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The inspection of the hardened depth of surface-hardening steel is important in the maintenance of various mechanical parts, and for other purposes as well. There is a difference in the electromagnetic properties in the layers with and without hardening. Therefore, the evaluation of the hardened depth is possible by detecting the difference in the electromagnetic characteristics. In this paper, the electromagnetic method for measuring the depth of a hardened layer using an alternating magnetic field of low frequency is proposed. The flux density in the surface-hardening steel is estimated by a 3-D nonlinear finite-element method taking account of the hysteresis characteristics of the layers with and without hardening. In addition, the experimental verification is also carried out. [ABSTRACT FROM AUTHOR]

Several kinds of bending magnet systems are used in present neutral beam injectors. In these systems the fringe magnetic field due to finite dimensions of the bending magnet plays an important role in the ion beam deflection. The power deposition profile on the ion dump surface is strongly influenced by the exit angles of the reflected ions with respect to the magnet boundary. However, it is not easy to predict the exit angles of the ions because both focusing and defocusing forces act on these ions during their reflections, and hence it is difficult to predict whether the power density on the ion dump surface increases or decreases. In order to investigate the effect of the fringe magnetic field on beam reflection in a 180° bending magnet system, we calculate power deposition profiles on the ion dump surface by applying a Monte Carlo technique. The computational results show that the power deposition profile is very sensitive to change of the magnetic field strength. When the magnetic field strength increases by 5%, for example, the maximum power density shows an increase of 80%. We also compare the calculated power deposition profile with the experimentally measured profile. The measured profiles are in good agreement with the calculated ones without considering the beam expansion due to a space-charge effect of the reflecting ions. [ABSTRACT FROM AUTHOR]

Abstract. Scanning tunneling microscopy and scanning tunneling spectroscopy measurements have been performed on a single crystal of CeRu[sub 2] down to 2.2 K under a magnetic field up to 2.0 T. The sample surfaces for the measurements are prepared by cutting or cracking the single crystal at 4.2 K. The vortex lattice has been imaged by mapping the quasiparticle density of states at the Fermi energy on the surface. We have observed that the surface has been covered with microstructures a few nm in diameter. These microstructures are characteristic of the surface when the sample is cut or cracked at low temperature. [ABSTRACT FROM AUTHOR]

The Uramoto-gun with Tanaka magnetic field (URT)-ion plating (IP) method is a novel ion plating technique for thin film deposition. This method offers the advantage of low-ion damage, low deposition temperatures, large area deposition and high growth rates. Ga-doped ZnO thin films were grown using the URT-IP method, and the doping properties were evaluated. The opposing goals of low Ga composition and low resistivity are required for industrial applications of transparent conductive oxide (TCO). We have carried out a comparison between the carrier concentration and Ga atomic concentration in Ga-doped ZnO thin films and found the trade-off point for optimal TCO performance. The optimum growth conditions were obtained using a 3% Ga2O3 content ZnO target. [Copyright &y& Elsevier]

We constructed the planar magnetron sputtering apparatus using a c-axis oriented single-domain Sm123 bulk superconductor with 60 mm in diameter as a very powerful magnet in place of an ordinary Nd–Fe–B magnet. A high magnetic field of 4.2 T at the surface of the superconductor coupled with a high target voltage of maximum 6 kV enabled us to discharge even at pressure of 1 × 10−3 Pa. A target-to-substrate distance of 300 mm was successfully employed under low pressures of 10−2–10−3 Pa to make the deposition of almost contamination-free films feasible. The simulation software (JMAG) was used to optimize the magnetic circuit configurations. The simulations could reproduce well the distribution of the magnetic field above the target measured by a three-axial Hall sensor. The discharging characteristics of Cu, Ni and Fe targets in the pressure range over 10−1–10−3 Pa were studied under different target voltages. The deposition rates of 0.063 nm/s (or 38 A˚/min) and 0.013 nm/s (or 8 A˚/min) were achieved for Cu and Fe targets with 3 mm in thickness, respectively, under the Ar pressure of 6.6 × 10−2 Pa (or 4.9 × 10−4 Torr). [Copyright &y& Elsevier]