComputingMilieux_MISCELLANEOUS, Raman scattering
Abstract: At moderately elevated temperatures, radiation defects in SiC exhibit pronounced dynamic annealing, which remains poorly understood. Here, we study 3C-SiC bombarded at 100 $$^{\circ }$$ C with pulsed beams of 500 keV Ar ions. Radiation damage is monitored by a combination of X-ray diffraction, Raman scattering, and ion channeling. Similar damage buildup behavior but with different defect relaxation time constants, ranging from $$\sim 1$$ to $$\sim 6$$ ms, is observed for the different types of lattice defects probed by these techniques. A correlation between relaxation times and the nature of the defects is proposed. These results reveal additional complexity of radiation defect dynamics in SiC and demonstrate that results of different defect characterization techniques are needed for a better understanding of dynamic annealing processes in solids.
Published: 2018
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17. How relative defect migration energies drive contrasting temperature-dependent microstructural evolution in irradiated ceramics

Author: Alexandre Boulle, Enrique Martínez, Jean-Paul Crocombette, Frédérico Garrido, Lionel Thomé, Blas P. Uberuaga, Moni Behar, Yara Haddad, Aurélien Debelle, Diana Bachiller-Perea, Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM), Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11), Service de recherches de métallurgie physique (SRMP), Département des Matériaux pour le Nucléaire (DMN), CEA-Direction des Energies (ex-Direction de l'Energie Nucléaire) (CEA-DES (ex-DEN)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-CEA-Direction des Energies (ex-Direction de l'Energie Nucléaire) (CEA-DES (ex-DEN)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay, IRCER - Axe 3 : organisation structurale multiéchelle des matériaux (IRCER-AXE3), Institut de Recherche sur les CERamiques (IRCER), Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM PCI), Université Paris-Saclay-Univ. Paris-Sud-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3), Universidad Federal de Río Grande del Sur, Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), and Los Alamos National Laboratory (LANL)
Subjects: Diffraction, Materials science, Physics and Astronomy (miscellaneous), Condensed matter physics, 02 engineering and technology, Rate equation, [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, Ion, [SPI.MAT]Engineering Sciences [physics]/Materials, visual_art, Vacancy defect, 0103 physical sciences, visual_art.visual_art_medium, General Materials Science, Cubic zirconia, Ceramic, Irradiation, 010306 general physics, 0210 nano-technology, Energy (signal processing), ComputingMilieux_MISCELLANEOUS
Abstract: Ceramic materials have become widely used in various fields of material science, and ceramic oxides such as cubic zirconia (c-${\mathrm{ZrO}}_{2})$ and magnesia (MgO) are candidate materials for nuclear energy applications. For the corresponding in-service conditions of these materials, there is a crucial need in studies at moderate or high temperatures of the physical phenomena underlying the damage buildup under irradiation. In the present work, we show, using x-ray diffraction, that these two materials exhibit a similar damage accumulation process under ion irradiation at fixed temperature. However, they display an unexpected opposite damaging rate to changes in the irradiation temperature. In fact, as the temperature is increased, the final damage state is reached earlier in c-${\mathrm{ZrO}}_{2}$ while it is delayed in MgO. Rate equation cluster dynamics simulations show that defect clustering is favored over defect recombination in c-${\mathrm{ZrO}}_{2}$, but the situation is reversed for MgO, explaining the observed opposite response to temperature of the two materials. This contrasting behavior can be rationalized in terms of nonequivalent interstitial versus vacancy defect migration energies in MgO. We finally demonstrate that these results allow for a qualitative prediction of the evolution of the experimental irradiation-induced disorder with temperature, henceforth potentially reducing the cost in selecting and developing ad hoc materials.
Published: 2018
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18. Multi-scale simulation of the experimental response of ion-irradiated zirconium carbide: Role of interstitial clustering

Author: Aurélien Debelle, Lionel Thomé, S. Pellegrino, Patrick Trocellier, Thomas Jourdan, Jean-Paul Crocombette, Service de recherches de métallurgie physique (SRMP), Département des Matériaux pour le Nucléaire (DMN), CEA-Direction des Energies (ex-Direction de l'Energie Nucléaire) (CEA-DES (ex-DEN)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-CEA-Direction des Energies (ex-Direction de l'Energie Nucléaire) (CEA-DES (ex-DEN)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay, CSNSM PCI, Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM), Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11), and Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Materials science, Polymers and Plastics, Ion beam, 02 engineering and technology, 01 natural sciences, Molecular physics, Fluence, Ion, Zirconium carbide, Interstitial clusters, chemistry.chemical_compound, 0103 physical sciences, Irradiation, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], Diffusion (business), [PHYS]Physics [physics], 010302 applied physics, Metals and Alloys, Rate equation, 021001 nanoscience & nanotechnology, Rate equation cluster dynamics, Electronic, Optical and Magnetic Materials, Crystallography, chemistry, Ion irradiation, Transmission electron microscopy, Ceramics and Composites, 0210 nano-technology
Abstract: International audience; The response of zirconium carbide to heavy-ion irradiation at room temperature has been studied by X-ray diffraction, ion channeling and transmission electron microscopy. Below 5 × 1014 cm−2, we observe a build-up of elastic strain with increasing fluences. At this threshold fluence the strain is released and important dechanneling appears as well as visible TEM damage. With increasing fluence, this damage is found to spread in the material deeper than the depth of direct damaging by the ion beam. These experimental observations are reproduced and explained by Density Functional Theory informed Rate Equation Cluster Dynamics simulations. Simulations show that the response of ZrC upon ion-irradiation is driven by the diffusion and clustering of interstitials. The two-step evolution seen in experiments stems from the growth of interstitial clusters with a concomitant starvation of the smallest clusters induced by the continuous accumulation of vacancies. The damaging of the material beyond the range of primary damage is driven by diffusion of interstitials.
Published: 2016
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19. Damage processes in MgO irradiated with medium-energy heavy ions

Author: Aurélien Debelle, Sandra Moll, William J. Weber, Jacek Jagielski, Lionel Thomé, Yanwen Zhang, Jean-Paul Crocombette, Z. Zihua, Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse (CSNSM), Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), Department of Mechanical and Aerospace Engineering [Princeton] (MAE), Princeton University, CSNSM PCI, Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM), Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), CEA-Direction des Energies (ex-Direction de l'Energie Nucléaire) (CEA-DES (ex-DEN)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institute of Electronic Materials Technology (IEMT), Institute of Electronic Materials Technology, Pacific Northwest National Laboratory (PNNL), and Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11)
Subjects: Materials science, [PHYS.NUCL]Physics [physics]/Nuclear Theory [nucl-th], Polymers and Plastics, Metals and Alloys, Analytical chemistry, [PHYS.NEXP]Physics [physics]/Nuclear Experiment [nucl-ex], Rutherford backscattering spectrometry, Electronic, Optical and Magnetic Materials, Ion, Secondary ion mass spectrometry, Transmission electron microscopy, Nuclear reaction analysis, Ceramics and Composites, Cubic zirconia, Irradiation, Atomic physics, medium-energy, Yttria-stabilized zirconia
Abstract: International audience; The micro-structural modifications produced in MgO single crystals exposed to medium-energy heavy ions (1.2-MeV Au) were investigated using Rutherford backscattering spectrometry in channeling geometry coupled to Monte-Carlo analyses, secondary ion mass spectrometry, X-ray diffraction and transmission electron microscopy. The damage accumulation and the elastic strain variation were interpreted in the framework of the multi-step damage accumulation (MSDA) model. Both build-ups follow a multi-step process similar to that recently observed for ion-irradiated yttria-stabilized zirconia (YSZ) single crystals. However, in MgO, an unexpectedly high disorder level occurs far beyond the theoretical damage distribution. These results strongly suggest that the migration of defects created in the near-surface layer is most likely at the origin of the broadening of the damage depth distribution in MgO.
Published: 2015
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20. Lattice strain in irradiated materials unveils a prevalent defect evolution mechanism

