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Transparent conductive oxide (TCO) p-type Li-doped NiO thin films were deposited on the (0001) sapphire substrates by magnetron sputtering technique with a high purity NiO:LiO ceramic target. We systematically investigated the structural, electrical and optical properties of NiO:Li thin films annealed in different conditions. We found that annealing in different conditions greatly affects the physical properties of NiO:Li thin films. Compared with the NiO:Li thin film annealed in oxygen, the hole concentration of NiO:Li thin film annealed in nitrogen at the same processing temperature is obviously lower. Annealed in oxygen at 500 °C, NiO:Li films show excellent crystal quality with single (111) orientation, high hole concentrations. When the annealing temperature increased, the transmittance of NiO:Li thin films become better for wavelength range from ultraviolet (UV) to visible with a significant absorption edge near 350 nm. [ABSTRACT FROM AUTHOR]

Near infrared light-emitting diode (LED) based on p-NiO/n-InN/n-GaN was realized by plasma-assisted molecular beam epitaxy (PAMBE) combined with radio frequency (rf) magnetron sputtering. The device exhibited diode-like rectifying current–voltage characteristics with a turn-on voltage of 1.0 V. Under forward bias, prominent near infrared (NIR) emissions were observed at peak around 1570 nm at room temperature. The NIR emission was ascribed to the band-edge emission of InN epilayer based on the photoluminescence spectrum and band diagram of the heterojunction. Moreover, the study of the LED in terms of the stability was also discussed. [ABSTRACT FROM AUTHOR]

The n-InN/p-NiO/GaN heterojunction was fabricated by using plasma-assisted molecular beam epitaxy (PAMBE) combined with radio frequency magnetron sputtering. The device exhibited typical rectification characteristic with a turn-on voltage of ~1.5 V. Under forward bias, a dominant near infrared emission (NIR) peaked around 1565 nm was detected at room temperature. The NIR emission was attributed to the band-edge emission of InN film according to the photoluminescence spectrum of InN layer. Furthermore, the mechanism of the current transport and light emission was tentatively discussed in terms of the band diagrams of the heterojunction. [ABSTRACT FROM AUTHOR]

The NiO films were prepared on GaN substrate by depositing an InN epilayer on GaN by plasma-assisted molecular beam epitaxy (PAMBE) and then growing NiO films on InN epilayer by radio frequency (rf) magnetron sputtering. We studied the effect of InN epilayers on structure, surface morphology, electrical and optical properties of NiO films using X-ray diffraction (XRD), scanning electron microscopy (SEM), Hall and optical absorption measurement. It was found that the NiO films grown with InN epilayer exhibited better crystalline qualities with more coalescent surface morphologies and an enhancement of the electrical properties. Moreover, the effect of vacuum annealing on the crystalline qualities of the NiO films was also investigated. [ABSTRACT FROM AUTHOR]