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Silicides have been widely used for CMOS devices in order to provide a stable Ohmic contact with a low contact resistivity. With the integration of Ge on Si the focus also shifted to germanides as a low resistivity contact material. In addition, ferromagnetic germanides may serve as spin injector materials for Ge-based spintronic devices. Usually, germanides have been fabricated by furnace or rapid thermal annealing in literature. In this contribution we investigate the formation process of Ni germanides using a combination of magnetron sputtering and flash lamp annealing (FLA). Three different types of Ge served as a substrate for the deposition of the transition metal: amorphous Ge made by magnetron-sputtering on a SiO2-Si substrate, polycrystalline Ge made by magnetron-sputtering followed by FLA, and monocrystalline Ge in the form of a (100) Ge wafer. After metal deposition samples are in-situ annealed by FLA without breaking the vacuum, which triggers the formation of germanides and prevents a possible, but unwanted oxidation. In order to investigate the crystallization behavior, the structures have been characterized by Raman spectroscopy, X-ray diffraction, ellipsometry, current-voltage and Hall effect measurements.

There is a broad palette of applications for thin Si and Ge films ranging from photovoltaics over various microelectronic devices to sensor applications. Both amorphous and polycrystalline thin films are of interest for thin film photovoltaics, and thin film poly-Si transistors are the heart piece for driving LCDs and OLEDs [1]. In addition, the ability to deposit SiO2 and Si layers in an alternating order and to process them allows to extend the device density without further downscaling [2]. Amorphous thin film deposition methods are the most cost-effective ones, the subsequent crystallization is the most critical process step with regard to microstructure, defect density, and electrical properties. Potentially, flash lamp annealing (FLA) is a very suitable method due to the short process time, the qualification for temperature-sensible substrates and the possibility to take advantage of non-equilibrium crystallization modes [3]. In this work thin amorphous Si and Ge films have been deposited on SiO2 by DC-magnetron sputtering and crystallized by in-situ FLA in a new FLA sputter tool recently installed by the Rovak GmbH at HZDR (Fig. 1). The in-situ-processing suppresses the influence of surface oxidation effects after deposition prior to FLA. In order to investigate the crystallization behaviour, the thin films have been characterized by Raman spectroscopy, X-ray diffraction, ellipsometry, current-voltage and Hall effect measurements. Based on these results and in combination with temperature simulations, a model for the crystallization of thin amorphous Si and Ge films is derived.

Der Vortrag stellt das Helmholtz Innovation Lab für Ultrakurzzeitausheilung vor. Im zweiten Teil werden experimentelle Ergebnisse bei der Kristallisation von dünnen amorphen Halbleiterschichten (Si, Ge, NiGe) mittels magnetron sputtering und Blitzlampenausheilung diskutiert.

The Helmholtz-Zentrum Dresden-Rossendorf (HZDR) operates since 1998 a bending magnet beamline with two end stations at the ESRF, Grenoble. In 2011 the complete beamline optics was renewed with new focusing mirrors and a double crystal monochromator equipped with3 pairs of differently oriented Si-crystals and two sets of multilayers. The Materials Research Station is focusing on in-situ measurements using different scattering techniques like XRR, GISAXS, HRXRD or GIXRD that can be combined with spectroscopy measurements. In the center of interest are the CVD growth of graphite materials, phase change materials under operation and hydrogen storage materials. Additionally the syntheses of various nano-structured materials by magnetron sputtering were explored. A similar sample environment is used to investigate in-operando the He and Ar-ion implantation processes on single crystalline Si and Al2O3. Ions were provided by an ion gun operated at 5 keV, an additional potential of up to 20keV on the sample was applied to accelerate the ions further. Using a Mythen detector, a series of reciprocal space maps were recorded with duration of less than 1 minute per map. The crystal truncation rod vanished within the first seconds of He-ion bombardment. In the following the Si (004) reflection broadens, forming a layer peak that give clearly a hint of increasing strain in the material. After 50 minutes a steadystate that correspond to a heavily damaged or amorphized Si layer is reached

The last few years have seen an increasing interest in in-situ investigations on thin filmor nano structured systems. The advantages of these methods are clear: The (x-ray)investigations are done at the time of the phase or structure formation. Misleading results of ex-situ investigation due to altering or decomposition of the sample were avoided, metastable intermediate states were observed and additionally these experiments are less time consuming.The presented experiments were carried out at Material Research Station of the instrument BM20 at ESRF that is operated by the Forschungszentrum Dresden- Rossendorf. Our experimental station focuses on in-situ studies using different X-Ray diffraction and scattering methods in the energy range of 6 to 30 keV. The experiments can be combined with XRF and electrical resistivity measurements on demand. Two different topics of synthesis and processing are given. First, results on the formation of isolated Ge nano particles with well defined size by disproportion of germanium oxides in a silicondioxid matrix at higher temperatures of corresponding multilayer system were presented. Such materials are potential candidates for solar cells, extending the working spectral range for energy conversion. The size and ordering of the Ge nano crystallite can be controlled by the layer thicknesses as well as growth and annealing temperatures. Different in-situ growth techniques like reactive DC magentron sputtering of Si and RF- sputtering of SiO2 are compared. Secondly, the phase behavior of different metal catalyst onto different buffer layers for the carbon nanotube and graphene synthesis will be shown and discussed. Hereby diffraction experiments under controlled and reactive atmosphere were performed. As shown by in-situ investigations process were characterized on-line and structural as well as functional properties are correlated directly with each other. This increases the comprehension of synthesis and processing of functional materials.

Due to the high uniaxial anisotropy L10-ordered FePt is currently the most favored candidate for future high density storage applications. With respect to a feasible fabrication technology, it is necessary (i) to produce such films on amorphous substrates, and (ii) to enable a low processing temperature (T

Magnetron sputtered film stacks of 5nm Ta/50(15)nm NiMn/20nm Fe19Ni81 /5nm Ta deposited at Si/SiO2 substrates were subsequently irradiated with He+ ions (30 keV, 1e15 - 3e16 cm-2). Using synchrotron X-ray diffraction and reflectivity, the transition from the paramagnetic NiMn phase to the chemically ordered, antiferromagnetic L10 phase during annealing was studied. The transformation to a dominating L10 ordered NiMn film takes place between 300-400°C irrespective of the irradiation. Ion irradiation at low fluences offers beneficial effects with respect to a reduction of the mosaicity for both, the NiMn and the permalloy film, and a smoothening of internal interfaces.