Author: Alain Chartier, Diana Bachiller-Perea, Frédérico Garrido, Thomas Jourdan, Alexandre Boulle, S. Pellegrino, Jean-Paul Crocombette, Jayanth Channagiri, Tien-Hien Nguyen, Aurélien Debelle, Denise Carpentier, Lionel Thomé, Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM), Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), Service de recherches de métallurgie physique (SRMP), Département des Matériaux pour le Nucléaire (DMN), CEA-Direction des Energies (ex-Direction de l'Energie Nucléaire) (CEA-DES (ex-DEN)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-CEA-Direction des Energies (ex-Direction de l'Energie Nucléaire) (CEA-DES (ex-DEN)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay, IRCER - Axe 3 : organisation structurale multiéchelle des matériaux (IRCER-AXE3), Institut de Recherche sur les CERamiques (IRCER), Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Service de la Corrosion et du Comportement des Matériaux dans leur Environnement (SCCME), Département de Physico-Chimie (DPC), Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Science des Procédés Céramiques et de Traitements de Surface (SPCTS), Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM PCI), and Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Saclay-Univ. Paris-Sud
Subjects: Diffraction, computation, Materials science, Physics and Astronomy (miscellaneous), 02 engineering and technology, 01 natural sciences, Atomic units, Ion, [SPI.MAT]Engineering Sciences [physics]/Materials, Molecular dynamics, strain, 0103 physical sciences, General Materials Science, 010306 general physics, ComputingMilieux_MISCELLANEOUS, defects, atomic scale, Strain (chemistry), irradiation, Relaxation (NMR), [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, Microstructure, X-ray diffraction, Chemical physics, Dislocation, 0210 nano-technology
Abstract: International audience; Modification of materials using ion beams has become a widespread route to improve or design materials for advanced applications, from ion doping for microelectronic devices to emulation of nuclear reactor environments. Yet, despite decades of studies, major issues regarding ion/solidinteractions are not solved, one of them being the lattice-strain development process in irradiated crystals. In this work, we address this question using a consistent approach that combines X-ray diffraction (XRD) measurements with both molecular dynamics (MD) and rate equation clusterdynamics (RECD) simulations. We investigate four distinct materials that differ notably in terms of crystalline structure and nature of the atomic bonding. We demonstrate that these materials exhibit a common behaviour with respect to the strain development process. In fact, a strain build-upfollowed by a strain relaxation is observed in the four investigated cases. The strain variation is unambiguously ascribed to a change in the defect configuration, as revealed by MD simulations. Strain development is due to the clustering of interstitial defects into dislocation loops, while the strain release is associated with the disappearance of these loops through their integration into a network of dislocation lines. RECD calculations of strain depth profiles, which are in agreement with experimental data, indicate that the driving force for the change in the defect nature is the defect clustering process. This study paves the way for quantitative predictions of the microstructure changes in irradiated materials.
Published: 2018
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21. Advanced techniques for characterization of ion beam modified materials

Author: Filip Tuomisto, Yanwen Zhang, Patrick Kluth, Alexandre Boulle, Aurélien Debelle, Materials Science and Technology Division [Oak Ridge], Oak Ridge National Laboratory [Oak Ridge] (ORNL), UT-Battelle, LLC-UT-Battelle, LLC, Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM), Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), Axe 3 : organisation structurale multiéchelle des matériaux (SPCTS-AXE3), Science des Procédés Céramiques et de Traitements de Surface (SPCTS), Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM), Department of Electronic Materials Engineering, Australian National University (ANU), Department of Applied Physics [Aalto], and Aalto University
Subjects: Diffraction, defect, irradiation damage, Materials science, Ion beam, ta221, Nanotechnology, 02 engineering and technology, Electron, 01 natural sciences, Ion, Positron annihilation spectroscopy, [SPI.MAT]Engineering Sciences [physics]/Materials, symbols.namesake, Materials Science(all), 0103 physical sciences, ion beam, General Materials Science, 010306 general physics, ComputingMilieux_MISCELLANEOUS, ta218, ta214, ta114, Scattering, [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, Rutherford backscattering spectrometry, symbols, positron, Atomic physics, 0210 nano-technology, Raman spectroscopy
Abstract: Understanding the mechanisms of damage formation in materials irradiated with energetic ions is essential for the field of ion-beam materials modification and engineering. Utilizing incident ions, electrons, photons, and positrons, various analysis techniques, including Rutherford backscattering spectrometry (RBS), electron RBS, Raman spectroscopy, high-resolution X-ray diffraction, small-angle X-ray scattering, and positron annihilation spectroscopy, are routinely used or gaining increasing attention in characterizing ion beam modified materials. The distinctive information, recent developments, and some perspectives in these techniques are reviewed. Applications of these techniques are discussed to demonstrate their unique ability for studying ion-solid interactions and the corresponding radiation effects in modified depths ranging from a few nm to a few tens of μm, and to provide information on electronic and atomic structure of the materials, defect configuration and concentration, as well as phase stability, amorphization and recrystallization processes. Such knowledge contributes to our fundamental understanding over a wide range of extreme conditions essential for enhancing material performance and also for design and synthesis of new materials to address a broad variety of future energy applications.
Published: 2015
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22. The amorphization of 3C-SiC irradiated at moderately elevated temperatures as revealed by X-ray diffraction

Author: J. B. Wallace, Alexandre Boulle, L. B. Bayu Aji, Sergei O. Kucheyev, Aurélien Debelle, IRCER - Axe 3 : organisation structurale multiéchelle des matériaux (IRCER-AXE3), Institut de Recherche sur les CERamiques (IRCER), Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse (CSNSM), Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11), Speed Laboratory, University of Galasgow, Axe 3 : organisation structurale multiéchelle des matériaux (SPCTS-AXE3), Science des Procédés Céramiques et de Traitements de Surface (SPCTS), Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), and Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)
Subjects: 010302 applied physics, Diffraction, Materials science, Polymers and Plastics, Metals and Alloys, Analytical chemistry, 02 engineering and technology, [CHIM.MATE]Chemical Sciences/Material chemistry, Atmospheric temperature range, 021001 nanoscience & nanotechnology, 01 natural sciences, Fluence, [SPI.MAT]Engineering Sciences [physics]/Materials, Electronic, Optical and Magnetic Materials, Ion, Crystal, Crystallography, 0103 physical sciences, X-ray crystallography, Ceramics and Composites, Radiation damage, Irradiation, 0210 nano-technology, ComputingMilieux_MISCELLANEOUS
Abstract: International audience; Mechanisms of radiation damage buildup in 3C-SiC remain poorly understood. Here, we use X-ray diffraction in combination with numerical simulations to study depth profiles of radiation-produced strain and lattice damage in 3C-SiC bombarded in the temperature range of 25-200 °C with 500 keV Ar ions. Results reveal increased defect recombination with increasing temperature, with a critical amorphization fluence increasing from 0.17 to 0.44 displacements per atom. The amorphization process is found to be correlated with the evolution of lattice strain. We find that, at fluences corresponding to the onset of amorphization, lattice strain is ~2% and is independent of temperature. With continuing bombardment above the onset of amorphization, the strain in the crystal bulk increases and reaches a saturation value that decreases from 7% to 5% with increasing temperature. Based on strain profiles, we compute depth profiles of the effective concentration of point defect clusters in the crystalline phase. Bombardment at higher temperatures results in lower maximum defect concentrations pointing to enhanced defect mobility. 1
Published: 2017
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23. Implantation of high concentration noble gases in cubic zirconia and silicon carbide: A contrasted radiation tolerance

