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The probability laws associated to domain wall depinning under fields and currents have been studied in NiFe and FePt nanowires. Three basic domain wall depinning processes, associated to different potential landscapes, are found to appear identically in those systems with very different anisotropies. We show that these processes constitute the building blocks of any complex depinning mechanism. A Markovian analysis is proposed, that provides a unified picture of the depinning mechanism and an insight into the pinning potential landscape. [ABSTRACT FROM AUTHOR]

We report on the exchange biasing of self-assembled ferromagnetic GeMn nanocolumns by GeMn-oxide caps. The x-ray absorption spectroscopy analysis of this surface oxide shows a multiplet fine structure that is typical of the Mn2+ valence state in MnO. A magnetization hysteresis shift |HE|∼100 Oe and a coercivity enhancement ΔHc∼70 Oe have been obtained upon cooling (300–5 K) in a magnetic field as low as 0.25 T. This exchange bias is attributed to the interface coupling between the ferromagnetic nanocolumns and the antiferromagnetic MnO-like caps. The effect enhancement is achieved by depositing a MnO layer on the GeMn nanocolumns. [ABSTRACT FROM AUTHOR]

In this letter, we show efficient electrical spin injection into a SiGe based p-i-n light emitting diode from the remanent state of a perpendicularly magnetized ferromagnetic contact. Electron spin injection is carried out through an alumina tunnel barrier from a Co/Pt thin film exhibiting a strong out-of-plane anisotropy. The electron spin polarization is then analyzed through the circular polarization of emitted light. All the light polarization measurements are performed without an external applied magnetic field, i.e., in remanent magnetic states. The light polarization as a function of the magnetic field closely traces the out-of-plane magnetization of the Co/Pt injector. We could achieve a circular polarization degree of the emitted light of 3% at 5 K. Moreover this light polarization remains almost constant at least up to 200 K. [ABSTRACT FROM AUTHOR]

The spin signal variations of Al/NiFe lateral spin-valves with AlOx interfaces are studied under different applied field orientations. For applied fields perpendicular to the sample plane, the spin signal is governed by the spin precession and by the angular dephasing of spins in the channel, i.e., the Hanle effect. We show that using narrow permalloy wires with large shape anisotropies, it is also possible to observe spin precession with in-plane magnetic fields. In this case, the precessing spin current possesses an out-of plane component, which means that by tuning properly the external field it is possible to control along the three dimensions the orientation of the spins arriving on the ferromagnetic detector. Finally, fits of our data allow for both in and out-of plane fields extracting the relevant characteristics of our lateral spin-valves. [ABSTRACT FROM AUTHOR]

We study domain wall injection in 100 nm wide NiFe nanowires, followed by domain wall propagation and pinning on 50 nm wide constrictions. The injection is performed using local and external magnetic fields. Using several nucleation pad geometries, we show that at these small dimensions the use of an external field only does not allow obtaining a reproducible injection/pinning process. However, the use of an additional local field, created by an Oersted line, allows to nucleate a reversed domain at zero external applied field. Then, an external field of 5 mT enables the domain wall to propagate far from the Oersted line, and the pinning occurs reproducibly. We also show that notwithstanding the reproducibility of the pinning process, the depinning field is found to be stochastic, following a bimodal distribution. Using micromagnetic simulation we link two different DW configurations, vortex and transverse, to the two typical depinning fields. [ABSTRACT FROM AUTHOR]

Relating magnetotransport properties to specific spin textures at surfaces or interfaces is an intense field of research nowadays. Here, we investigate the variation of the electrical resistance of Ge(111) grown epitaxially on semi-insulating Si(111) under the application of an external magnetic field. We find a magnetoresistance term that is linear in current density j and magnetic field B, hence, odd in j and B, corresponding to a unidirectional magnetoresistance. At 15 K, for I=10  μA (or j=0.33  A m-1) and B=1  T, it represents 0.5% of the zero field resistance, a much higher value compared to previous reports on unidirectional magnetoresistance (UMR). We ascribe the origin of this magnetoresistance to the interplay between the externally applied magnetic field and the pseudomagnetic field generated by the current applied in the spin-splitted subsurface states of Ge(111). This unidirectional magnetoresistance is independent of the current direction with respect to the Ge crystal axes. It progressively vanishes, either using a negative gate voltage due to carrier activation into the bulk (without spin-splitted bands), or by increasing the temperature due to the Rashba energy splitting of the subsurface states lower than ∼58kB. We believe that UMR could be used as a powerful probe of the spin-orbit interaction in a wide range of materials. [ABSTRACT FROM AUTHOR]