1. 0.01–22-GHz Feedback-Stabilized Single-Supply GaAs Cascode Distributed Amplifiers
- Author
-
Zoya Popovic, Gregor Lasser, and Akim A. Babenko
- Subjects
Materials science ,business.industry ,Flatness (systems theory) ,Amplifier ,Transistor ,Distributed amplifier ,High-electron-mobility transistor ,Integrated circuit ,Condensed Matter Physics ,Die (integrated circuit) ,law.invention ,law ,Optoelectronics ,Cascode ,Electrical and Electronic Engineering ,business - Abstract
This letter presents the design of five-cell cascode distributed amplifiers (DAs) in the WIN Semiconductor PIH1-10 enhancement-mode GaAs pHEMT process. Single- and two-stage DA monolithic microwave integrated circuits (MMICs) are demonstrated, with die areas not exceeding 2.5 x 1.5 mm² and same-polarity supply and bias voltages. The cascode cells are stabilized using an RC drain-gate feedback network at the common-gate transistor of each cell, and a stability analysis is presented. All transistors have a gate width of 2 μm x 75-μm, with 750-μm total common-source gate periphery per single-stage design. The measured small-signal gain is 11.5 dB with 2.6 dB flatness and 23.2 dB with 3.2 dB flatness for the one- and two-stage amplifiers, respectively, from 10 MHz to 22 GHz. The amplifiers produce over 20-dBm output power at 3-dB gain saturation across the band.
- Published
- 2021