Author: Gihan Velisa, Lionel Thomé, Jacek Jagielski, Alexandre Boulle, Laetitia Vincent, Dan Pantelica, Aurélien Debelle, and Stamatis Mylonas
Subjects: Nuclear and High Energy Physics, Materials science, Annealing (metallurgy), Metallurgy, Noble gas, Recrystallization (metallurgy), Microstructure, Ion, chemistry.chemical_compound, Atomic radius, Nuclear Energy and Engineering, chemistry, Silicon carbide, General Materials Science, Cubic zirconia, Composite material
Abstract: The modifications of the microstructure of yttria-stabilized cubic zirconia and silicon carbide single crystals implanted with high concentrations of noble gas ions and subsequently annealed at high temperature were characterized using RBS/C, XRD and TEM. It is found that the annealing behavior is strongly dependent on both the material and the implanted noble gases. Ar-implanted yttria-stabilized zirconia shows no significant microstructural modification upon annealing at 800 °C, e.g. dislocations are still present and the size of the Ar bubbles does not evolve. This is in strong contrast with previous observations on helium-implanted zirconia, where the formation of bubbles and elongated fractures were observed. In the case of SiC, thermal annealing at 1000 °C shows an enhanced damage recovery when He is implanted as compared to Ar implantation and the recrystallization of the matrix is accompanied with the release of noble gas atoms. This difference can be ascribed to different atomic radii, and thus mobility of implanted species.
Published: 2014
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24. Behavior of nuclear materials irradiated with a dual ion beam

Author: Aurélien Debelle, Sandrine Miro, Patrick Trocellier, Lionel Thomé, Yves Serruys, Gihan Velisa, F. Garrido, CEA-Direction des Energies (ex-Direction de l'Energie Nucléaire) (CEA-DES (ex-DEN)), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)
Subjects: Nuclear and High Energy Physics, High energy, Materials science, [PHYS.NUCL]Physics [physics]/Nuclear Theory [nucl-th], Ion beam, Oxide, Nuclear electronic synergy, Damage production, [PHYS.NEXP]Physics [physics]/Nuclear Experiment [nucl-ex], Molecular physics, Nuclear materials, Carbide, Ion, symbols.namesake, chemistry.chemical_compound, chemistry, Ion irradiation, symbols, Irradiation, Raman spectroscopy, Instrumentation, Excitation, Nuclear chemistry
Abstract: International audience; Synergistic effects of nuclear (Sn) and electronic (Se) energy losses are investigated by comparing the damage accumulated in selected oxide (c-ZrO2, MgO, Gd2Ti2O7) and carbide (SiC) single crystals irradiated with single and dual low and high energy ion beams. Channeling results show that the Sn/Se synergy induces a strong decrease of the damage in MgO and SiC (where amorphization is prevented) and almost no effects in c-ZrO2 and Gd2Ti2O7. Raman and TEM results confirm this statement. The healing of defects generated by nuclear collisions in MgO and SiC is due to the electronic excitation produced in the wake of swift ions. These results present a strong interest for technological applications in the nuclear industry where expected cooperative Sn/Se effects may preserve the integrity of nuclear materials.
Published: 2014
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25. Determination of strain and damage profiles in irradiated materials: Application to cubic zirconia irradiated at high temperature

Author: Alexandre Boulle, Aurélien Debelle, Jayanth Channagiri, Institut de Recherche sur les CERamiques (IRCER), Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), IRCER - Axe 3 : organisation structurale multiéchelle des matériaux (IRCER-AXE3), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut des Procédés Appliqués aux Matériaux (IPAM), Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM), Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), Institut de Chimie du CNRS (INC)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Institut des Procédés Appliqués aux Matériaux (IPAM), and Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11)
Subjects: Diffraction, Nuclear and High Energy Physics, Materials science, Strain (chemistry), Analytical chemistry, [CHIM.MATE]Chemical Sciences/Material chemistry, Fluence, Ion, Crystallography, Irradiated materials, X-ray crystallography, Cubic zirconia, Irradiation, Instrumentation
Abstract: International audience; A methodology is presented that allows to retrieve strain and damage profiles in irradiated single crystals. The approach makes use of high-resolution X-ray diffraction q-2q scans coupled with numerical simulations of the diffraction profiles. The potential of the method is illustrated with Cubic yttria-stabilized zirconia single crystals, irradiated with 4 MeV Au 2+ ions at different temperatures (25, 500 and 800°C). The simulations reveal that upon increasing ion fluence, the width of the damaged region increases and both the strain and damage levels inside this region increase. The damage build-up occurs according to a two-step mechanism: in the first step, the damage increases slowly up to a critical fluence, above which the second step takes place and is characterized by dramatic increase of the damage. The transition fluence is shifted towards lower values at higher temperatures.
Published: 2014
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26. Effects of thermal annealing on the evolution of He bubbles in zirconia

Author: Sha Yan, Tengfei Yang, Chenxu Wang, Gihan Velisa, A. Debelle, Yugang Wang, Shuyan Kong, Lionel Thomé, Jianming Xue, CSNSM PCI, Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM), Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), and Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Nuclear and High Energy Physics, Materials science, Irradiation stability, Thermal annealing, Annealing (metallurgy), Economies of agglomeration, Bubble, He bubbles, Fluence, Ion, Crystal, Crystallography, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Defects, Cubic zirconia, Liquid bubble, Composite material, Instrumentation
Abstract: Single crystals of yttria-stabilized zirconia were implanted with 100 keV He ions at two fluences of 9 × 1016 and 3 × 1017 cm−2 (5 and 17 He at.%). In order to investigate the effect of thermal annealing on the evolution of both zirconia lattice and implanted He, the samples were annealed at several temperatures ranging from 500 °C to 1400 °C. Three complementary analysis techniques, RBS/C, AFM and TEM were used to study structural damage and surface morphology of the crystal before and after implantation. Results show different He evolution phenomena under the two implantation fluences. It is inferred that, at the lower fluence, the migration and agglomeration of He ions lead to bubble formation after annealing. These bubbles jack up sample surface causing the deformation of surface region and the damage level of surface region increase accordingly. As the temperature continues to increase, He gradually releases and the damage recovers. However, at the higher fluence, the He concentration is sufficient to induce bubble precipitation without annealing. He release and damage recovering is less efficient upon annealing. 2014 Elsevier B.V. All rights reserved
Published: 2014
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27. Effect of combined local variations in elastic and inelastic energy losses on the morphology of tracks in ion-irradiated materials

Author: Aurélien Debelle, Stamatis Mylonas, Lionel Thomé, Bruce W. Arey, Gaël Sattonnay, Isabelle Monnet, I. Jozwik-Biala, Libor Kovarik, Jacek Jagielski, Institute of Electronic Materials Technology (IEMT), Institute of Electronic Materials Technology, Institut de Chimie Moléculaire et des Matériaux d'Orsay (ICMMO), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC), CSNSM PCI, Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse (CSNSM), Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11), Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11), Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Centre National de la Recherche Scientifique (CNRS)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Caen Normandie (UNICAEN), Normandie Université (NU), Université Paris-Sud - Paris 11 (UP11)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), and Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Materials science, Polymers and Plastics, SOLIDS, Mineralogy, High resolution transmission electron microscopy, 02 engineering and technology, PRESSURE, 01 natural sciences, Molecular physics, Focused ion beam, Ion, Crystal, Tracks, 0103 physical sciences, Atom, SWIFT HEAVY-IONS, 010306 general physics, Envelope (waves), DAMAGE, Ion track, Metals and Alloys, Elastic energy, INORGANIC INSULATORS, 021001 nanoscience & nanotechnology, Electronic, Optical and Magnetic Materials, MODEL, Core (optical fiber), Ion irradiation, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Ceramics and Composites, Defects, 0210 nano-technology, PYROCHLORE
Abstract: Detailed analysis of the morphology of latent tracks created by swift heavy ions from the surface entry point on a pyrochlore crystal to the end of the ion trajectory reveals continuous changes in the track diameter as a function of ion deceleration, loss of track parallelism beyond a certain depth and the evolution from continuous to discontinuous tracks. The tracks exhibit a layered structure composed of a non-crystalline core surrounded by a strained crystalline envelope. Furthermore, surprising local increases in the diameter of the latent tracks are readily observed. This feature can be interpreted using a model based on the concept of effective local energy deposition, defined as the sum of the inelastic energy deposited by the swift track-forming ion and the elastic energy deposited by a primary knock-on atom inside the ion track. (C) 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
Published: 2013
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28. Study of the initial stages of defect generation in ion-irradiated MgO at elevated temperatures using high-resolution X-ray diffraction

