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Abstract: Cadmium indate films were deposited by dc reactive magnetron sputtering onto glass substrates in an oxygen partial pressure of 5×10−4 mbar and at various substrate temperatures in the range 373–673 K. The influence of substrate temperature on the structural, electrical and optical properties of the films was systematically studied. The films formed at substrate temperatures <423 K were amorphous while those deposited at ≥423 K were polycrystalline with cubic spinel structure. The decrease of electrical resistivity and increase of Hall mobility with the increase of substrate temperature were due to the improvement in the crystallinity of the films. The temperature dependence of Hall mobility measurements indicated that the grain boundary scattering of charge carriers was predominant in the films. The films formed at a substrate temperature of 673 K exhibited an electrical resistivity of 3.5×10−4 Ω cm, Hall mobility of 29 cm2 V−1 s−1, optical transmittance of 88%, optical band gap of 3.28 eV and figure of merit of 5×10−2 Ω−1. [Copyright &y& Elsevier]

Abstract: Thin films of cuprous oxide (Cu2O) were deposited on glass substrates at various bias voltages using DC reactive magnetron sputtering technique. The effects of substrate bias voltage on structural, electrical and optical properties were systematically analyzed. The crystallographic structure and orientation of the crystallites were strongly influenced by the bias voltage. [Copyright &y& Elsevier]

Transparent conducting cadmium indate films were deposited at different oxygen partial pressures in the range from 1×10−4 to 5×10−3 mbar onto glass substrates maintained at a temperature of 523 K by dc magnetron sputtering from a cadmium–indium alloy target at a sputtering pressure of 4×10−2 mbar. The films were characterised by studying the influence of oxygen partial pressure on the structural, electrical and optical properties. Cadmium indate films formed at an oxygen partial pressure of 5×10−4 mbar were polycrystalline with cubic spinel structure, low electrical resistivity of 1.2×10−3 Ω cm, high optical transmittance of 87% in the visible region, optical band gap of 3.23 eV and a figure of merit of 1.8×10−3 Ω−1. [Copyright &y& Elsevier]