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We theoretically explore the effect of a δ -potential on spin-polarized dwell time for electron in a magnetic nanostructure, which can be achieved by depositing a vertically-magnetized ferromagnetic stripe on top of InAs/AlxIn 1 − x As. The dwell time is found to be still spin-polarized because the δ -potential does not eliminate the spin-field interaction in the magnetic nanostructure. Spin-polarized dwell time is also found to be controllable by changing weight or position of the δ -potential since the effective potential experienced by electron in the magnetic nanostructure depends on the δ -potential. Therefore, such a δ -doped, magnetic nanostructure can act as a structurally-manipulable temporal spin splitter for spintronic device applications. [ABSTRACT FROM AUTHOR]

We theoretically investigate dwell time for electrons in a magnetic nanostructure with a δ -doping, which is formed on InAs / Al x In 1 − x As heterostructure by depositing a ferromagnetic (FM) stripe. We find that dwell time depends strongly on electron-spins owing to Zeeman coupling and broken symmetry. We also demonstrate that spin-polarized dwell time can be manipulated by δ -doping. Thus, electron spins can be separated in time dimension and such a magnetic nanostructure can be employed as a structurally-controllable temporal spin splitter for spintronics device applications. [ABSTRACT FROM AUTHOR]

Spin-dependent Goos–Hänchen（GH）effect of the electron in a magnetic barrier nanostructure modulated by the spin-orbit coupling (SOC) is investigated. Two kinds of intrinsic SOCs (Rashba and Dresselhaus types) are taken into account, and spin-dependent lateral shifts are obtained by the transfer matrix method and the stationary phase approximation. The spin-dependent lateral shift is found to be related closely to the SOC. Both magnitude and sign of the spin-polarised lateral shift can be controlled by properly adjusting the strength of Rashba or Dresselhaus SOC. These interesting features can provide an alternative approach to manipulate spin-polarised electrons in the semiconductor, and such a nanostructure can serve as a controllable spatial spin splitter for spintronics applications. [ABSTRACT FROM AUTHOR]

A magnetoresistance (MR) device was proposed by depositing two nanosized ferromagnetic strips on top and bottom of the semiconductor heterostructure. For the sake of manipulating its performance, we introduce a tunable -potential into this device with the help of the atomic-layer doping technique such as molecular beam epitaxy (MBE) or metal-organic chemical-vapor deposition (MOCVD). We investigate theoretically the impact of the -doping on the magnetoresistance ratio (MMRR) of the MR device. Although the -doping is embedded in the device, a considerable MR effect still exists due to different transmissions for the electron across parallel (P) and antiparallel (AP) configurations. Moreover, its MMRR varies sensitively with the magnitude and/or position of the -doping. Such an MR device can be controlled by changing the -doping, resulting in an adjustable MR device for magnetoelectronics applications. [ABSTRACT FROM AUTHOR]