Author: Diana Bachiller-Perea, Jean-Paul Crocombette, Aurélien Debelle, Lionel Thomé, Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM PCI), Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Saclay-Univ. Paris-Sud, Service de recherches de métallurgie physique (SRMP), Département des Matériaux pour le Nucléaire (DMN), CEA-Direction des Energies (ex-Direction de l'Energie Nucléaire) (CEA-DES (ex-DEN)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-CEA-Direction des Energies (ex-Direction de l'Energie Nucléaire) (CEA-DES (ex-DEN)), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay
Subjects: Diffraction, Materials science, STRESS, Annealing (metallurgy), ENERGIES, Analytical chemistry, 02 engineering and technology, 01 natural sciences, Ion, 0103 physical sciences, Radiation damage, General Materials Science, Irradiation, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], MAGNESIUM-OXIDE, DISPLACEMENT, 010302 applied physics, [PHYS]Physics [physics], Mechanical Engineering, 021001 nanoscience & nanotechnology, Crystallographic defect, Crystallography, RADIATION-DAMAGE, Mechanics of Materials, CERAMICS, X-ray crystallography, Frenkel defect, POINT-DEFECTS, GROWTH, SINGLE-CRYSTALS, IMPLANTATION, 0210 nano-technology
Abstract: International audience; The initial stages of defect generation in magnesia (MgO) single crystals irradiated with 1.2 MeV Au+ ions at 573, 773, and 1073 K and at different fluences have been studied. High-resolution X-ray diffraction was used to measure the irradiation-induced elastic strain. Point-defect relaxation volumes were computed using density functional theory calculations. The defect concentration was then calculated. It was found to increase with ion fluence at all temperatures, with maximum values being similar to 0.46 % at 573 K, similar to 0.24 % at 773 K, and similar to 0.13 % at 1073 K. The decrease in the maximum strain with increasing temperature indicates a dynamic annealing. The defect generation efficiencies were found to be very low and the values obtained were in the range of similar to 2.4, 1.2, and 0.6 % at 573, 773, and 1073 K, respectively. An annealing effect due to electronic energy deposition is suspected to explain these low values.
Published: 2016
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29. Effect of temperature on the behavior of ion-irradiated cubic zirconia

Author: Lionel Thomé, Frédérico Garrido, Sandra Moll, A. Debelle, Gaël Sattonnay, Jacek Jagielski, CSNSM PCI, Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse (CSNSM), Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11), Institut de Chimie Moléculaire et des Matériaux d'Orsay (ICMMO), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC), Institute of Electronic Materials Technology (IEMT), Institute of Electronic Materials Technology, and The Andrzej Soltan Institute for Nuclear Studies
Subjects: Ceramics, Nuclear and High Energy Physics, Materials science, Analytical chemistry, 02 engineering and technology, 01 natural sciences, Ion, 0103 physical sciences, Cubic zirconia, Irradiation, Ceramic, Instrumentation, RBS, Yttria-stabilized zirconia, Channeling, 010302 applied physics, Range (particle radiation), 021001 nanoscience & nanotechnology, Rutherford backscattering spectrometry, Ion fluence, Crystallography, visual_art, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], visual_art.visual_art_medium, Zirconia, 0210 nano-technology
Abstract: Yttria-stabilized zirconia (YSZ) single crystals were irradiated with 4-MeV Au ions at several temperatures from RT up to 800 degrees C. For each temperature, the amount of damage created by irradiation was measured as a function of the ion fluence by Rutherford backscattering spectrometry in channeling geometry (RBS/C). In all cases the damage exhibits a peak around the ion projected range (similar to 500 nm) and it accumulates via a multi-step process. Furthermore, the damage build-up strongly depends on the irradiation temperature: the occurrence of the second stage of damage accumulation, which presents a high increase of the damage fraction, is shifted towards lower fluences as the temperature is increased. This effect may be explained by enhanced defect-clustering at high temperature. (C) 2011 Elsevier B.V. All rights reserved.
Published: 2012
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30. Thermal behaviour of helium-implanted spinel single crystals

Author: Alain Declémy, Lionel Thomé, Gihan Velisa, Laetitia Vincent, Stefan Antohe, Aurélien Debelle, D. Pantelica, Horia Hulubei National Institute of Physics and Nuclear Engineering (NIPNE), IFIN-HH, Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse (CSNSM), Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11), Institut Pprime (PPRIME), and ENSMA-Centre National de la Recherche Scientifique (CNRS)-Université de Poitiers
Subjects: Diffraction, Nuclear and High Energy Physics, Materials science, Annealing (metallurgy), MGAL2O4 SPINEL, Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, engineering.material, AMORPHIZATION, 01 natural sciences, Crystal, 0103 physical sciences, General Materials Science, Helium, DAMAGE, 010302 applied physics, Spinel, CUBIC ZIRCONIA, ION IRRADIATION, 021001 nanoscience & nanotechnology, Rutherford backscattering spectrometry, Microstructure, RADIATION STABILITY, EVOLUTION, Crystallography, INERT MATRICES, Nuclear Energy and Engineering, chemistry, Transmission electron microscopy, CERAMICS, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], engineering, MICROSTRUCTURE, 0210 nano-technology
Abstract: The study of the microstructural modifications induced in spinet implanted with (4)He(+) at 4.7 at.% and subsequently annealed at 1075 K is addressed in this paper. The combination of three analysis techniques Rutherford backscattering spectrometry in channeling geometry (RBS/C), X-ray diffraction and transmission electron microscopy was used in order to gain information about the damage depth distribution, the nature of radiation defects, and the occurrence of microstructural modifications. In as-implanted crystals the disorder level is weak, and the damage principally consists of small helium-vacancy clusters. These defects induce a tensile strain in the direction normal to the implanted crystal surface. After annealing, a surprising increase of the disorder level is measured by RBS/C. This increased backscattering yield is due to the formation of a particular type of He-vacancy clusters, namely He platelets, which also induce a relaxation of the strain. (C) 2010 Elsevier B.V. All rights reserved.
Published: 2011
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31. Effect of Grain Size on Mechanical Properties of Irradiated Mono- and Polycrystalline MgAl2O4

Author: Iwona Jozwik, A. Piatkowska, Sid Labdi, P. Aubert, M. Romaniec, Jacek Jagielski, Anna Wajler, Olek Maciejak, Marek Boniecki, Lionel Thomé, and Aurélien Debelle
Subjects: 010302 applied physics, Oxide minerals, Materials science, General Physics and Astronomy, External irradiation, Young's modulus, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Grain size, Charged particle, Ion, symbols.namesake, 0103 physical sciences, symbols, Crystallite, Irradiation, Composite material, 0210 nano-technology
Published: 2011
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32. Damage Accumulation in Nuclear Ceramics

Author: Jacek Jagielski, Lionel Thomé, F. Garrido, Gaël Sattonnay, Sandra Moll, and Aurélien Debelle
Subjects: High energy, Materials science, General Physics and Astronomy, Recrystallization (metallurgy), Radiation, Ion, Nuclear physics, Low energy, Swift heavy ion, visual_art, visual_art.visual_art_medium, Ceramic, Nuclear Experiment, Excitation
Abstract: tools to simulate the interactions involved during the slowing-down of energetic particles. This article presents a review of the radiation eects occurring in nuclear ceramics, with an emphasis on new results concerning the damage build-up. Ions with energies in the keV‐GeV range are considered for this study in order to explore both regimes of nuclear collisions (at low energy) and electronic excitations (at high energy). The recovery, by electronic excitation, of the damage created by ballistic collisions (swift heavy ion beam induced epitaxial recrystallization process) is also reported.
Published: 2011
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33. XRD investigation of the strain/stress state of ion-irradiated crystals

