1. Crossover from weak localization to anti-weak localization in indium oxide systems with wide range of resistivity.
- Author
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Shinozaki, B., Hidaka, K., Ezaki, S., Makise, K., Asano, T., Tomai, S., Yano, K., and Nakamura, H.
- Subjects
WEAK localization (Quantum mechanics) ,INDIUM oxide ,ELECTRICAL resistivity ,MAGNETIC fields - Abstract
We investigated the magnetoconductivity Δσ(H)≡1/ρ(H)-1/ρ(0) in a wide range of magnetic fields for three-dimensional indium oxide films doped with zinc, tin, or gallium in the range of resistivity ρ(300K) between 4.1×10
-6 Ωm and 1.7×10-3 Ωm. The weak localization theory was fitted to data for Δσ(H) at various temperatures in the range 2.0 K≤T≤50 K by the use of suitable characteristics Dτi n (T) and Dτso , where D, τin , and τso are the electron diffusion constant, inelastic scattering time, and spin-orbit (s-o) scattering time, respectively. It was found that (i) for films with a large value of ρ, the sign of Δσ(H) changes from positive to negative with decreasing temperature as a precursor to an anti-weak localization effect; (ii) the ratio τso /τin decreases from ≈4000 to≈4.0 with increasing ρ; (iii) the strong ρ dependence of Dτso cannot be explained by the model with a constant atomic number Z in a formula τso ∝1/Z4 proposed by Abrikozov and Gorkov Zh. Eksp. Teor. Fiz. 42, 1088 (1962); [Sov. Phys. JETP 15, 752 (1962)]. As a reason for this ρ dependence, we suggest that the s-o scattering changes with increasing ρ from light oxygen atoms to heavy atoms, i.e., indium, zinc, and gallium, because of the decrease in the number of oxygen vacancies acting as s-o scattering centers. [ABSTRACT FROM AUTHOR]- Published
- 2013
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