1. Reproducibility and stability of N–Al codoped p-type ZnO thin films.
- Author
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Lu, J. G., Zhu, L. P., Ye, Z. Z., Zhuge, F., Zhao, B. H., D. W. Ma, Wang, L., and Huang, J. Y.
- Subjects
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THIN films , *X-ray diffraction , *ZINC oxide , *SECONDARY ion mass spectrometry , *SEMICONDUCTORS , *MAGNETRONS - Abstract
Reproducible and stable p-type ZnO thin films have been prepared by the N–Al codoping method. Secondary ion mass spectroscopy measurements demonstrate that N and Al are incorporated into ZnO. The resistivity, carrier concentration, and Hall mobility are typically of 50–100 Ωcm, 1×1017–8×1017 cm−3, and 0.1–0.6 cm2/Vs, respectively, for the N–Al codoped p-type ZnO films. Hall measurement, X-ray diffraction, and optical transmission were carried out to investigate the changes of the properties with the storage period. Results show that the p-type characteristics of the N–Al codoped ZnO films are of acceptable reproducibility and stability. In addition, the N–Al codoped p-type ZnO films have good crystallinity and optical quality. The properties are time independent. [ABSTRACT FROM AUTHOR]
- Published
- 2006
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