Author: A. Debelle, Alain Declémy, Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse (CSNSM), Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11), Institut Pprime (PPRIME), ENSMA-Centre National de la Recherche Scientifique (CNRS)-Université de Poitiers, Laboratoire de Physique des Matériaux (PhyMat), Université de Poitiers-Centre National de la Recherche Scientifique (CNRS), and Université de Poitiers-ENSMA-Centre National de la Recherche Scientifique (CNRS)
Subjects: Nuclear and High Energy Physics, Materials science, XRD, Radiation effects, 02 engineering and technology, Substrate (electronics), 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, Stress (mechanics), 0103 physical sciences, Radiation damage, Cubic zirconia, Irradiation, Composite material, Instrumentation, 010302 applied physics, Strain (chemistry), Stress–strain curve, 021001 nanoscience & nanotechnology, Crystallography, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Zirconia, Defects, Elastic strain, 0210 nano-technology, Single crystal
Abstract: In this work, it is demonstrated that XRD is a powerful technique for the study of ion-irradiated materials. For this purpose, XRD experiments have been performed under different configurations on a 〈1 0 0〉-oriented yttria-stabilized zirconia single crystal implanted with 300 keV caesium-ions at 3 × 1014 cm−2. Initially, it is demonstrated that the depth strain profile can be determined from the refinement of a symmetric θ–2θ scan. Moreover, in order to explore the whole XRD data, a model that describes the strain/stress state of the damaged layer is proposed. This model takes into account the elastic response of the bulk material (substrate) underneath the irradiated layer. The measured elastic strain is then the sum of a free strain due to the formation of radiation-induced defects and of an additional strain arising from the substrate elastic reaction. Application of this model allowed the calculation of the different strain contributions and the stress experienced by the irradiated layer. It is shown that these parameters may reach large values (respectively 0.7% and −1.9 GPa) despite the low radiation damage level.
Published: 2010
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34. XRD contribution to the study of Cs-implanted cubic zirconia

Author: Lionel Thomé, Laetitia Vincent, Frédérico Garrido, A. Debelle, Alain Declémy, Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse (CSNSM), Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11), Laboratoire de Physique des Matériaux (PhyMat), and Université de Poitiers-Centre National de la Recherche Scientifique (CNRS)
Subjects: Nuclear and High Energy Physics, INERT MATRIX, Materials science, CESIUM, 02 engineering and technology, 01 natural sciences, Fluence, [SPI.MAT]Engineering Sciences [physics]/Materials, Stress (mechanics), 0103 physical sciences, Radiation damage, General Materials Science, Cubic zirconia, OXIDES, Composite material, 010302 applied physics, Strain (chemistry), Stress–strain curve, Relaxation (NMR), 021001 nanoscience & nanotechnology, RADIATION-DAMAGE, Compressive strength, Nuclear Energy and Engineering, CERAMICS, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], 0210 nano-technology
Abstract: The radiation-induced damage in Cs-implanted cubic zirconia at room temperature has been investigated as a function of the fluence (from a few 10(13) to a few 10(16) cm(-2)) by means of XRD measurements. These experiments allowed determining the maximum strain and stress experienced by the damaged layers as well as the strain depth profiles. The radiation-induced elastic strain. localized along the direction normal to the implanted sample surface, is positive. It induces an in-plane compressive stress which reaches -1.6 GPa before relaxation. This strain essentially comes from ballistic collisions generating interstitial-type defects, but a contribution due to Cs incorporation into the matrix should also be taken into account. XRD data have been confronted to results previously obtained by RBS/C and TEM experiments. A strong correlation between the evolution of the normal strain and of the disorder level measured by RBS/C is clearly established. In particular, the relaxation of the stored elastic strain takes place concomitantly with the microstructural evolution evidenced by the RBS/C damage build-up and imaged by TEM. Besides, the width of the strain depth profiles indicates that the strained layer is broader than the damaged thickness revealed by RBS/C and TEM analyses. (C) 2009 Elsevier B.V. All rights reserved.
Published: 2010
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35. Helium desorption in 3He implanted tungsten at low fluence and low energy

Author: A. Debelle, P.E. Lhuillier, Thierry Sauvage, M.F. Barthe, and Pierre Desgardin
Subjects: Nuclear and High Energy Physics, Materials science, Annealing (metallurgy), chemistry.chemical_element, Tungsten, Atmospheric temperature range, chemistry, Desorption, Nuclear reaction analysis, Helium-3, Atomic physics, Instrumentation, Isotopes of helium, Helium
Abstract: The behaviour of helium in polycrystalline 3He implanted tungsten at low energy (60 keV) and low fluence (2 × 1013 cm−2) has been studied as a function of post-implantation annealing temperature until 1873 K by means of Nuclear Reaction Analysis. Helium desorption has been observed only from ∼1500 K, suggesting a helium trapping at mono-vacancies. Only ∼75% of the implanted helium has been released after the annealing during 1 h at high temperature (1873 K); besides, the desorption rate decreased from 1673 K. The presence of a second type of helium trapping site is likely to explain this strong helium retention.
Published: 2010
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36. First temperature stage evolution of irradiation-induced defects in tungsten studied by positron annihilation spectroscopy

Author: Thierry Sauvage, A. Debelle, and Marie-France Barthe
Subjects: Nuclear and High Energy Physics, Materials science, Annealing (metallurgy), chemistry.chemical_element, Tungsten, Fluence, Positron annihilation spectroscopy, Nuclear physics, Positron, Nuclear Energy and Engineering, chemistry, Vacancy defect, General Materials Science, Irradiation, Atomic physics, Doppler broadening
Abstract: The behaviour of vacancy like implantation-induced defects created in the track region of 800 keV 3 He ions in polycrystalline tungsten was studied by Doppler broadening spectroscopy as a function of annealing temperature. A slow positron beam, coupled with a Doppler broadening spectrometer, was used to measure the low- and high-momentum annihilation fractions, S and W , respectively, as a function of positron energy in tungsten samples implanted at different fluences from 10 14 to 5 × 10 16 cm −2 . The behaviour of the S ( E ), W ( E ) and S ( W ) plots with the annealing temperature clearly indicates that the irradiation-induced vacancy like defects begin to evolve between 523 and 573 K, whatever the implantation fluence. This first temperature stage evolution corresponds to the migration of the monovacancies created during implantation to form larger vacancy like defects of which depth profile is different from the initial radiation-induced defects one.
Published: 2008
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37. RaDMaX: a graphical program for the determination of strain and damage profiles in irradiated crystals

Author: M. Souilah, Aurélien Debelle, Alexandre Boulle, Axe 3 : organisation structurale multiéchelle des matériaux (SPCTS-AXE3), Science des Procédés Céramiques et de Traitements de Surface (SPCTS), Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM), Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), Institut des Matériaux Jean Rouxel (IMN), Université de Nantes - UFR des Sciences et des Techniques (UN UFR ST), Université de Nantes (UN)-Université de Nantes (UN)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Ecole Polytechnique de l'Université de Nantes (EPUN), Université de Nantes (UN)-Université de Nantes (UN), IRCER - Axe 3 : organisation structurale multiéchelle des matériaux (IRCER-AXE3), Institut de Recherche sur les CERamiques (IRCER), Institut des Procédés Appliqués aux Matériaux (IPAM), and Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut des Procédés Appliqués aux Matériaux (IPAM)
Subjects: Diffraction, Materials science, 02 engineering and technology, 01 natural sciences, Least squares, General Biochemistry, Genetics and Molecular Biology, [SPI.MAT]Engineering Sciences [physics]/Materials, computer program, X-ray diffraction, Irradiation, Strain gradients, Damage gradients, Optics, computer program, 0103 physical sciences, Radiation damage, 010302 applied physics, Computer program, Strain (chemistry), business.industry, Experimental data, [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, Strain gradients, Damage gradients, Computational physics, X-ray diffraction, X-ray crystallography, Simulated annealing, Irradiation, 0210 nano-technology, business, [CHIM.RADIO]Chemical Sciences/Radiochemistry
Abstract: RaDMaX(radiation damage in materials analysed with X-ray diffraction) is a user-friendly graphical program that allows the determination of strain and damage depth profiles in ion-irradiated crystals. This task is achieved by fitting experimental X-ray diffraction data, recorded in symmetrical θ–2θ geometry, with a dynamical diffraction model parametrized with variable strain and damage profiles based onB-spline functions. The strain and damage profiles can be graphically manipulated so as to fit the calculated curve to the experimental data. Automatic fitting procedures (generalized simulated annealing and conventional least squares) are also implemented.RaDMaXis free and open source (CeCILL licence) and can be downloaded from http://aboulle.github.io/RaDMaX.
Published: 2016
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38. Statistical Nature of Atomic Disorder in Irradiated Crystals

