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The current-driven switching in nanofabricated magnetic F1/N/F2 trilayers (nanopillars) is examined. A square switching diagram at 4.2 K and rounded at 295 K is observed in magnetic trilayer nanopillars.

Systematic measurements of resistance dependence on the angle between the magnetizations in magnetic multilayers at 4.2 K, with varied configurations and thickness of one of the layers are reported. It is shown that the data for trilayers with the smallest thickness of one of the ferromagnetic layers are inconsistent with the existing models.

Magnetoresistance (MR) and switching current at room temperatures are compared along with 4.2 K for Permalloy/N/Permalloy nanopillars undergoing current-induced magnetization switching (CIMS), with nonmagnetic metals N=Cu, Ag, and Au. Results suggest that Ag and Au represent potentially viable alternatives for CIMS studies and devices to the more widely used Cu.

Findings on how current-driven magnetization switching and magnetoresistance in nanofabricated magnetic multilayers are affected are presented. The findings are affected by varying the spin-scattering properties of the nonmagnetic spacer, the relative orientations of the magnetic layers, and the spin-dependent scattering properties of the interfaces and the bulk of the magnetic layers.

Magnetic properties of soft films are usually affected by extrinsic properties such as easy axis dispersion and domain structure, which are dependent on deposition conditions, microstructures, alloy compositions, and internal stresses. The best potential for application in high frequency magnetic devices, in particular, recording write heads, due to the high saturation magnetization and well-defined uniaxial anisotropy is shown.