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Transparent oxide semiconducting thin films based on mixed Ti-V oxides were prepared using a modified reactive magnetron sputtering method. Based on structural investigations performed with the help of x-ray diffraction and transmission electron microscopy analysis, two distinct regions in the prepared thin film have been observed: a nanocrystalline TiO-VO-VO mixed composition, and a thin layer consisting of amorphous phase and nanocystalline TiO phase deposited directly at the substrate. Optical measurements show excellent transmission in the visible spectral range of 73%, on average. Resistivity of the thin film was found at the order of 10 Ω cm at room temperature. The preparation of mixed Ti-V oxides provides a combination of high transparency and semiconducting properties. [ABSTRACT FROM AUTHOR]

In this work, the photocatalytic properties of Ti-V oxides thin films with 19 and 23 at.% of vanadium addition have been outlined. The films were deposited by the high energy reactive magnetron sputtering method. X-ray photoelectron spectroscopy measurements were done in order to determine the chemical composition and binding energy of the elements on the samples surface. Additionally, based on wettability measurements, the water contact angles were evaluated and were equal to ca. 94° and 55° for thin films with 19 and 23 at.% of V, respectively. This testifies about hydrophilic and hydrophobic properties, respectively. Photoactivity of thin films was determined by percent decomposition of phenol for 5 hours during UV-vis radiation exposure. The highest photocatalytic activity of 6.2%/cm² was obtained for thin films with 19 at.% of V. It has been found that an increase in V amount in Ti-V oxides thin films to 23 at.% results in lowered to 3%/cm² photocatalytic activity. [ABSTRACT FROM AUTHOR]