Author: Alexandre Boulle, Aurélien Debelle, IRCER - Axe 3 : organisation structurale multiéchelle des matériaux (IRCER-AXE3), Institut de Recherche sur les CERamiques (IRCER), Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse (CSNSM), and Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11)
Subjects: 010302 applied physics, Diffraction, Range (particle radiation), Materials science, Gaussian, General Physics and Astronomy, 02 engineering and technology, [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, Molecular physics, Displacement (vector), Crystal, symbols.namesake, Molecular dynamics, 0103 physical sciences, symbols, Irradiation, 0210 nano-technology, Dimensionless quantity
Abstract: International audience; Atomic disorder in irradiated materials is investigated by means of X-ray diffraction (XRD), using cubic SiC single crystals as a model material. It is shown that, besides the determination of depth-resolved strain and damage profiles, XRD can be efficiently used to determine the probability density function (pdf) of the atomic displacements within the crystal. This task is achieved by analyzing the diffraction-order dependence of the damage profiles. We thereby demonstrate that atomic displacements undergo Lévy flights, with a displacement pdf exhibiting heavy tails (with a tail index in the γ = 0.73-0.37 range, i.e. far from the commonly assumed Gaussian case (γ = 2)). It is further demonstrated that these heavy tails are crucial to account for the amorphization kinetics in SiC. From the retrieved displacement pdfs we introduce a dimensionless parameter, f D XRD , to quantify the disordering. f D XRD is found to be consistent with both independent measurements using ion channeling and with molecular dynamics calculations.
Published: 2016
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39. Helium behaviour and vacancy defect distribution in helium implanted tungsten

Author: Marie-France Barthe, A. Chelgoum, Hicham Labrim, Thierry Sauvage, R. Belamhawal, Pierre Desgardin, and A. Debelle
Subjects: Nuclear and High Energy Physics, Materials science, Annealing (metallurgy), chemistry.chemical_element, Tungsten, Fluence, Molecular physics, Positron annihilation spectroscopy, Nuclear physics, Nuclear Energy and Engineering, chemistry, Nuclear reaction analysis, Vacancy defect, General Materials Science, Crystallite, Helium
Abstract: The distribution and the nature of 3He implantation-induced defects in polycrystalline tungsten samples were studied by Positron Annihilation Spectroscopy as a function of implantation fluence. The implanted helium profile was determined by Nuclear Reaction Analysis, and its evolution under different thermal annealings was investigated. Results show that vacancy-like defects are generated along the path of the ions and that their concentration varies directly as the implantation fluence. No helium desorption was observed under any thermal treatments. However, a change in 3He depth profile under specific annealing conditions suggests the formation of nanometric-size He bubbles.
Published: 2007
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40. Stress and Intermixing in Epitaxial Ni(111)/Mo(110) Superlattices

Author: C. Jaouen, Aurélien Debelle, A. Michel, and Gregory Abadias
Subjects: Radiation, Materials science, Condensed matter physics, Superlattice, Sputter deposition, Condensed Matter Physics, Stress (mechanics), Crystallography, Lattice constant, Residual stress, Ultimate tensile strength, Stress relaxation, General Materials Science, Irradiation
Abstract: The stress state and intermixing in epitaxial Ni/Mo multilayers grown on (11 2 0) sapphire substrates are investigated using X-ray Diffraction (XRD). Two deposition techniques were used, namely ion beam sputtering (IBS) and magnetron sputtering (MS), to vary the energy of the deposited species. In both cases, high-quality superlattices with a Nishiyama-Wasserman epitaxial relationship Ni [110] (111) // Mo [001] (110) were obtained. The residual stress state appears rather complex, resulting from two contributions: a growth-stress whose magnitude and sign depend on growth conditions and coherency stresses of opposite signs in the two elemental sublayers (tensile for Ni and compressive for Mo). Post-growth ion irradiation at low fluences was used to induce structural changes in a controlled way. For the case of IBS, it resulted in partial stress relaxation, as the growth stress could be almost fully relaxed, while the coherency stresses remained unchanged. For the case of MS, a distinct behavior was found: a stress increase of the tensile component of Mo-sublayers was observed, while a stress reduction of the compressive component was noticed. We attribute this phenomenon to ion irradiation induced intermixing. For the Ni sublayers, this intermixing leads to a stress relaxation. The modeling of the stress evolution during ion irradiation was performed using a triaxial stress analysis which enabled us to determine the ‘stress-free and defect-free lattice parameter’, solely linked to chemical effect.
Published: 2007
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41. Diffuse X-ray scattering from ion-irradiated materials: A parallel-computing approach

Author: Alexandre Boulle, Aurélien Debelle, Jayanth Channagiri, IRCER - Axe 3 : organisation structurale multiéchelle des matériaux (IRCER-AXE3), Institut de Recherche sur les CERamiques (IRCER), Institut de Chimie du CNRS (INC)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse (CSNSM), and Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11)
Subjects: Materials science, business.industry, Scattering, Monte Carlo method, Fast Fourier transform, [CHIM.MATE]Chemical Sciences/Material chemistry, General Biochemistry, Genetics and Molecular Biology, Ion, Computational physics, Crystal, Reciprocal lattice, Optics, Displacement field, business, Single crystal
Abstract: A computational method for the evaluation of the two-dimensional diffuse X-ray scattering distribution from irradiated single crystals is presented. A Monte Carlo approach is used to generate the displacement field in the damaged crystal. This step makes use of vector programming and multiprocessing to accelerate the computation. Reciprocal space maps are then computed using GPU-accelerated fast Fourier transforms. It is shown that this procedure speeds up the calculation by a factor of ∼190 for a crystal containing 109unit cells. The potential of the method is illustrated with two examples: the diffuse scattering from a single crystal containing (i) a non-uniform defect depth distribution (with a potentially bimodal defect size distribution) and (ii) spatially correlated defects exhibiting either long-range or short-range ordering with varying positional disorder.
Published: 2015
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42. Ion-irradiation induced stress relaxation in metallic thin films and multilayers grown by ion beam sputtering

Author: A. Michel, C. Jaouen, Gregory Abadias, and A. Debelle
Subjects: Stress (mechanics), Nuclear and High Energy Physics, Crystallography, Materials science, Condensed matter physics, Sputtering, Stress relaxation, Relaxation (physics), Irradiation, Hydrostatic stress, Instrumentation, Crystallographic defect, Ion
Abstract: The stress state of Mo layers in Ni/Mo multilayers was investigated and its evolution under ion beam irradiation was monitored using the “sin2 ψ” method. The growth stress in the Mo sub-layers was found to be consistent with a hydrostatic state of stress, accounting for the local deformations due to point defects induced during the sputter growth process. The hydrostatic stress is also responsible for a biaxial stress component appearing in the multilayer that is attached to the substrate, an additional stress component which is superimposed to the coherency stress developed due to epitaxial growth of the multilayers. Ion-irradiation of multilayers results in partial stress relaxation at low fluences, as the growth stress can be almost fully relaxed, while the coherency stresses remain unchanged. That is due to the system’s state, the growth stress is far from thermodynamic equilibrium, the coherency stress is close-to-equilibrium. The employed method, combining X-ray diffraction strain analysis and ion irradiation-induced relaxation, in addition to identifying the chemical effects contribution, proved to be a unique tool for recognising and distinguishing stress contributions.
Published: 2006
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43. Mechanical response of UO2 single crystals submitted to low-energy ion irradiation

