Author: "Beysen, Sadeh" / Topic: magnetization - Searchworks@Jio Institute Digital Library Search Results

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Start Over Author "Beysen, Sadeh" Topic magnetization

Author: T. Oomori, Hiroshi Kobayashi, Takeharu Kuroiwa, Beysen Sadeh, and T. Takenaga
Subjects: Materials science, Condensed matter physics, Magnetic moment, Spin valve, Rotation, Temperature measurement, Electronic, Optical and Magnetic Materials, Magnetic field, Condensed Matter::Materials Science, Magnetization, Tunnel magnetoresistance, Condensed Matter::Superconductivity, Antiferromagnetism, Electrical and Electronic Engineering
Abstract: Direction detection of a magnetic field by spin-valve-type magnetic tunnel junction (MTJ) has been investigated at temperatures ranging from room to 150/spl deg/C, concentrating on the magnetic property of the pinned layer. Angular dependencies of resistance curves show that detection errors from cosine curve increase with rising temperatures in MTJ with the IrMn/CoFe pinned layer. Measurements of the magnetization curves of the pinned layer found that detection errors are caused by rotation of the pinned layer magnetization. Direction detection of a magnetic field by MTJ with a IrMn/CoFe/Ru/CoFe of synthetic antiferromagnetic (SyAF) pinned layer, in which magnetizations of two CoFe layers nearly cancel each other, was also investigated. We confirmed that the pinned layer of SyAF structure in MTJ effectively reduces the dependence of detection errors on temperature.
Published: 2005

Author: Sasaki, Isao, Nakatani, Ryoichi, Endo, Yasushi, Kawamura, Yoshio, Yamamoto, Masahiko, Takenaga, Takashi, Aya, Sunao, Kuroiwa, Takeharu, Beysen, Sadeh, and Kobayashi, Hiroshi
Subjects: FERROMAGNETISM, MAGNETISM, RANDOM access memory, MAGNETIZATION, FERROMAGNETIC materials
Abstract: The transition between onion states and vortex states in exchange-coupled Ni–Fe/Mn–Ir asymmetric ring dots has been investigated. A direction of domain wall motion, during the transition from the single-domain state to the vortex state via the onion state, depends on a sweep direction of an external field. This dependence fixes the directions of vortical magnetizations in the vortex states. The derivative of the amount of the domain wall motion with respect to the external field depends on the sweep direction of external field, and thus the hysteresis loop becomes asymmetric. [ABSTRACT FROM AUTHOR]
Published: 2006
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Author: Nakatani, Ryoichi, Yoshida, Tetsuo, Endo, Yasushi, Kawamura, Yoshio, Yamamoto, Masahiko, Takenaga, Takashi, Aya, Sunao, Kuroiwa, Takeharu, Beysen, Sadeh, and Kobayashi, Hiroshi
Subjects: MAGNETIC memory (Computers), CHIRALITY, MAGNETIZATION, SYMMETRY (Physics), RANDOM access memory, MAGNETIC fields
Abstract: Ni–Fe asymmetric ring dots with partially planed outer sides were investigated as candidates for high-density magnetic memory cells. The magnetic states, which were measured with magnetic force microscopy, show that in-plane magnetic fields can control the chirality, either clockwise or counterclockwise, of vortical magnetizations of the Ni–Fe asymmetric ring dots. This control facilitates applying ring dots to the magnetic random access memories. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]
Published: 2004
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Author: Takeharu Kuroiwa, Beysen Sadeh, Kazunao Sato, Hiroshi Kobayashi, and Takashi Takenaga
Subjects: Magnetic anisotropy, Tunnel magnetoresistance, Magnetization, Materials science, Magnetic domain, Condensed matter physics, Condensed Matter::Superconductivity, Spin valve, General Physics and Astronomy, Magnetic particle inspection, Layer (electronics), Magnetic field
Abstract: We have experimentally investigated a method of controlling the magnetization direction of a CoFe pinned layer in a spin-valve-type magnetic tunnel junction (MTJ) with an IrMn layer. Arbitrary control of the direction of the pinned layer magnetization was performed by a postannealing process in conditions above the blocking temperature of IrMn and in a magnetic field to saturate the magnetization of the pinned layer. The results show that it is possible to control and to uniformly rearrange the direction of the pinned layer magnetization in MTJs with a postannealing process in the magnetic random access memories manufacturing process.
Published: 2004

Author: Nakatani, Ryoichi, Yoshida, Tetsuo, Endo, Yasushi, Kawamura, Yoshio, Yamamoto, Masahiko, Takenaga, Takashi, Aya, Sunao, Kuroiwa, Takeharu, Beysen, Sadeh, and Kobayashi, Hiroshi
Subjects: *MAGNETIZATION, *MAGNETIC force microscopy, *MAGNETIC memory (Computers), *MAGNETIC devices, *MAGNETIC fields
Abstract: Abstract: Ni–Fe/Mn–Ir asymmetric ring dots with partially planed outer sides are investigated in order to confirm a method for obtaining pinned layers in magnetic memories with asymmetric ring shapes. Magnetic force microscopy revealed that the direction of vortical magnetization is pinned in Ni–Fe/Mn–Ir asymmetric ring dots despite the direction of the magnetic fields. This investigation shows that the Ni–Fe/Mn–Ir asymmetric ring dots can be applied to pinned layers in magnetic memories with asymmetric ring shapes. [Copyright &y& Elsevier]
Published: 2005
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