Author: Alexandre Boulle, Lionel Thomé, Frédérico Garrido, Valérie Demange, Tien-Hien Nguyen, Aurélien Debelle, Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM PCI), Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Saclay-Univ. Paris-Sud, Axe 3 : organisation structurale multiéchelle des matériaux (SPCTS-AXE3), Science des Procédés Céramiques et de Traitements de Surface (SPCTS), Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Institut des Sciences Chimiques de Rennes (ISCR), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), We are grateful to the Semiramis staff for their help during irradiations. One of us (T.H. Nguyen) acknowledges the Ecole Doctorale MIPEGE at the Université Paris-Sud for financial support during his PhD thesis., Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM), Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), and Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)
Subjects: Diffraction, Nuclear and High Energy Physics, Materials science, XRD, elastic strain, 61.80.Jh, 62.20.D, 02 engineering and technology, UO2, 01 natural sciences, Fluence, Ion, Lattice constant, 0103 physical sciences, [CHIM]Chemical Sciences, General Materials Science, Irradiation, Composite material, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, PACS, [PHYS]Physics [physics], Range (particle radiation), Strain (chemistry), Relaxation (NMR), 021001 nanoscience & nanotechnology, Crystallography, 61.05.cp, Nuclear Energy and Engineering, 61.72.J, 61.72.Dd, radiation effects, Defects, 0210 nano-technology
Abstract: International audience; {111}- and {100}-oriented UO2 single crystals were irradiated with 500-keV Ce3+ ions in the 1014 - 9x1014 cm-2 fluence range. The irradiation-induced strain was monitored using high-resolution X-ray diffraction. A mechanical modelling dedicated to thin irradiated layers was applied to account for the reaction of the unirradiated part of the crystals. The elastic strain, which is confined along the surface normal of the samples, increases with ion fluence until it is dramatically relieved. This behaviour is observed for both orientations. While the measured elastic strain depends on the crystallographic direction, the strain due to irradiation defects only is found to be equal for both directions, with a maximum value of ∼0.5%. Strain relaxation takes place at the damage peak, but the in-plane lattice parameter of the irradiated layer remains unchanged and equal to that of the pristine material. Meanwhile, the strain at the damaged/pristine interface continues to increase.
Published: 2015
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44. Depth-dependent phase change in Gd2O3 epitaxial layers under ion irradiation

Author: Rytis Dargis, Andrew G. Clark, Gaël Sattonnay, N. Mejai, Alexandre Boulle, Lionel Thomé, D. Gosset, Aurélien Debelle, Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM), Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11), Institut de Chimie Moléculaire et des Matériaux d'Orsay (ICMMO), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC), Service des Recherches Métallurgiques Appliquées (SRMA), Département des Matériaux pour le Nucléaire (DMN), CEA-Direction des Energies (ex-Direction de l'Energie Nucléaire) (CEA-DES (ex-DEN)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-CEA-Direction des Energies (ex-Direction de l'Energie Nucléaire) (CEA-DES (ex-DEN)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay, IRCER - Axe 3 : organisation structurale multiéchelle des matériaux (IRCER-AXE3), Institut de Recherche sur les CERamiques (IRCER), Institut de Chimie du CNRS (INC)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), Université Paris-Sud - Paris 11 (UP11)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut des Procédés Appliqués aux Matériaux (IPAM), and Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Diffraction, Crystallography, Materials science, Thin layers, Physics and Astronomy (miscellaneous), Phase (matter), X-ray crystallography, Irradiation, [CHIM.MATE]Chemical Sciences/Material chemistry, Thin film, Molecular physics, Fluence, Ion
Abstract: International audience; Epitaxial Gd2O3 thin layers with the cubic structure were irradiated with 4-MeV Au 2+ ions in the 10 13-10 15 cm-2 fluence range. X-ray diffraction indicates that ion irradiation induces a cubic to monoclinic phase change. Strikingly, although the energy-deposition profile of the Au 2+ ions is constant over the layer thickness, this phase transformation is depth-dependent, as revealed by a combined X-ray diffraction and ion channeling analysis. In fact, the transition initiates very close to the surface and propagates inwards, which can be explained by an assisted migration process of irradiation-induced defects. This result is promising for developing a method to control the thickness of the rare-earth oxide crystalline phases.
Published: 2015
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45. Interplay between atomic disorder, lattice swelling, and defect energy in ion-irradiation-induced amorphization of SiC

Author: Aurélien Debelle, Alain Chartier, Fei Gao, Alexandre Boulle, William J. Weber, Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM), Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11), IRCER - Axe 3 : organisation structurale multiéchelle des matériaux (IRCER-AXE3), Institut de Recherche sur les CERamiques (IRCER), Institut de Chimie du CNRS (INC)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), Service de la Corrosion et du Comportement des Matériaux dans leur Environnement (SCCME), Département de Physico-Chimie (DPC), CEA-Direction des Energies (ex-Direction de l'Energie Nucléaire) (CEA-DES (ex-DEN)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-CEA-Direction des Energies (ex-Direction de l'Energie Nucléaire) (CEA-DES (ex-DEN)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay, Department of Nuclear Engineering and Radiological Sciences, University of Michigan., University of Michigan [Ann Arbor], University of Michigan System-University of Michigan System, Department of Materials Science and Engineering [Knoxville], The University of Tennessee [Knoxville], Materials Science and Technology Division [Oak Ridge], Oak Ridge National Laboratory [Oak Ridge] (ORNL), UT-Battelle, LLC-UT-Battelle, LLC, Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut des Procédés Appliqués aux Matériaux (IPAM), and Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Diffraction, Coalescence (physics), Materials science, Elastic energy, [CHIM.MATE]Chemical Sciences/Material chemistry, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Crystallographic defect, Molecular physics, Electronic, Optical and Magnetic Materials, Ion, 0103 physical sciences, X-ray crystallography, Radiation damage, Irradiation, 010306 general physics, 0210 nano-technology
Abstract: International audience; A combination of experimental and computational evaluations of disorder level and lattice swelling in ion-irradiated materials is presented. Information obtained from X-ray diffraction experiments is compared to X-ray diffraction data generated using atomic-scale simulations. The proposed methodology, which can be applied to a wide range of crystalline materials, is used to study the amorphization process in irradiated SiC. Results show that this process can be divided into two steps. In the first step, point defects and small defect clusters are produced and generate both large lattice swelling and high elastic energy. In the second step, enhanced coalescence of defects and defect clusters occurs to limit this increase in energy, which rapidly leads to complete amorphization. 2
Published: 2014
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46. Swift heavy ion induced recrystallization in cubic silicon carbide: New insights from designed experiments and MD simulations

Author: Lionel Thomé, F. Garrido, Olli H. Pakarinen, William J. Weber, Isabelle Monnet, F. Paumier, Flyura Djurabekova, Kai Nordlund, Marie Backman, Aurélien Debelle, CSNSM PCI, Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM), Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11), Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11), Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Centre National de la Recherche Scientifique (CNRS)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Caen Normandie (UNICAEN), Normandie Université (NU), Institut Pprime (PPRIME), Université de Poitiers-ENSMA-Centre National de la Recherche Scientifique (CNRS), Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), and Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)
Subjects: SiC, Nuclear and High Energy Physics, Materials science, Kinetics, Analytical chemistry, Recrystallization (metallurgy), Recrystallization, 7. Clean energy, Fluence, Ion, Amorphous solid, Swift heavy ion, chemistry.chemical_compound, Crystallography, chemistry, Silicon carbide, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Irradiation, Instrumentation
Abstract: 3C-SiC single crystals have been initially irradiated in the nuclear energy loss regime with 100 keV Fe ions to fluences ranging from 4 × 1013 to 4 × 1014 cm−2 (i.e. 0.07-0.7 dpa). RBS/C measurements indicate that SiC rapidly becomes amorphous (at ∼0.4 dpa). Two damaged SiC crystals exhibiting a different defective structure have been subsequently irradiated in the electronic energy loss regime with 870 MeV swift heavy (Pb) ions (SHIs) up to a fluence of 4 × 1013 cm−2. Initially fully amorphous SiC layers showed a decrease in size after SHI irradiation with a recrystallization occurring at the amorphous-crystalline interface. On the contrary, partially amorphous crystals for which onset of amorphization just initiated at the damage peak recovered over the entire damage thickness. Variation of amorphous thickness or disorder level has been monitored as a function of Pb ion fluence, which allowed deriving recrystallization kinetics. Data have been fitted with the direct-impact model and recrystallization cross-sections and threshold values for recovery have been determined for both types of initially defective structures. Differences are qualitatively discussed in terms of nature and density of irradiation defects. All experimental trends have been successfully reproduced by molecular dynamics simulations that mimicked thermal spikes induced by SHIs.
Published: 2013
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47. Radiation effects in carbides: TiC and ZrC versus SiC

Author: Lionel Thomé, P. Trocellier, S. Pellegrino, Sandrine Miro, Aurélien Debelle, Service de recherches de métallurgie physique (SRMP), Département des Matériaux pour le Nucléaire (DMN), CEA-Direction des Energies (ex-Direction de l'Energie Nucléaire) (CEA-DES (ex-DEN)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-CEA-Direction des Energies (ex-Direction de l'Energie Nucléaire) (CEA-DES (ex-DEN)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay, CSNSM PCI, Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM), Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11), Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11), Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), and Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)
Subjects: SiC, RBS-C, Nuclear and High Energy Physics, TiC, Materials science, Nuclear fuel, XRD, Metallurgy, ZrC, Crystal structure, Radiation, 7. Clean energy, Fluence, Carbide, Ion, symbols.namesake, Chemical engineering, Raman spectroscopy, symbols, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Irradiation, Instrumentation
Abstract: The aim of this paper is to provide, in the framework of the use of carbides for nuclear fuel applications, a comparison of the effects of irradiation observed in TiC and ZrC with those already widely investigated in SiC. To achieve this goal, the three carbides (SiC, TiC, ZrC) were simultaneously irradiated at room temperature with 1.2 MeV Au ions at several fluences. The damage created by irradiation was evaluated by RBS-C, XRD and Raman experiments. The results indicate a drastic difference between TiC and ZrC versus SiC. Whereas amorphization is readily achieved for SiC at low Au fluence (between 5 × 1013 and 1.7 × 1014 cm−2), TiC and ZrC maintain their crystalline structure at the highest Au fluence used (7 × 1015 cm−2). Ionicity character of bondings as well as topological criteria in TiC and ZrC, as compared to SiC, could play a major role for preventing amorphization in the former two carbides.
Published: 2013
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48. Stress field in sputtered thin films: Ion irradiation as a tool to induce relaxation and investigate the origin of growth stress

Author: A. Michel, Aurélien Debelle, Gregory Abadias, and C. Jaouen
Subjects: Stress field, Stress (mechanics), Crystallography, Lattice constant, Materials science, Physics and Astronomy (miscellaneous), Condensed matter physics, Stress relaxation, Biaxial tensile test, Relaxation (physics), Irradiation, Sputter deposition
Abstract: The stress state of sputtered Mo thin films was studied, and a detailed analysis of elastic strains, using x-ray diffraction and the “sin2 Ψ method,” was performed. The evolution of the lattice parameter under ion irradiation showed that the usual assumption of a biaxial stress state is not adequate to determine the true stress-free lattice parameter a0 of the film. An original stress model, including a hydrostatic component linked to volume distortions induced by point defects, is required. This model, which describes a triaxial stress field, allows a reliable determination of a0. Furthermore, ion irradiation was shown to be a powerful method for stress relaxation, providing a stress-free lattice parameter solely linked to chemical effects.
Published: 2004
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49. Influence of elastic properties on the strain induced by ion irradiation in crystalline materials

Author: J. Moeyaert, Frédérico Garrido, A. Debelle, Alexandre Boulle, Lionel Thomé, F. Rakotovao, C. Bachelet, CSNSM PCI, Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse (CSNSM), Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11), Axe 3 : organisation structurale multiéchelle des matériaux (SPCTS-AXE3), Science des Procédés Céramiques et de Traitements de Surface (SPCTS), Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM), Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11), CSNSM SEMI, Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM), IRCER - Axe 3 : organisation structurale multiéchelle des matériaux (IRCER-AXE3), Institut de Recherche sur les CERamiques (IRCER), Institut de Chimie du CNRS (INC)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Institut des Procédés Appliqués aux Matériaux (IPAM), and Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Materials science, Acoustics and Ultrasonics, mechanical & thermal, 02 engineering and technology, 01 natural sciences, Ion, chemistry.chemical_compound, symbols.namesake, 0103 physical sciences, Cubic zirconia, Van der Waals radius, Irradiation, Ceramic, Composite material, Condensed matter: structural, Anisotropy, 010302 applied physics, Relaxation (NMR), [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Crystallography, chemistry, visual_art, visual_art.visual_art_medium, Strontium titanate, symbols, 0210 nano-technology
Abstract: International audience; Cubic zirconia, an elastically anisotropic material, has been irradiated with 300 keV Cs+ ions and the irradiation-induced elastic strain has been measured using x-ray diffraction (XRD). In order to highlight the influence of the elastic properties on the strain level, two different cases have been investigated: (i) {1 0 0} versus {1 1 1}-oriented zirconia single crystals and (ii) {1 0 0} zirconia versus {1 0 0} strontium titanate. In the former case, raw experimental results show that the {1 0 0} planes deform less than the {1 1 1} planes. However, with a modelling that takes into account the effect of the elastic properties, it is demonstrated that the strain due to irradiation defects only is the same for both orientations (with a maximum value of ~0.8%). Combined use of this modelling and of a dedicated computer program for fitting XRD data allowed determining both defect concentration (~1%) and relaxation volume (~0.5 atomic volume). In the latter case, it is shown that elastic properties affect the measured strain in irradiated zirconia and strontium titanate. However, a difference between the two materials remains even taking into account this effect, confirming that different compounds of a same class of materials (namely ceramic oxides) can exhibit a different response to ion irradiation
Published: 2013
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50. Combined effects of nuclear and electronic energy losses in solids irradiated with a dual-ion beam

Author: Patrick Trocellier, Sandrine Miro, Yves Serruys, Aurélien Debelle, Gihan Velisa, Lionel Thomé, Frédérico Garrido, CSNSM PCI, Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse (CSNSM), Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), Service de recherches de métallurgie physique (SRMP), Département des Matériaux pour le Nucléaire (DMN), CEA-Direction des Energies (ex-Direction de l'Energie Nucléaire) (CEA-DES (ex-DEN)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-CEA-Direction des Energies (ex-Direction de l'Energie Nucléaire) (CEA-DES (ex-DEN)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay, Horia Hulubei National Institute of Physics and Nuclear Engineering (NIPNE), IFIN-HH, Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11), and Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11)
Subjects: Materials science, Physics and Astronomy (miscellaneous), Ion beam, Oxide, WASTE, PLUTONIUM, 02 engineering and technology, Channelling, 01 natural sciences, 7. Clean energy, Carbide, Ion, chemistry.chemical_compound, 0103 physical sciences, Irradiation, MAGNESIUM-OXIDE, 010302 applied physics, ZIRCONIA, Electron energy loss spectroscopy, Wide-bandgap semiconductor, MGO, 021001 nanoscience & nanotechnology, RADIATION-DAMAGE, chemistry, IMMOBILIZATION, CERAMICS, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], SINGLE-CRYSTALS, IMPLANTATION, Atomic physics, 0210 nano-technology
Abstract: Single and dual-beam irradiations of oxide (c-ZrO2, MgO, Gd2Ti2O7) and carbide (SiC) single crystals were performed to study combined effects of nuclear (S-n) and electronic (S-e) energy losses. Rutherford backscattering experiments in channeling conditions show that the S-n/S-e cooperation induces a strong decrease of the irradiation-induced damage in SiC and MgO and almost no effects in c-ZrO2 and Gd2Ti2O7. The healing process is ascribed to electronic excitations arising from the electronic energy loss of swift ions. These results present a strong interest for both fundamental understanding of the ion-solid interactions and technological applications in the nuclear industry where expected cooperative S-n/S-e effects may lead to the preservation of the integrity of nuclear devices. (C) 2013 AIP Publishing LLC.
Published: 2013
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